HSM4435

HSM4435 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM4435 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSM4435 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS -30 V RDS(ON),typ 18 mΩ ID -9.5 A SOP8 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -9.5 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -7.6 A IDM Pulsed Drain Current2 -50 A EAS Single Pulse Avalanche Energy3 72.2 mJ IAS Avalanche Current -38 A PD@TA=25℃ Total Power Dissipation4 3.1 W PD@TA=70℃ Total Power Dissipation4 2 1.5 W TSTG Storage Temperature Range -550.94 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit Thermal Resistance Junction-Ambient 1 --- 75 ℃/W Thermal Resistance Junction-Ambient 1(t≦10s) --- 40 ℃/W Thermal Resistance Junction-Case1 --- 24 ℃/W RθJA RθJC www.hs-semi.cn Ver 2.0 1 HSM4435 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-6A --- 18 20 VGS=-4.5V , ID=-4A --- 27 32 -1.0 --- -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 ---  Qg Total Gate Charge (-4.5V) --- 12.6 --- --- 4.8 --- VDS=-15V , VGS=-4.5V , ID=-6A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 4.8 --- Turn-On Delay Time --- 4.6 --- Td(on) nC Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 14.8 --- Turn-Off Delay Time ID=-6A --- 41 --- Fall Time --- 19.6 --- Ciss Input Capacitance --- 1345 --- Coss Output Capacitance --- 194 --- Crss Reverse Transfer Capacitance --- 158 --- Min. Typ. Max. Unit --- --- -9.5 A --- --- -50 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-6A , dI/dt=100A/µs , --- 16.3 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 5.9 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM4435 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 50 -ID Drain Current (A) 40 VGS=-10V 30 VGS=-7V VGS=-5V 20 VGS=-4.5V VGS=-3V 10 0 0 0.5 1 1.5 2 2.5 -VDS , Drain-to-Source Voltage (V) 3 Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage 12 -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSM4435 P-Ch 30V Fast Switching MOSFETs 100.00 10000 F=1.0MHz 100us 10.00 Capacitance (pF) Ciss 1ms -ID (A) 1000 10ms 1.00 Coss 100ms Crss 100 0.10 DC TA=25o C Single Pulse 0.01 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance 0.1 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSM4435 P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSM4435 www.hs-semi.cn Package code SOP-8 Ver 2.0 Packaging 4000/Tape&Reel 5