HSL6107

HSL6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL6107 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSL6107 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS -60 V RDS(ON),max 180 mΩ ID -2.3 A SOT223 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -2.3 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -1.9 A IDM Pulsed Drain Current2 -12 A EAS Single Pulse Avalanche Energy3 11.7 mJ IAS Avalanche Current -15.3 A PD@TA=25℃ Total Power Dissipation4 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 85 ℃/W --- 48 ℃/W 1 HSL6107 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-2A --- 140 180 VGS=-4.5V , ID=-1.5A --- 200 260 -1.0 --- -2.5 V --- 4.08 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-2A --- 6.3 --- S Qg Total Gate Charge (-4.5V) --- 4.6 --- Qgs Gate-Source Charge --- 1.4 --- Qgd Gate-Drain Charge --- 1.62 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-2A --- 17.4 --- Rise Time VDS=-15V , VGS=-10V , RG=3.3, --- 5.4 --- Turn-Off Delay Time ID=-1A --- 37.2 --- Fall Time --- 2.4 --- Ciss Input Capacitance --- 531 --- Coss Output Capacitance --- 59 --- Crss Reverse Transfer Capacitance --- 38 --- Min. Typ. Max. Unit --- --- -2.3 A --- --- -12 A --- --- -1.2 V Tr Td(off) Tf Turn-On Delay Time nC VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-25V,VGS=-10V,L=0.1mH,IAS=-15.3A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSL6107 P-Ch 60V Fast Switching MOSFETs Typical Characteristics 210 9 ID=-2A 8 VGS=-10V -ID Drain Current (A) 7 190 RDSON (mΩ) VGS=-7V 6 VGS=-5V 5 170 VGS=-4.5V 4 3 150 2 VGS=-3V 1 0 130 0 0.5 1 1.5 2 2.5 3 -VDS , Drain-to-Source Voltage (V) 3.5 4 2 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Voltage 6 10 -VGS Gate to Source Voltage (V) IS Source Current(A) VDS=-20V 4 TJ=150℃ TJ=25℃ 2 0 0.0 0.4 0.8 ID=-2A 8 6 4 2 0 0 1.2 VSD , Source-to-Drain Voltage (V) 2.5 5 7.5 10 QG , Total Gate Charge (nC) Fig.3 Forward characteristics of reverse Fig.4 Gate-charge characteristics diode 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Ver 2.0 3 HSL6107 P-Ch 60V Fast Switching MOSFETs 10000 10.00 F=1.0MHz 100us Capacitance (pF) 1ms 1000 1.00 Ciss -ID (A) 10ms 100 Coss TA=25o C Single Pulse Crss 0.01 0.01 10 1 5 9 13 17 21 -VDS Drain to Source Voltage(V) 100ms 0.10 25 Fig.7 Capacitance DC 0.1 1 -VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSL6107 P-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSL6107 www.hs-semi.cn Package code SOT-223 Ver 2.0 Packaging 3000/Tape&Reel 5