HSBB6056

HSBB6056 N-Ch 60V Fast Switching MOSFETs Description ⚫ ⚫ ⚫ ⚫ ⚫ Product Summary Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100% EAS Guaranteed Green Device Available 60 V RDS(ON),typ 7 mΩ ID 30 A PRPAK3X3 Pin Configuration Application ⚫ ⚫ ⚫ VDS Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current1 30 A ID@TC=100℃ Continuous Drain Current1 27 A IDM Pulsed Drain Current2 100 A EAS Single Pulse Avalanche Energy3 26.5 mJ IAS Avalanche Current 23 A PD@TC=25℃ Total Power Dissipation4 27.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 55 ℃/W --- 4.5 ℃/W 1 HSBB6056 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=15A --- 7 8.5 VGS=4.5V , ID=15A --- 10.5 12.5 VGS=VDS , ID =250uA 1.2 --- 2.3 VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.3 ---  Qg Total Gate Charge (4.5V) --- 15 --- Qgs Gate-Source Charge --- 3.5 --- Qgd Gate-Drain Charge --- 4.2 --- BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS IGSS Gate Threshold Voltage Drain-Source Leakage Current Conditions VDS=30V , VGS=10V , ID=15A m V uA nC --- 7 --- Rise Time VDD=30V , VGS=10V , RG=3.3, --- 4.5 --- Turn-Off Delay Time ID=15A --- 26 --- Fall Time --- 5 --- Ciss Input Capacitance --- 1270 --- Coss Output Capacitance --- 478 --- Crss Reverse Transfer Capacitance --- 40 --- Min. Typ. Max. Unit --- --- 30 A --- --- 100 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=15A , dI/dt=100A/µs , --- 22 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 72 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=23A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBB6056 N-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Source Drain Forword Characteristicsdiode Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Fig.4 Gate-Charge Characteristics Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSBB6056 N-Ch 60V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4 HSBB6056 N-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSBB6056 www.hs-semi.cn Package code PRPAK3*3 Ver 2.0 Packaging 3000/Tape&Reel 5