ESD5471S-2/TR

ESD5471S ESD5471S 1-Line, Bi-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD5471S is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) SOD-523 (Top View) and Lightning. The ESD5471S may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 6A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD5471S is available in SOD-523 package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±5V Max  Transient protection for each line according to Pin1 TA * Pin2 IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 6A (8/20μs) TA = Device code  Capacitance: CJ = 9pF typ.  Low leakage current  Low clamping voltage: VCL = 12V typ. @ IPP = 16A (TLP)  Solid-state silicon technology * Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. Marking (Top View) Order information Applications  = Month code ( A~Z) Device Package Shipping ESD5471S-2/TR SOD-523 3000/Tape&Reel 1 Revision 1.5, 2021/09/24 ESD5471S Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 72 W Peak pulse current (tp = 8/20μs) IPP 6 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge ±30 kV ±30 TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2021/09/24 ESD5471S Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit ±5 V 1 μA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA 5.1 V IHOLD = 50mA 5.1 V Reverse breakdown voltage Reverse holding voltage VHOLD Clamping voltage 1) VCL IPP = 16A, tp = 100ns 12 V Clamping voltage 2) VCL VESD = 8kV 12 V Clamping voltage 3) VCL Dynamic resistance 1) RDYN Junction capacitance CJ IPP = 1A, tp = 8/20μs 8 V IPP = 6A, tp = 8/20μs 12 V Ω 0.28 VR = 0V, f = 1MHz 9 12 pF VR = 5V, f = 1MHz 6 8 pF Notes: 1) TLP parameter: Z0 = 50Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.5, 2021/09/24 ESD5471S Typical characteristics (TA=25oC, unless otherwise noted) Time to half-value: T2= 20s Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8s 100 90 50 T2 10 10 0 0 tr = 0.7~1ns Time (s) T1 10 11 10 CJ - Junction capacitance (pF) Pulse waveform: tp = 8/20s VC - Clamping voltage (V) Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 Pin1 to Pin2 Pin2 to Pin1 9 8 7 6 t 60ns 30ns 20 T 0 1 2 3 4 5 6 f = 1MHz VAC = 50mV 9 8 7 6 5 -5 7 -4 -3 -2 -1 0 1 2 3 IPP - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 4 5 1000 Peak pulse power (W) 100 % of Rated power 100 10 1 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 4 Revision 1.5, 2021/09/24 ESD5471S Typical characteristics (TA=25oC, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 16 TLP current (A) 12 8 4 0 -4 -8 Z0 = 50 -12 tr = 2ns -16 tp = 100ns -20 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.5, 2021/09/24 ESD5471S PACKAGE OUTLINE DIMENSIONS SOD-523 A1 E b D E2 E1 A TOP VIEW SIDE VIEW 0.4 c 2 1.5 1 0.5 SIDE VIEW Symbol θ RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.51 - 0.77 A1 0.50 0.60 0.70 b 0.25 - 0.40 c 0.08 - 0.15 D 0.75 0.80 0.85 E 1.10 1.20 1.30 E1 1.50 1.60 1.70 E2 0.20 Ref. θ 7︒C Ref. Will Semiconductor Ltd. 6 Revision 1.5,2021/09/24 ESD5471S TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 7 Q4 Revision 1.5,2021/09/24