PESD3V3NW-SF
Extremely low capacitance bidirectional ESD protection
3 March 2021
Product data sheet
1. General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the
TrEOS protection family . The device is housed in a DSN0603-2 (SOD962-2) leadless ultra small
Surface-Mounted Device (SMD) package designed to protect one signal line from the damage
caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Surge robustness IPPM = 20 A according to IEC 61000-4-5
Extremely low diode capacitance Cd = 1.2 pF max.
Extremely low clamping to protect sensitive I/Os
Extremely low-inductance protection path to ground
ESD protection up to ± 30 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
•
•
•
•
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff
voltage
Cd
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min
Typ
Max
Unit
-
-
3.3
V
-
0.6
1.2
pF
PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
K1
K2
sym045
Transparent
top view
DSN0603-2 (SOD962-2)
6. Ordering information
Table 3. Ordering information
Type number
Package
PESD3V3NW-SF
Name
Description
Version
DSN0603-2
silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch;
0.6 mm x 0.3 mm x 0.3 mm body
SOD962-2
7. Marking
Table 4. Marking codes
Type number
Marking code
PESD3V3NW-SF
g
PESD3V3NW-SF
Product data sheet
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRWM
reverse standoff voltage
-
3.3
V
IPPM
rated peak pulse current
-
20
A
Tamb
Tstg
ambient temperature
-40
125
°C
storage temperature
-65
150
°C
tp = 8/20 µs
[1] [2]
ESD maximum ratings
VESD
[1]
[2]
[3]
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
[3]
-30
30
kV
IEC 61000-4-2; air discharge
[3]
-30
30
kV
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
In positive and negative direction.
Device stressed with ten non-repetitive ESD pulses.
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
PESD3V3NW-SF
Product data sheet
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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001aaa631
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
9. Characteristics
Table 6. Characteristics
tamb = 25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VBR
breakdown voltage
IR = 1 mA
-
6.8
-
V
IRM
reverse leakage current VRWM = 3.3 V; Tamb = 25 °C
-
1
50
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
0.6
1.2
pF
VCL
clamping voltage
IPPM = 20 A
[1]
-
5.1
-
V
Rdyn
dynamic resistance
IR = 10 A
[2]
-
0.1
-
Ω
IR = -10 A
[2]
-
0.1
-
Ω
[1]
[2]
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
aaa-028662
1
aaa-028663
1.2
S21
(dB)
a
-1
0.8
-3
0.4
-5
-7
108
Fig. 3.
109
1010
f (Hz)
0.0
1011
-4
-2
0
2
VRWM (V)
4
Insertion loss; typical values
Fig. 4.
PESD3V3NW-SF
Product data sheet
Relative capacitance as a function of reverse
standoff voltage; typical values
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
aaa-028673
80
aaa-028674
0
IPP
(A)
IPP
(A)
60
-20
40
-40
20
-60
0
0
20
40
60
VCL (V)
-80
-80
80
tr = 1 ns
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 5.
-40
-20
VCL (V)
0
tr = 1 ns
tp = 100 ns; Transmission Line Pulse (TLP)
Dynamic resistance with positive clamping;
typical values
Fig. 6.
Dynamic resistance with negative clamping;
typical values
aaa-028675
80
-60
aaa-028676
0
IPP
(A)
IPP
(A)
60
-20
40
-40
20
-60
0
0
20
40
60
VCL (V)
-80
-80
80
tr = 600 ps
tp = 5 ns; Very-Fast Transmission Line Pulse (VFTLP)
Fig. 7.
Dynamic resistance with positive clamping;
typical values
PESD3V3NW-SF
Product data sheet
-60
-40
-20
VCL (V)
0
tr = 600 ps
tp = 5 ns; Very-Fast Transmission Line Pulse (VFTLP)
Fig. 8.
Dynamic resistance with negative clamping;
typical values
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
aaa-028677
20
aaa-028678
0
IPP
(A)
IPP
(A)
15
-5
10
-10
5
-15
0
0
5
10
15
VCL (V)
-20
-20
20
IEC 61000-4-5; tp = 8/20 µs; positive pulse
Fig. 9.
-15
-10
-5
VCL (V)
0
IEC 61000-4-5; tp = 8/20 µs; negative pulse
Dynamic resistance with positive clamping;
typical values
Fig. 10. Dynamic resistance with negative clamping;
typical values
aaa-028679
50
I (A)
V (V)
30
(1)
10
(2)
-10
-50
0
50
100
150
t (ns)
200
tr = 1 ns
(1) TLP current
(2) TLP voltage
Fig. 11. TLP voltage and current over time, typical values
PESD3V3NW-SF
Product data sheet
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Extremely low capacitance bidirectional ESD protection
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses and ESD
damage. The device is suitable on lines where the signal polarities are both positive and negative
with respect to ground.
The device uses an advanced clamping structure showing a negative dynamic resistance.
This snap-back behavior strongly reduces the clamping voltage to the system behind the ESD
protection during an ESD event. Do not connect unlimited DC current sources to the data lines to
avoid keeping the ESD protection device in snap-back state after exceeding breakdown voltage
(due to an ESD pulse for instance).
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 12. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
6.
7.
8.
PESD3V3NW-SF
Product data sheet
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
Minimize the length of the transient return path to ground.
Avoid using shared transient return paths to a common ground point.
Use ground planes whenever possible. For multilayer PCBs, use ground vias.
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
11. Package outline
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm
SOD962-2
L
1
2
b
e1
A
A1
E
D
(1)
0
0.5 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
max 0.32
nom
min 0.28
mm
A1
0.03
b
D
E
e1
0.25 0.325 0.625
0.23 0.275 0.575
0.4
L
0.15
0.13
Note
1. The marking bar indicates the cathode.
Outline
version
sod962-2_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
13-07-12
13-07-17
SOD962-2
Fig. 13. Package outline DSN0603-2 (SOD962-2)
PESD3V3NW-SF
Product data sheet
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
12. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962-2
0.85
0.6
0.2
0.2
0.2
0.4
0.4 0.28
0.256
0.16
0.256
recommended stencil thickness: 0.1 mm
occupied area
solder paste
solder lands
Dimensions in mm
Issue date
16-02-01
20-09-15
sod962-2_fr
Fig. 14. Reflow soldering footprint for DSN0603-2 (SOD962-2)
PESD3V3NW-SF
Product data sheet
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
13. Revision history
Table 7. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD3V3NW-SF v.2
20210303
Product data sheet
-
PESD3V3NW-SF v.1
Modifications:
•
PESD3V3NW-SF v.1
20190805
-
-
PESD3V3NW-SF
Product data sheet
Figure "Reflow soldering footprint" updated
Product data sheet
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
14. Legal information
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Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
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PESD3V3NW-SF
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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PESD3V3NW-SF
Nexperia
Extremely low capacitance bidirectional ESD protection
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Characteristics.............................................................. 4
10. Application information............................................. 7
11. Package outline.......................................................... 8
12. Soldering..................................................................... 9
13. Revision history........................................................10
14. Legal information......................................................11
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Nexperia B.V. 2021. All rights reserved
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Date of release: 3 March 2021
PESD3V3NW-SF
Product data sheet
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