ESD9N5V-2/TR

ESD9N5V ESD9N5V 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD9N5V is a uni-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components that may be subjected to ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. It is particularly well-suited for cellular phones, DFN1006-2L portable device, digital cameras, power supplies and many other portable applications because of its small package and low weight. The ESD9N5V may be used to provide ESD protection up to Pin1 Pin2 ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 10 A (8/20μs) according to IEC61000-4-5. Circuit diagram The ESD9N5V is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. *H Features  Stand-off voltage: 5V Max.  Transient protection for each line according to * = Date code (A~Z) IEC61000-4-2 (ESD): ±30kV (contact discharge) H = Device code IEC61000-4-4 (EFT): 40A (5/50ns) Marking (Top View) IEC61000-4-5 (surge): 10A (8/20μs)  Capacitance: CJ = 60pF Typ.  Solid-state silicon technology Order information Device Applications  Cell phone handsets and accessories  Personal Digital Assistants (PDAs)  Notebooks, Desktops, and Servers  Portable Instrumentation  Digital Cameras Will Semiconductor Ltd. ESD9N5V-2/TR 1 Package Shipping DFN1006-2L 10000/Tape&Reel Revision 3.0, 2016/12/13 ESD9N5V Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 150 W Peak pulse current (tp = 8/20μs) IPP 10 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 3.0, 2016/12/13 ESD9N5V o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Condition Min. Typ. VRWM = 5V Reverse breakdown voltage VBR IT = 1mA 6.0 Forward voltage VF IF = 10mA 0.4 0.8 Max. Unit 5 V 1 μA 8.0 V 1.3 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 11 V Clamping voltage 2) VCL VESD = 8kV 11 V Clamping voltage 3) VC Dynamic resistance 1) Junction capacitance Ipp=1A tp=8/20μs 10 V Ipp=10A tp=8/20μs 15 V RDYN Ω 0.25 VR = 0V, f = 1MHz 60 80 pF VR =5V, f = 1MHz 30 40 pF CJ Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 3.0, 2016/12/13 ESD9N5V o 100 90 Front time: T1= 1.25 T = 8s 100 90 Current (%) Time to half-value: T2= 20s 50 T2 10 10 0 0 20 T tr = 0.7~1ns Time (ns) Contact discharge current waveform per IEC61000-4-2 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 8/20μs waveform per IEC61000-4-5 Pulse waveform: tp=8/20μs 11 t 60ns 30ns Time (s) T1 10 9 8 70 f = 1MHz VAC = 50mV 65 60 55 50 45 40 35 30 25 7 0 1 2 3 4 5 6 7 8 9 20 10 11 0 1 Ipp - Peak pulse current (A) 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 100 1000 % of Rated power Peak Pulse Power (W) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 100 80 60 40 20 10 0 1 10 100 Pulse Time(s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 3.0, 2016/12/13 ESD9N5V o Typical characteristics (TA=25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 Z0 = 50 TLP current (A) tr = 2ns 16 tp = 100ns 12 8 4 0 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 3.0, 2016/12/13 ESD9N5V Package outline dimensions DFN1006-2L b CATHODE MARKING (Ⅰ) L E (Ⅱ) (Ⅲ) D e Top View Bottom View (Ⅰ) A (Ⅱ) A3 A1 Side View Symbol Min. Typ. Max. A 0.340 - 0. 530 A1 0.000 - 0.050 A3 Recommend land pattern (Unit: mm) 0.55 0.125 REF. D 0.950 1.000 1.075 E 0.550 0.600 0.675 b 0.200 0.250 0.300 L 0.450 0.500 0.550 e 0.60 0.30 Dimensions In Millimeters 0.650 Typ. Notes: 0.85 This recommended land pattern is for reference purposes only. Please consult your manufacturing 1.40 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 6 Revision 3.0, 2016/12/13