MBRD1060

MBRD1060 Technical Data Data Sheet N0627, Rev. A MBRD1060 SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request            DPAK Circuit Diagram Applications       Disk drives Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery charging Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR Condition - Max. Units 60 V Average Rectified Forward Current IF (AV) 10 A Peak One Cycle Non-Repetitive Surge Current 50% duty cycle @Tc=105°C, rectangular wave form IFSM 8.3ms, Half Sine pulse, TJ = 25 C 120 A Electrical Characteristics: Characteristics Forward Voltage Drop* Reverse Current * Junction Capacitance Symbol VF1 VF2 IR1 IR2 CT Condition @ 10A, Pulse, TJ = 25 C @ 10A, Pulse, TJ = 125 C @VR = rated VR, TJ = 25 C @VR = rated VR , TJ = 125 C @VR = 5.0V, TC = 25 C fSIG = 1MHz Typ. Max. Units 0.74 0.63 0.02 8 0.8 0.7 1.0 30.0 V V mA mA 170 300 pF * Pulse width < 300 µs, duty cycle < 2%  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  MBRD1060 Technical Data Data Sheet N0627, Rev. A Thermal-Mechanical Specifications: Characteristics Symbol Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Approximate Weight Case Style Condition TJ Tstg Specification - RJC - wt - Units -55 to +150 -55 to +150 DPAK C C 3.5 C/W 0.39 g Ratings and Characteristics Curves 100 Rev erse Current-IR(mA) TJ=25℃ 100 TJ=125℃ 10 1 0.1 TJ=25℃ 0.01 0.001 10 5 10 15 20 25 30 35 40 0 10 20 30 40 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 50 Re ve rs e Voltage -VR(V) Re ve rs e Voltage -VR(V) Fig.1-Typical Junction Capacitance Instantaneous Forward Current-IF(A) Junction Capacitance-CT(PF) 1000 TJ=25℃ 1 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 1.05 1.15 1.25 1.35 1.45 Forward voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  60 MBRD1060 Technical Data Data Sheet N0627, Rev. A Mechanical Dimensions DPAK Dimensions in millimeters SYMBOL Ordering Information Device MBRD1060 MBRD1060TR Package DPAK (Pb-Free) DPAK (Pb-Free) Min. Typ. Max. A A1 b c D D2 E e L L2 L4 Θ 2.18 0.64 0.46 6.35 4.32 5.97 2.39 0.13 0.89 0.89 6.73 6.22 9.40 1.40 0° 6.10 2.29BSC 1.52 - 10.41 1.78 1.02 10° V 5.21 - - Marking Diagram Where XXXXX is YYWWL Shipping 2500pcs / reel MBRD1060 SSG YY WW L 2500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. = Part Name = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Carrier Tape & Reel Specification DPAK SYMBOL A B C d E F P0 P P1 W Millimeters Min. Max. 6.80 10.40 2.60 Φ1.45 1.65 7.40 3.90 7.90 1.90 15.90  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  7.00 10.60 2.80 Φ1.65 1.85 7.60 4.10 8.10 2.10 16.30 MBRD1060 Technical Data Data Sheet N0627, Rev. A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 