ESD56201D04-2/TR

ESD56201DXX ESD56201DXX 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD56201DXX is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56201DXX is specifically designed to protect power lines. DFN1610-2L (Bottom View) The ESD56201DXX is available in DFN1610-2L package. Standard products are Pb-free and Halogen-free. Pin1 Features  Reverse stand-off voltage: 4.85V ~ 24V  Surge protection according to IEC61000-4-5 Circuit diagram see Table 4  Pin2 ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge)  Low clamping voltage  Solid-state silicon technology Pin1 Applications x* Pin2 X= Device code (H I J K L S N)  Power supply protection * = Month code  Power management Marking (Top View) Order information Table 1. Device Package Shipping Marking ESD56201D04-2/TR DFN1610-2L 3000/Tape&Reel H* ESD56201D05-2/TR DFN1610-2L 3000/Tape&Reel I* ESD56201D10-2/TR DFN1610-2L 3000/Tape&Reel J* ESD56201D12-2/TR DFN1610-2L 3000/Tape&Reel K* ESD56201D15-2/TR DFN1610-2L 3000/Tape&Reel L* ESD56201D18-2/TR DFN1610-2L 3000/Tape&Reel S* ESD56201D20-2/TR DFN1610-2L 3000/Tape&Reel N* Will Semiconductor Ltd. 1 Revision 1.5, 2018/02/08 ESD56201DXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp = 8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 1800 W ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2018/02/08 ESD56201DXX o Electrical characteristics (TA = 25 C, unless otherwise noted) Table 3. Reverse Stand-off Type number Voltage Breakdown voltage VBR(V) IBR = 1mA VRWM (V) Junction Reverse leakage current IRM(μA) at VRWM Forward voltage capacitance VF(V) IF = 20mA F = 1MHz, VR=0V (pF) Max. Min. Typ. Max. Type. Max. Min. Max. Typ. Max. ESD56201D04 4.85 5.2 5.7 6.2 - 5.0 0.45 1.25 1100 1300 ESD56201D05 5.0 6.6 7.1 7.6 - 2.0 0.45 1.25 1050 1250 ESD56201D10 10.0 10.7 11.3 12.3 - 0.1 0.45 1.25 545 650 ESD56201D12 12.0 12.7 13.7 14.6 - 0.1 0.45 1.25 425 510 ESD56201D15 15.0 16.0 17.5 19.0 - 0.1 0.45 1.25 325 350 ESD56201D18 18.0 19.2 21.1 23.0 - 0.1 0.45 1.25 270 300 ESD56201D20 20.0 21.4 23.2 25.0 - 0.1 0.45 1.25 250 275 Table 4. Type number Rated peak pulse current IPP （A） 1)2) Clamping voltage 1)2) VCL(V) at IPP（A） Max. Typ. Max. ESD56201D04 120 10.5 12.0 ESD56201D05 100 11.0 13.0 ESD56201D10 86 17.5 20.0 ESD56201D12 75 19.5 22.0 ESD56201D15 60 27.0 30.0 ESD56201D18 50 32.0 35.0 ESD56201D20 45 35.0 38.0 Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform) 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.5, 2018/02/08 ESD56201DXX o 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Electrical characteristics (TA = 25 C, unless otherwise noted) 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 10 ESD56201D18 30 Peak pulse power (kW) VC - Clamping voltage (V) Pulse waveform: tp = 8/20s ESD56201D20 ESD56201D15 25 ESD56201D12 20 ESD56201D10 15 ESD56201D05 10 5 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 35 tr = 0.7~1ns t 60ns 30ns 30 1 ESD56201D04 0 25 50 75 100 0.1 125 1 10 100 Pulse time (s) IPP - Peak pulse current (A) Clamping voltage vs. Peak pulse current 1000 Non-repetitive peak pulse power vs. Pulse time 2400 IR -Leakage current (nA) % of Rated power 100 80 60 40 ESD56201D04 1600 1200 800 ESD56201D05 400 20 0 2000 0 0 25 50 75 100 125 150 -20 0 20 40 60 80 o TA - Ambient temperature ( C) o TA - Ambient temperature ( C) Power derating vs. Ambient temperature Will Semiconductor Ltd. -40 Leakage current vs. Ambient temperature 4 Revision 1.5, 2018/02/08 ESD56201DXX PACKAGE OUTLINE DIMENSIONS DFN1610-2L L h b E D e BOTTOM VIEW A1 c A TOP VIEW h SIDE VIEW Dimensions in Millimeters Symbol Min. Typ. Max. A 0.45 0.50 0.55 A1 0.00 0.02 0.05 c 0.15 Ref. b 0.75 0.80 0.85 L 0.35 0.40 0.45 D 1.55 1.60 1.65 E 0.95 1.00 1.05 e 1.10 BSC h 0.20 Ref. Recommended PCB Layout (Unit: mm) 0.625 1.000 0.600 Notes: This recommended land pattern is for reference 1.225 purposes only. Please consult your manufacturing 1.850 group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 5 Revision 1.5, 2018/02/08 ESD56201DXX TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm 16mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 6 Q4 Revision 1.5, 2018/02/08