SM8S33CATR

SM8S20CA THRU SM8S36CA Technical Data Data Sheet N2149, Rev. - SM8S20CA THRU SM8S36CA TRANSIENT VOLTAGE SUPPRESSOR Features   DO-218AB Circuit Diagram      Junction passivation optimized design passivated anisotropic rectifier technology TJ = 175℃ capability suitable for high reliability and automotive requirement. Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability AEC-Q101 qualified. Mechanical Data     Case: DO-218AB Molding compound meets UL 94V-0 flammability rating Base P/NHE3-RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 Maximum Ratings and Thermal Characteristics@TA=25°C unless otherwise specified Parameter Symbol Peak pulse power dissipation on 10/1000 μs waveform Peak pulse power dissipation on 10/10000 μs waveform Power dissipation on infinite heat sink at TC = 25°C Typical thermal resistance, junction to case Operating Junction and Storage Temperature Range Value Unit 6600 W 5200 W PD 8.0 W RθJC 0.9 °C/W TJ,TSTG -55 to 175 °C PPPM  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SM8S20CA THRU SM8S36CA Technical Data Data Sheet N2149, Rev. - Electrical Characteristics@TA=25°C unless otherwise specified DEVICE TYPE REVERSE STAND-OFF VOLTAGE VRWM (V) BREAKDOWN VOLTAGE VBR (V) @IT TEST CURRENT IT CLAMPING VOLTAGE VC@IPP PEAK PULSE CURRENT AT 10/1000μs WAVEFORM IPP REVERSE LEAKAGE CURRENT IR MIN. MAX. MA V A μA@25°C μA@175°C SM8S20CA 20 22.2 24.5 5 32.4 204 5 150 SM8S22CA 22 24.4 26.9 5 35.5 186 5 150 SM8S24CA 24 26.7 29.5 5 38.9 170 5 150 SM8S26CA 26 28.9 31.9 5 42.1 157 5 150 SM8S28CA 28 31.1 34.4 5 45.4 145 5 150 SM8S30CA 30 33.3 36.8 5 48.4 136 5 150 SM8S33CA 33 36.7 40.6 5 53.3 124 5 150 SM8S36CA 36 40.0 44.2 5 58.1 114 5 150 Mechanical Dimensions DO-218AB(Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 9.5 10.5 0.374 0.413 B 8.3 8.7 0.327 0.342 C D E 13.3 13.7 0.524 0.539 15.0 16.0 0.592 0.628 8.5 9.1 0.335 0.358 F 9.5 10.1 0.374 0.398 G H J K L M N P 2.4 3.0 0.094 0.118 0.5 0.7 0.020 0.028 2.7 1.9 4.7 14.2 3.5 1.6 3.7 2.1 5.1 14.8 4.1 2.2 0.106 0.075 0.185 0.559 0.138 0.063 0.146 0.083 0.201 0.583 0.161 0.087  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SM8S20CA THRU SM8S36CA Technical Data Data Sheet N2149, Rev. - Ordering Information Device SM8S20CA THRU SM8S36CA Marking Diagram Package Shipping DO-218AB 750pcs / reel SM8S20CA XXXX For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Carrier Tape Specification DO-218AB  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  = Part Name = Date Code SM8S20CA THRU SM8S36CA Technical Data Data Sheet N2149, Rev. - Ratings and Characteristics Curves Input Peak Pulse Current(%) Power Dissipation(W) 8.0 6.0 4.0 2.0 0 0 50 100 150 Case Temperature (℃) 200 150 tr=10μs 100 0 0 4000 3000 2000 1000 175 FIG.3: Load Dump Power Characteristics (10ms Exponential Waveform) Transient Thermal Impedance(℃/W) Load Dump Power (W) 5000 75 100 125 150 Case Temperature (℃) td 10 20 t-Time (ms) 30 40 FIG.2: Pulse Waveform 6000 50 Half Value- Ipp 2 IPPM 50 FIG.1: Power Derating Curve 0 25 Peak Value IPPM Tj=25℃ Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50% of IPPM 100 RθJA 10 RθJC 1.0 0.1 0.01 0.01 0.1 1 t-Pulse Width (s) 10 100 FIG.4: Typical Transient Thermal Impedance  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N2149, Rev. - SM8S20CA THRU SM8S36CA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 