SM8T20A
THRU
SM8T43A
Technical Data
Data Sheet N2146, Rev. -
SM8T20A THRU SM8T43A TRANSIENT VOLTAGE SUPPRESSOR
Features
DO-218AB
Circuit Diagram
Junction passivation optimized design passivated
anisotropic rectifier technology
TJ = 175℃ capability suitable for high reliability and
automotive requirement.
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
AEC-Q101 qualified.
Mechanical Data
Case: DO-218AB
Molding compound meets UL 94V-0 flammability rating
Base P/NHE3-RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable
per J-STD-002 and JESD22-B102
Maximum Ratings and Thermal Characteristics@TA=25°C unless otherwise specified
Parameter
Symbol
Peak pulse power dissipation on 10/1000 μs waveform
Peak pulse power dissipation on 10/10000 μs waveform
PPPM
Value
Unit
8000
W
6000
W
Power dissipation on infinite heat sink at TC = 25°C
PD
8.5
W
Peak forward surge current 8.3 ms single half sine-wave
IFSM
750
A
Typical thermal resistance, junction to case
RθJC
0.9
°C/W
TJ,TSTG
-55 to 175
°C
Operating Junction and Storage
Temperature Range
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SM8T20A
THRU
SM8T43A
Technical Data
Data Sheet N2146, Rev. -
Electrical Characteristics@TA=25°C unless otherwise specified
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM (V)
BREAKDOWN
VOLTAGE
VBR (V)
@IT
TEST
CURRENT
IT
CLAMPING
VOLTAGE
VC@IPP
PEAK PULSE
CURRENT AT
10/1000μs
WAVEFORM
IPP
REVERSE LEAKAGE
CURRENT
IR
MIN.
MAX.
MA
V
A
μA@25°C
μA@175°C
SM8T20A
20
22.2
24.5
5
32.4
247
5
150
SM8T22A
22
24.4
26.9
5
35.5
225
5
150
SM8T24A
24
26.7
29.5
5
38.9
205
5
150
SM8T26A
26
28.9
31.9
5
42.1
190
5
150
SM8T28A
28
31.1
34.4
5
45.4
176
5
150
SM8T30A
30
33.3
36.8
5
48.4
165
5
150
SM8T32A
32
35.5
39.4
5
51.4
156
5
150
SM8T33A
33
36.7
40.6
5
53.3
150
5
150
SM8T36A
36
40.0
44.2
5
58.1
138
5
150
SM8T40A
40
44.4
49.1
5
64.5
124
5
150
SM8T43A
43
47.8
52.8
5
69.4
115
5
150
Mechanical Dimensions DO-218AB(Inches/Millimeters)
SYMBOL
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.5
10.5
0.374
0.413
B
8.3
8.7
0.327
0.342
C
D
E
13.3
13.7
0.524
0.539
15.0
16.0
0.592
0.628
8.5
9.1
0.335
0.358
F
9.5
10.1
0.374
0.398
G
H
J
K
L
M
N
P
2.4
3.0
0.094
0.118
0.5
0.7
0.020
0.028
2.7
1.9
4.7
14.2
3.5
1.6
3.7
2.1
5.1
14.8
4.1
2.2
0.106
0.075
0.185
0.559
0.138
0.063
0.146
0.083
0.201
0.583
0.161
0.087
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SM8T20A
THRU
SM8T43A
Technical Data
Data Sheet N2146, Rev. -
Ordering Information
Device
SM8T20A
THRU
SM8T43A
Marking Diagram
Package
Shipping
DO-218AB
750pcs / reel
SM8T20A
XXXX
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Carrier Tape Specification DO-218AB
China - Germany - Korea - Singapore - United States
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= Part Name
= Date Code
SM8T20A
THRU
SM8T43A
Technical Data
Data Sheet N2146, Rev. -
Ratings and Characteristics Curves
Input Peak Pulse Current(%)
Power Dissipation(W)
10.0
8.0
6.0
4.0
2.0
0
0
50
100
150
Case Temperature (℃)
200
4000
3000
2000
1000
50
75
100
125
150
Case Temperature (℃)
175
FIG.3: Load Dump Power Characteristics
(10ms Exponential Waveform)
Transient Thermal Impedance(℃/W)
tr=10μs
Peak Value
IPPM
100
Half Value- Ipp
2
IPPM
50
0
0
td
10
20
t-Time (ms)
1000
10
40
100
Pulse
Width(ms)-21IPP
Exponential Waveform
FIG.4: Reverse Power Capability
100
RθJA
10
RθJC
1.0
0.1
0.01
0.01
30
10000
5000
0
25
Tj=25℃
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50% of IPPM
Reverse Surge Power(W)
Load Dump Power (W)
6000
150
0.1
1
t-Pulse Width (s)
10
100
FIG.5: Typical Transient Thermal Impedance
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Technical Data
Data Sheet N2146, Rev. -
SM8T20A
THRU
SM8T43A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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