UMW PESD5V0L5UY
Ultra Low Capacitance ESD Protection Array
DESCRIPTION
PESD5V0L5U
is an ultra-low capacitance
Transient Voltage Suppressor (TVS) designed to
protection for high-speed data interfaces. With
typical capacitance of 0.20pF (I/O to I/O) only,
PESD5V0L5U
is designed to
protect
parasitic-sensitive systems against over-voltage
and over-current transient events. It complies
with IEC 61000-4-2 (ESD), Level 4(±15KV air,
±8KV
contact
discharge),
IEC61000-4-4
(electrical fast transient-EFT) (40A, 5/50ns),very
fast charged device model (CDM) ESD and cable
discharge event (CDE), etc.
PESD5V0L5U uses small SOT-363 package.
Each
PESD5V0L5U device can protect four highspeed data lines one Vcc line. The combined
features of
ultra-low capacitance, small size and high ESD
robustness make PESD5V0L5U
ideal
for high-speed data ports and high-frequency
lines (e.g., HDMI & DVI) applications. The
low clamping voltage of the PESD5V0L5U
guarantees
a minimum stress on the protected IC.
MACHANICAL DATA
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FEATURES
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APPLICATIONS
Transient protection for high-speed data lines
IEC 61000-4-2(ESD) ±25KV(Air)
±20KV(Contact)
IEC 61000-4-4(EFT)40A(5/50ns)
Cable Discharge Event(CDE)
Package optimized for high-speed lines
Small package(2.1mm*2.3mm*1.0mm)
Protects four data lines and one Vcc line
Low capacitance: 0.20pF (I/O to I/O)
Low leakage current
Low clamping voltage
Each I/O pin can withstand over 1000 ESD strikes
for ±8KV contact discharge
www.umw-ic.com
SOT-363 package
Flammability Rating: UL 94V-0
Terminal: Matte tin plated.
Packaging: Tape and Reel
High temperature soldering guaranted:260℃/10s
Reel size: 7 inch
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Serial ATA
MDDI Ports
USB 2.0/3.0 Power and Data Line Protection
Display Ports
High Definition Multi-Media Interface (HDMI)
Digital Visual Interface (DVI)
友台半导体有限公司
UMW PESD5V0L5UY
Ultra Low Capacitance ESD Protection Array
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Units
PPP
Peak Pulse Power (8/20μs)
60
W
VESD
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
±25
±20
kV
TOPT
Operating Temperature
-55/+125
C
TSTG
Storage Temperature
-55/+150
C
ELECTRICAL CHARACTERISTICS (Tamb=25C)
Symbol
Parameter
Test Condition
VRWM
Reverse Working Voltage
Any I/O pin to GND
Reverse Breakdown
Voltage
IT = 1mA
Any I/O pin to GND
VRWM = 5V
IR
Reverse Leakage Current
Any I/O pin to GND
IPP = 1A, tp = 8/20μs
Any I/O pin to GND
IPP = 4A, tp = 8/20μs
VC
Clamping Voltage
Any I/O pin to GND
IPP = 8A, tp = 8/20μs
Vcc pin to GND
VR = 0V, f = 1MHz
Between I/O and I/O
VR = 0V, f = 1MHz
CESD
Parasitic Capacitance
Between I/O and GND
VR = 0V, f = 1MHz
Between Vcc and GND
Note: I/O Pins are pin 1,3,4,6. Pin 5 is Vcc. Pin 2 is GND.
VBR
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2
Min
Typ
Max
Units
5.0
V
9.0
V
1.0
μA
10
V
15
V
15
V
0.20
0.30
pF
0.45
0.50
pF
6.0
0.80
pF
友台半导体有限公司
UMW PESD5V0L5UY
Ultra Low Capacitance ESD Protection Array
ELECTRICAL CHARACTERISTICS CURVE
www.umw-ic.com
3
友台半导体有限公司
UMW PESD5V0L5UY
Ultra Low Capacitance ESD Protection Array
SOT-363 PACKAGE OUTLINE DIMENSIONS
Marking
K4W
Orderinginformat ion
Order code
UMW PESD5V0L5UY
www.umw-ic.com
Package
Base qty
SOT-363
3000
4
Delivery mode
Tape and reel
友台半导体有限公司
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