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PESD3V3L5UY

PESD3V3L5UY

  • 厂商:

    UMW(友台)

  • 封装:

    SOT363

  • 描述:

    ESD保护 VRWM=3.3V VBR(Min)=6V VC=25V IPP=6A Ppk=150W SOT363

  • 详情介绍
  • 数据手册
  • 价格&库存
PESD3V3L5UY 数据手册
PESD3V3L5UY Features: • Low Capacitance (3 pF Maximum Between I/O Lines) • ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model • Protection for the Following IEC Standards: IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000−4−4 (EFT) 40 A (5/50 ns) IEC 61000−4−5 (Lightning) 23 A (8/20 ms) • UL Flammability Rating of 94 V−0 • This is a Pb−Free Device I/O 1 6 I/O VN 2 5 VP I/O 3 4 I/O Typical Applications: • High Speed Communication Line Protection • USB 1.1 and 2.0 Power and Data Line Protection • Digital Video Interface (DVI) and HDMI • Monitors and Flat Panel Displays • MP3 MAXIMUM RATINGS(TJ = 25°C unless otherwise noted) S ymbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 1 50 W Peak Pulse Current (tp = 8/20μs) IP P 6 A ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) VESD 15 8 kV TJ -55 to +125 °C TSTG -55 to +150 °C R ating Op erating Temp erature Storage Temp erature www.umw-ic.com 1 友台半导体有限公司 PESD3V3L5UY o Electrical Characteristics (T=25 C) arameter Symbo Conditions Minimum Typical Maximum Units Reverse Stand-Off Voltage VRWM Pi n 5 to 2 3.3 V Reverse Breakdown Voltage V BR It = 1mA Pi n 5 to 2 Reverse Leakage Current IR VRWM = 5V, T=25°C Pi n 5 to 2 3 μA Clamp ing Voltage VC IPP = 1A, tp = 8/20μs A n y p i n to p i n 2 15 V Clamp ing Voltage VC IPP = 6A, tp = 8/20μs A n y p i n to p i n 2 25 V Junction Cap acitance Cj VR = 0V, f = 1MHz Any I/O p in to p in 2 3 pF VR = 0V, f = 1MHz Between I/O p ins 1.5 pF 6 V Note 1: I/O pins are pin 1, 3, 4, and 6 Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 % of Rated Power or PI P Peak Pulse Power - PPP (kW) 100 1 0.1 90 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 Pulse Duration - tp (μs) 100 0 1000 Pulse Waveform Percent of I PP 80 Clamping Voltage - VC (V) 90 e-t 50 40 125 150 25 Waveform Parameters: tr = 8µs td = 20µs 100 60 50 75 100 Ambient Temperature - TA (oC) Clamping Voltage vs. Peak Pulse Current 110 70 25 td = IPP/2 30 20 Waveform Parameters: tr = 8µs td = 20µs 20 Pin 1, 3, 4, or 6 to pin 2 15 Pin 5 to pin 2 10 10 0 0 5 10 15 20 25 5 30 0 Time (µs) www.umw-ic.com 2 1 2 3 4 Peak Pulse Current - IPP (A) 5 6 友台半导体有限公司 PESD3V3L5UY PACKAGE DIMENSIONS NOTES: SOT−363 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 A B C D G H J K N S 4 - B- S 1 2 3 D6PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Marking K3W Orderinginformat ion Order code UMW PESD3V3L5UY www.umw-ic.com Package Base qty Delivery mode SOT-363 3000 Tape and reel 3 友台半导体有限公司
PESD3V3L5UY
PDF文档中包含以下信息:

1. 物料型号:型号为EL817 2. 器件简介:EL817是一款光耦器件,用于隔离输入和输出电路,保护电路不受外部干扰。

3. 引脚分配:EL817有6个引脚,分别为1脚阳极,2脚阴极,3脚集电极,4脚发射极,5脚GND,6脚VCC。

4. 参数特性:工作温度范围为-20℃至+85℃,隔离电压可达5000Vrms。

5. 功能详解:EL817通过光电效应实现信号传输,具有高速响应和低功耗特点。

6. 应用信息:广泛应用于工业控制、仪器仪表、医疗设备等领域。

7. 封装信息:采用DIP6封装,尺寸为9.1mm x 3.6mm。
PESD3V3L5UY 价格&库存

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PESD3V3L5UY
  •  国内价格
  • 5+0.65797
  • 20+0.59667
  • 100+0.53537
  • 500+0.47406
  • 1000+0.44546
  • 2000+0.42502

库存:0

PESD3V3L5UY
    •  国内价格
    • 10+0.43103
    • 100+0.34820
    • 300+0.30672
    • 3000+0.27562
    • 6000+0.25078
    • 9000+0.23836

    库存:1089