SS54-MS

www.msksemi.com SS52 THRU SS520 Semiconductor Compiance FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.093 grams 0.004 ounce, 0.111 grams SMA(H) SMA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. CHARACTERISTICS SS520 SYMBOL SS52 SS53 SS54 SS55 SS56 SS58 SS510 SS515 Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 UNIT 150 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current 0.375″（9.5mm) Lead Lengths I(AV) 5.0 A IFSM 100 A Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Maximum Forward Voltage at 5.0A DC Maximum DC Reverse Current at Rated DC Bolcking Voltage VF 0.85 0.95 V 1.0 20 50 CJ 500 350 pF RθJA 15 10 ℃/W IR Typical Junction Capacitance (Note1) mA TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Operating Temperature Range Storage Temperature Range 0.7 0.2 @TJ=25℃ @TJ=100℃ Typical Thermal Resistance (Note2) 0.55 NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2.Thermal resistance junction to ambient, www.msksemi.com SS52 THRU SS520 Semiconductor FIG. 1 – FORWARD CURRENT DERATING CURVE FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGECURRENT, (AMPERES） AVERAGE FORWARD CURRENT AMPERES 6.0 5.0 4.0 3.0 2.0 SS52- SS510 SS515- SS520 1.0 0 25 75 50 100 125 150 200 150 100 50 0 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD ) 1 175 2 5 LEAD TEMPERATURE (℃) 10 INSTANTANEOUS FORWARD CURRENT, (A) SS52-SS54 SS55-SS520 TJ = 25°C f = 1 MHz 10 100 SS52 -SS54 10 SS55-SS56 SS58-SS510 SS515 - S S520 1.0 TJ = 25°C 0.1 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE ,VOLTS FIG.2-TYPICAL REVER CHARACTERISTICS 20 INSTANTANEOUS REVERSECURRENT(mA) CAPACITANCE, (pF) 4000 1 50 FIG.4-TYPICAL FORWARD CHARACTERISTICS 100 100 0.1 20 NUMBER OF CYCLES AT 60Hz FIG.3 – TYPICAL JUNCTION CAPACITANCE 1000 Compiance 10 TJ=100 ℃ 1.0 TJ=75℃ 0.1 TJ= 25℃ 0.01 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) www.msksemi.com SS52 THRU SS520 Semiconductor PACKAGE MECHANICAL DATA A Dimensions B Ref. Min. Max. A 4.25 B Inches Min. Max. 4.65 0.167 0.183 2.50 2.90 0.098 0.114 C 1.35 1.65 0.053 0.065 D 0.76 1.52 0.030 0.060 E E 4.93 5.28 0.194 0.208 F 0.051 0.203 0.002 0.008 J K G 0.15 0.31 0.006 0.012 H 1.98 2.41 0.078 0.095 J 6.50 H F G L D Millimeters 2.30 K DO-214AC (SMA) L 0.256 1.70 0.090 0.067 REEL SPECIFICATION P/N SS52 THRU SS520 PKG QTY SMA 2000 Compiance SS52 THRU SS520 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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