ESD0524P
Ultra Low Capacitance ESD Protection Array
DESCRIPTION
ESD0524P is an ultra-low capacitance
Transient Voltage Suppressor (TVS) designed to
protection for high-speed data interfaces. With
typical capacitance of 0.2pF (I/O to I/O) only,
ESD0524P
is
designed
to
protect
parasitic-sensitive systems against over-voltage
and over-current transient events. It complies with
IEC 61000-4-2 (ESD), Level 4(±15KV air, ±8KV
contact discharge), IEC61000-4-4 (electrical fast
transient-EFT) (40A, 5/50ns),very fast charged
device model (CDM) ESD and cable discharge
event(CDE), etc.
ESD0524P uses ultra-small DFN2510
FEATURES
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package. Each ESD0524P device can
protect four high-speed data lines. The
combined features of ultra-low capacitance,
ultra-small size and high ESD robustness
make ESD0524P ideal for high-speed data
ports and high-frequency lines (e.g., HDMI
&DVI) applications. The low clamping voltage of
the ESD0524P guarantees a minimum
stress on the protected IC.
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MACHANICAL DATA
APPLICATIONS
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Serial ATA
PCI Express
Desktops, Servers and Notebooks
MDDI Ports
USB 2.0/3.0 Power and Data Line Protection
Display Ports
High Definition Multi-Media Interface (HDMI)
Digital Visual Interface (DVI)
www.umw-ic.com
Transient protection for high-speed data lines
IEC 61000-4-2(ESD) ±25KV(Air)
±20KV(Contact)
IEC 61000-4-4(EFT)40A(5/50ns)
Cable Discharge Event(CDE)
Package optimized for high-speed lines
Ultra-small package(2.5mm*1.0mm*0.5mm)
Protects four data lines
Low capacitance: 0.2pF (I/O to I/O)
Low leakage current
Low clamping voltage
Each I/O pin can withstand over 1000 ESD
strikes for ±8KV contact discharge
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1
DFN2510 package
Flammability Rating: UL 94V-0
Terminal: Matte tin plated.
Packaging: Tape and Reel
High temperature soldering guaranted:260℃/10s
Reel size: 7 inch
友台半导体有限公司
ESD0524P
Ultra Low Capacitance ESD Protection Array
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Units
PPP
Peak Pulse Power (8/20μs)
60
W
VESD
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
±25
±20
kV
TOPT
Operating Temperature
-55/+125
C
TSTG
Storage Temperature
-55/+150
C
ELECTRICAL CHARACTERISTICS (Tamb=25C)
Symbol
Parameter
Test Condition
VRWM
Reverse Working Voltage
Any I/O pin to GND
IT = 1mA
Any I/O pin to GND
VRWM = 5V
IR
Reverse Leakage Current
Any I/O pin to GND
IPP = 1A, tp = 8/20μs
Clamping Voltage
VC
Any I/O pin to GND
IPP = 4A, tp = 8/20μs
VC
Clamping Voltage
Any I/O pin to GND
VR = 0V, f = 1MHz
Parasitic Capacitance
CESD
Between I/O and GND
VR = 0V, f = 1MHz
CESD
Parasitic Capacitance
Between I/O and I/O
Note: I/O pins are pin 1,2,4,5, GND pins are pin 3,8.
VBR
Reverse Breakdown
Voltage
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2
Min
Typ
Max
Units
5.0
V
9.0
V
1.0
μA
10
V
15
V
0.4
0.5
pF
0.2
0.3
pF
6.0
友台半导体有限公司
ESD0524P
Ultra Low Capacitance ESD Protection Array
ELECTRICAL CHARACTERISTICS CURVE
www.umw-ic.com
3
友台半导体有限公司
ESD0524P
Ultra Low Capacitance ESD Protection Array
DFN2510 PACKAGE OUTLINE DIMENSIONS
Symbol
Dimensions (mm)
Min.
Nom.
Max.
D
2.45
2.50
2.55
E
0.95
1.00
1.05
b1
0.35
0.40
0.45
b2
0.20REF
b
0.15
L
0.33
0.20
0.25
0.38
0.43
Nd
2.00BSC
e
0.50BSC
R
0.10
0.125
0.15
A
0.45
0.50
0.55
c
A1
0.15REF
0.00
-
0.05
Marking
Ordering information
Order code
UMW ESD0524P
www.umw-ic.com
Package
Base qty
Delivery mode
DFN2510
3000
Tape and reel
4
友台半导体有限公司
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