ULN2803

ULN2803 series High-voltage High-current Darlington Transistor Arrays Features  Relay-Driver Applications   High-Voltage Outputs:50V output)  Output Clamp Diodes  500-mA-Rated Collector Current(single Inputs Compatible With Various Types of Logic General Description The ULN2803 is high-voltage high-current These devices are capable of driving a wide Darlington transistor arrays each containing range of loads including solenoids, relays, DC seven open collector common emitter pairs. motors, LED displays, filament lamps, thermal Each pair is rated at 500mA. Suppression print-heads and high-power buffers. diodes are included for inductive load driving, The ULN2803 is available in both a small the inputs and outputs are pinned in opposition outline 18-pin package (SOP18). to simplify board layout. Connection Diagram SI PR O IN Pin Assignments 1 Ver1.1 Shanghai Siproin Microelectronics Co. ULN2803 series High-voltage High-current Darlington Transistor Arrays Pin Descriptions Pin Name Function 1 1B Input pair1 2 2B Input pair2 3 3B Input pair3 4 4B Input pair4 5 5B Input pair5 6 6B Input pair6 7 7B Input pair7 8 8B Input pair8 9 E Common Emitter (ground) 10 COM Common Clamp Diodes 11 8C Output pair8 12 7C Output pair7 13 6C 14 5C 15 4C 16 3C 18 Output pair6 Output pair5 Output pair4 Output pair3 PR O 17 IN Pin Number 2C Output pair2 1C Output pair1 SI Functional Block Diagram Note: All resistor values shown are nominal. The collentor-emitter diode is a parasitic structure and should not be used to conduct current.If the collector(s) go below ground an external Schoottky diode should be added to clamp negative undershoots. 2 Ver1.1 Shanghai Siproin Microelectronics Co. ULN2803 series High-voltage High-current Darlington Transistor Arrays Absolute Maximum Ratings (1) At 25°C free-air temperature (unless otherwise noted) Symbol Parameter Min VCC Collector to emitter voltage VR Clamp diode reverse voltage(2) 50 V VI Input voltage(2) 30 V ICP Peak collector current 500 mA See typical characteristics Max Unit 50 V IOK Output clamp current 500 mA ITE Total emitter-terminal current –2.5 A TA Operating free-air temperature range 70 °C ULN2803 –20 θJA Thermal Resistance Junction-to-Ambient(3) 63 θJC Thermal Resistance Junction-to-Case(4) 12 TJ Operating virtual junction temperature 150 °C TSTG Storage temperature range 150 °C °C/W IN (1) –65 Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to PR O absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. (3) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability. (4) Maximum power dissipation is a function of TJ(max), θJC, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/θJC. Operating at the absolute maximum TJ of SI 150°C can affect reliability. Recommended Operating Conditions Symbol Parameter Min Max Unit VCC Collector to Emitter voltage - 50 V TA Operating Ambient Temperature 40 +105 ℃ 3 Ver1.1 Shanghai Siproin Microelectronics Co. ULN2803 series High-voltage High-current Darlington Transistor Arrays Electrical Characteristics(TA=+25℃, unless otherwise specified) Parameter V I(on) V CE(sat) I Test Figure V F I I(off) MIN Unit MAX -- -- 2.4 IC = 250 mA -- -- 2.7 IC = 300 mA -- -- 3 II = 250 μA, IC = 100 mA -- 0.9 1.1 II = 350 μA, IC = 200 mA -- 1 1.3 II = 500 μA, IC = 350 mA -- 1.2 1.6 Figure 1 VCE = 50 V, II = 0 -- -- 50 Figure 2 VCE = 50 V, TA = +105°C II = 0 -- -- 100 Clamp forward voltage Figure 8 IF = 350 mA -- 1.7 2 V Off-state input current Figure 3 VCE = 50 V, 50 65 -- μA -- 0.93 1.35 On-state input voltage Collector-emitter saturation voltage Figure 6 Figure 5 VCE = 2 V IC = 500 μA Input current Clamp reverse current Ci Input capacitance Figure 7 VI = 5 V -- -- -- VI = 12 V ----- ---- -100 15 25 VR = 50 V TA = 70°C PR O IR Figure 4 IN VI = 3.85 V II TYP IC = 200 mA Collector cutoff current CEX ULN2803 Test Conditions VI = 0, f = 1 MHz V V μA mA 50 μA pF Switching Characteristics (TA = +25°C, unless otherwise specified) Parameter Test MIN t t PHL V OH Propagation delay time, low- to high-level output Propagation delay time, high- to low-level output See Figure 9 SI PLH ULN2803 Conditions See Figure 9 High-level output voltage VS = 50 V, IO = 300 mA, after switching See Figure 9 VS–20 UNIT TYP MAX 0.25 1 μs 0.25 1 μs mV 4 Ver1.1 Shanghai Siproin Microelectronics Co. ULN2803 series High-voltage High-current Darlington Transistor Arrays SI PR O IN Parameter Measurement Information 5 Ver1.1 Shanghai Siproin Microelectronics Co. ULN2803 series High-voltage Notes: PR O IN High-current Darlington Transistor Arrays 8. The pulse generator has the following characteristics: Pulse Width=12.5Hz, output impedance 50Ω, tr≤5ns, tr≤10ns. 9. CL includes prove and jig capacitance. SI 10. VIH=3V 6 Ver1.1 Shanghai Siproin Microelectronics Co. ULN2803 series High-voltage High-current Darlington Transistor Arrays SI PR O IN SOP18 Outline Dimensions 7 Ver1.1 Shanghai Siproin Microelectronics Co.