HSH15810

HSH15810 N-Ch 100V Fast Switching MOSFETs General Description ⚫ ⚫ ⚫ ⚫ Product Summary 100% EAS Guaranteed Green Device Available Super Low RDS(ON) Advanced high cell density Trench technology 100 V RDS(ON),typ 3.7 mΩ ID 120 A TO263 Pin Configuration Applications ⚫ ⚫ ⚫ VDS MOTOR Driver. BMS. High frequency switching and synchronous rectification. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 120 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 100 A IDM Pulsed Drain Current2 480 A EAS Single Pulse Avalanche Energy3 196 mJ IAS Avalanche Current 28 A PD@TC=25℃ Total Power Dissipation4 227 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.5 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSH15810 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 3.7 4.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 3.0 4.0 V VDS=100V , VGS=0V , TJ=25℃ --- --- 1 VDS=100V , VGS=0V , TJ=125℃ --- --- 10 IDSS Drain-Source Leakage Current uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 50 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1 ---  --- 72 --- --- 28 --- --- 15 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time VDS=50V , VGS=10V , ID=20A --- 35 --- VDD=50V , VGS=10V , RG=3.0, --- 18 --- ID=20A --- 45 --- nC ns Td(off) Turn-Off Delay Time Tf Fall Time --- 55 --- Ciss Input Capacitance --- 4725 --- Coss Output Capacitance --- 609 --- Crss Reverse Transfer Capacitance --- 14 --- Min. Typ. Max. Unit VDS=50V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 120 A VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25℃ --- --- 1.3 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 70 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 170 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=28A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current. www.hs-semi.cn Ver 2.0 2 HSH15810 N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VTH vs TJ Fig.6 Normalized RDSON vs TJ www.hs-semi.cn Ver 2.0 3 HSH15810 N-Ch 100V Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.7 Capacitance Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4 HSH15810 N-Ch 100V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5