HSM4113

HSM4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4113 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSM4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -40 V RDS(ON),max 40 mΩ ID -7.5 A SOP8 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ ±20 V Continuous Drain Current, -VGS @ -10V1 -7.5 A Continuous Drain Current, -VGS @ -10V1 -5.7 A -15 A 36 mJ -27.2 A Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.1 Typ. 1 Max. Unit --- 85 ℃/W --- 40 ℃/W 1 HSM4113 P-Ch 40V Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-6A --- --- 40 VGS=-4.5V , ID=-3A --- --- 70 -1.0 --- -2.5 V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 ---  Qg Total Gate Charge (-4.5V) --- 9 --- --- 2.54 --- VDS=-20V , VGS=-4.5V , ID=-6A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.1 --- Td(on) Turn-On Delay Time --- 19.2 --- nC Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 12.8 --- Turn-Off Delay Time ID=-1A --- 48.6 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 1004 --- Coss Output Capacitance --- 108 --- Crss Reverse Transfer Capacitance --- 80 --- Min. Typ. Max. Unit --- --- -7.5 A --- --- -15 A --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.1 2 HSM4113 P-Ch 40V Fast Switching MOSFETs P-Channel Typical Characteristics 60 12 ID=-6A VGS=-10V 10 55 RDSON (mΩ) -ID Drain Current (A) VGS=-7V VGS=-5V 8 6 50 45 VGS=-4.5V 40 4 VGS=-3V 2 35 0 30 0 0.5 1 1.5 -VDS Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source Voltage 10 12 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-6A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics of Reverse 12 18 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 6 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Ver 2.1 3 HSM4113 P-Ch 40V Fast Switching MOSFETs 10000 100.00 Capacitance (pF) F=1.0MHz 10.00 Ciss -ID (A) 1000 100us 1.00 Coss 100 1ms 10ms 100ms DC 0.10 Crss Tc=25o C Single Pulse 10 0.01 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 0.1 Fig.7 Capacitance 1 -VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM T 0.02 0.01 0.01 0.00001 TON D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Waveform Ver 2.1 4 HSM4113 P-Ch 40V Fast Switching MOSFETs Ordering Information Part Number HSM4113 www.hs-semi.cn Package code SOP-8 Ver 2.1 Packaging 2500/Tape&Reel 5