PDCSD36C

ESD Protection Diode PDCSD36C Description Features The PDCSD36C is a 36V bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The PDCSD36C complies with the IEC 61000-4-2 (ESD) standard with ±25 kV air and ±20 kV contact discharge. It is assembled into an ultra-small leadfree SOD-323 package. The small size and high ESD surge protection make PDCSD36C an ideal choice to protect cell phone, digital cameras,audio players and many other portable applications.  300W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage：nA level  Operating voltage：36V  Low clamping voltage  2-pin leadless package  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-5 (Lightning) 4A (8/20μs)  RoHS Compliant Mechanical Characteristics Applications  Package: SOD-323  Case Material: “Green” Molding Compound.  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below        Dimensions and Pin Configuration Marking Information Cellular Handsets and Accessories Personal Digital Assistants Notebooks and Handhelds Portable Instrumentation Peripherals Digital Cameras Audio Players 36 36=Device MarkingCode Circuit and Pin Schematic Ordering Information Part Number Marking Packaging Reel Size PDCSD36C 36 3000/Tape & Reel 7 inch www.pdwsemi.com 1 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSD36C Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 300 W Peak Pulse Current (8/20µs) Ipp 4 A ESD per IEC 61000−4−2 (Air) ±25 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±20 kV TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 36 V 38 Test Condition V IT = 1mA Reverse Leakage Current IR 0.2 μA VRWM = 36V Clamping Voltage VC 50 V IPP = 1A (8 x 20µs pulse) VC 75 V IPP = 4A (8 x 20µs pulse) CJ 40 pF VR = 0V, f = 1MHz Junction Capacitance www.pdwsemi.com 2 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSD36C Junction Capacitance_Cj (pF) Typical Performance Characteristics (TA=25℃ unless otherwise Specified) 0 1 2 3 4 Reverse Voltage_VR (V) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time 120 100 100 80 % of Rated Power % of Peak Pulse Current 90 70 60 50 40 30 20 80 60 40 20 10 0 0 20 40 Time_t(uS) 60 0 80 0 25 50 75 100 125 Ambient Temperature_Ta(℃) 150 Power Derating Curve 8 X 20μs Pulse Waveform Note：Data is taken with a 10x attenuator ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 www.pdwsemi.com 3 -4 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08 ESD Protection Diode PDCSD36C SOD-323 Package Outline Drawing A DIMENSIO MILLIMETERS INCHES MIN MAX MIN MAX 1.50 1.80 0.060 0.071 SYM B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 Suggested Land Pattern SYM www.pdwsemi.com 4 -4 DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 © 2022 PDW, Inc. Specifications are subject to change without notice. Revised: 2022/04/08