S9014

S9014 BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to S9015  Excellent hFE Linearity  Surface Mount device SOT-23 MECHANICAL DATA      Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current Collector Power Dissipation IC 100 mA PC 200 mW Thermal Resistance From Junction To Ambient RθJA 625 °C/W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=100uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO 45 V IC=0.1mA，IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100uA，IC=0 Collector cut-off current ICBO 0.1 uA VCB=50V, IE=0 Collector cut-off current ICEO 1 uA VCE=35V, IB=0 Emitter cut-off current IEBO 0.1 uA VEB=3V, IC=0 DC current gain hFE1 200 VCE=1V, IC=50mA 1000 Collector-emitter saturation voltage VCE(sat) 0.3 V IC=100mA，IB=5mA Base-emitter saturation voltage VBE(sat) 1 V IC=100mA，IB=50mA Transition frequency fT 150 MHz VCE=5V, IC=10mA, f=30MHz CLASSIFICATION OF hFE Rank L H Range 200-450 450-1000 Marking ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD J6 E-mail:hkt@heketai.com 1/4 S9014 BIPOLAR TRANSISTOR (NPN) Typical Characteristics hFE Static Characteristic 1000 COMMON EMITTER Ta=25℃ 20uA 6 18uA 16uA 14uA 4 12uA 10uA 8uA 2 —— IC Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 8 6uA Ta=25℃ 100 4uA COMMON EMITTER VCE= 5V IB=2uA 0 0 2 6 4 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 0.1 8 1 (V) 10 COLLECTOR CURRENT IC VBEsat —— IC 100 (mA) IC 2 1 0.1 Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 VCE Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 1 10 COLLECTOR CURRENT IC COLLECTOR CURRENT IC (mA) 100 IC —— VBE fT 1000 1 COMMON EMITTER VCE= 5V 0.6 0.3 0.9 Cob/ Cib —— —— IC 100 (mA) IC 100 10 COMMON EMITTER VCE=5V Ta=25℃ 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) 100 10 COLLECTOR CURRENT Ta=25℃ 0.1 0.0 1 (mA) Ta=100℃ 10 0.1 0.1 100 TRANSITION FREQUENCY fT (MHz) 0.01 0.1 10 COLLECTOR CURRENT VCB/ VEB PC 250 —— IC 100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Ta=25 ℃ Cib 10 Cob 1 0.1 0.1 1 REVERSE VOLTAGE 10 VR (V) ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 20 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE E-mail:hkt@heketai.com 125 100 Ta 150 (℃ ) 2/4 S9014 BIPOLAR TRANSISTOR (NPN) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3/4 S9014 BIPOLAR TRANSISTOR (NPN) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4/4