HSP80P10

HSP80P10 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP80P10 uses advanced trench MOSFET technology to provide excellent RDS(ON) and gate charge for use in a wide variety of other applications. The HSP80P10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -100 V RDS(ON),typ 20 mΩ ID -80 A TO220 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Portable equipment and battery powered systems Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -80 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -57 A IDM Pulsed Drain Current2 -225 A EAS Single Pulse Avalanche Energy3 310 mJ PD@TC=25℃ Total Power Dissipation4 210 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-smei.cn Ver 2.0 Typ. Max. Unit --- 62 ℃/W --- 0.7 ℃/W 1 HSP80P10 P-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -100 --- --- V VGS=-10V , ID=-40A --- 20 28 VGS=-4.5V , ID=-40A --- 24 32 m Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.8 -3 V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -50 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VGS=0V , VDS=0V,F=1MHz --- 4.7 ---  gfs Forward Transconductance VDS=-10V , ID=-10A --- 32 --- S Qg Total Gate Charge --- 180 --- Qgs Gate-Source Charge --- 44 --- Qgd Gate-Drain Charge --- 29 --- Td(on) VDS=-50V , VGS=-10V , ID=-20A --- 16 --- Rise Time VDD=-50V , VGS=-10V , RG=4, --- 91 --- Turn-Off Delay Time ID=-20A --- 208 --- Fall Time --- 110 --- Ciss Input Capacitance --- 11660 --- Coss Output Capacitance --- 289 --- Crss Reverse Transfer Capacitance --- 99 --- Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time nC VDS=-50V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -80 A VSD Diode Forward Voltage2 VGS=0V , IS=-40A , TJ=25℃ --- --- -1.3 V trr Reverse Recovery Time IF=-40A , di/dt=-100A/µs , --- 31.2 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 45 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-80V,VGS=-10V,L=0.3mH 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-smei.cn Ver 2.0 2 HSP80P10 P-Ch 100V Fast Switching MOSFETs Typical Characteristics www.hs-smei.cn Ver 2.0 3 HSP80P10 P-Ch 100V Fast Switching MOSFETs Fig.12 Unclamped Inductive Waveform Fig.11 Switching Time Waveform www.hs-smei.cn Ver 2.0 4 HSP80P10 P-Ch 100V Fast Switching MOSFETs www.hs-smei.cn Ver 2.0 5