GB2X50MPS17-227

GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode TM Silicon Carbide Schottky Diode VRRM = IF (TC = 134°C) = QC = Features • • • • • • • • Package Low VF for High Temperature Operation Enhanced Surge and Avalanche Robustness Superior Figure of Merit QC/IF Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Positive Temperature Coefficient of VF Low VF for High Temperature Operation A A RoHS SOT-227 Advantages • • • • • • • • 1700 V 100 A * 1076 nC * K K REACH Applications Improved System Efficiency High System Reliability Optimal Price Performance Reduced Cooling Requirements Increased System Power Density Zero Reverse Recovery Current Easy to Parallel without Thermal Runaway Improved System Efficiency • • • • • • • • EV Fast Chargers Solar Inverters Wind Energy Converters Train Auxiliary Power Supplies High Frequency Rectifiers Switched Mode Power Supplies Motor Drives Pulsed Power Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Repetitive Peak Reverse Voltage (Per Leg) Continuous Forward Current (Per Leg / Per Device) Non-Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) Non-Repetitive Peak Forward Surge Current (Per Leg) i2t Value (Per Leg) Non-Repetitive Avalanche Energy (Per Leg) Diode Ruggedness (Per Leg) Power Dissipation (Per Leg / Per Device) Operating and Storage Temperature Symbol VRRM IF IF,SM IF,RM IF,MAX ∫i2dt EAS dV/dt PTOT T j , T stg Conditions TC = 75°C, D = 1 TC = 100°C, D = 1 TC = 134°C, D = 1 TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms T C = 25°C, t P = 10 µs TC = 25°C, tP = 10 ms L = 1.0 mH, IAS = 50 A VR = 0 ~ 1360 V TC = 25°C Values 1700 84 / 168 71 / 142 50 / 100 500 400 300 210 2500 1250 1301 200 387 / 774 -55 to 175 Unit V Note A Fig. 4 A A A A2s mJ V/ns W °C Fig. 3 * Per Device Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 1 of 7 GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode TM Electrical Characteristics (Per Leg) Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time tS Total Capacitance C Conditions Min. IF = 50 A, Tj = 25°C IF = 50 A, Tj = 175°C VR = 1700 V, Tj = 25°C VR = 1700 V, Tj = 175°C VR = 600 V VR = 1200 V IF ≤ IF,MAX dIF/dt = 200 A/µs VR = 600 V VR = 1200 V VR = 1 V, f = 1MHz VR = 1200 V, f = 1MHz Values Typ. 1.5 2.1 2 42 368 538 Max. 1.8 10 Unit Note V Fig. 1 µA Fig. 2 nC Fig. 7 < 10 ns 4701 259 pF Fig. 6 Unit Note °C/W Fig. 9 Thermal/Package Characteristics Parameter Symbol Thermal Resistance, Junction - Case (Per Leg) Weight Mounting Torque Terminal Connection Torque Isolation Voltage(RMS) Creepage Distance on Surface Striking Distance Through Air Rev 21/Mar Conditions RthJC WT TM TC VISO dCtt dCtb dStt dStb Min. Values Typ. Max. 0.39 28.0 Screws to Heatsink M4 Screws t = 1s (50/60 Hz) t = 60s (50/60 Hz) Terminal to Terminal Terminal to Backside Terminal to Terminal Terminal to Backside 1.5 1.3 3000 2500 10.5 8.5 3.2 6.8 Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf g Nm Nm V mm mm Page 2 of 7 GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode Figure 1: Typical Forward Characteristics (Per Leg) I F = f(VF,Tj); tP = 250 µs Figure 3: Power Derating Curves (Per Leg) PTOT = f(TC ); Tj = 175°C Rev 21/Mar TM Figure 2: Typical Reverse Characteristics (Per Leg) I R = f(VR,Tj) Figure 4: Current Derating Curves (Typical VF) (Per Leg) I F = f(TC ); D = tP/T; Tj ≤ 175°C; fSW > 10kHz Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 3 of 7 GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode Figure 5: Current Derating Curves (Maximum VF) (Per Leg) I F = f(TC ); D = tP/T; Tj ≤ 175°C; fSW > 10kHz Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics (Per Leg) QC = f(VR); f = 1MHz Rev 21/Mar TM Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics (Per Leg) C = f(VR); f = 1MHz Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics (Per Leg) EC = f(VR); f = 1MHz Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 4 of 7 GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode TM Figure 9: Transient Thermal Impedance (Per Leg) Zth,jc = f(tP,D); D = tP/T Figure 10: Forward Curve Model (Per Leg) Forward Curve Model Equation: I F = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m × Tj + n (V) m = -0.00128 (V/°C) n = 0.99 (V) Differential Resistance (RDIFF): 1/RDIFF RDIFF(Tj) = a × Tj2 + b × Tj + c (Ω) a = 2.03e-07 (Ω/°C2) b = 7.11e-05 (Ω/°C) c = 0.0093 (Ω) VBI Forward Power Loss Equation: PLOSS = VBI(Tj) × I AVG + RDIFF(Tj) × I RMS2 I F = f(VF,Tj) Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 5 of 7 GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode TM Package Dimensions SOT-227 Package Outline 0.472 (11.9) 0.480 (12.19) 0.372 (9.45) 0.378 (9.60) 1.240 (31.5) 1.255 (31.88) 0.310 (7.87) 0.322 (8.18) 0.108 (2.74) 0.124 (3.15) Ø 0.163 (4.14) 0.169 (4.29) R 3.97 0.163 (4.14) 0.169 (4.29) 0.990 (25.1) 1.000 (25.40) 0.495 (12.5) 0.506 (12.85) 0.172 (4.37) 0.186 (4.72) 0.191 (4.85) 0.234 (5.94) 0.080 (2.03) 0.084 (2.13) M4 0.165 (4.19) 0.169 (4.29) 1.049 (26.6) 1.059 (26.90) 0.030 (0.76) 0.033 (0.84) 0.588 (14.9) 0.594 (15.09) 1.186 (30.1) 1.192 (30.28) 1.494 (37.9) 1.504 (38.20) Package View A A K Isolated Base K NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 6 of 7 GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode TM Compliance RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links • SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227_SPICE.zip • PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227_PLECS.zip • CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227_3D.zip • Evaluation Boards: https://www.genesicsemi.com/technical-support • Reliability: https://www.genesicsemi.com/reliability • Compliance: https://www.genesicsemi.com/compliance • Quality Manual: https://www.genesicsemi.com/quality Revision History • Rev 21/Mar: Updated with most recent data • Supersedes: Rev 20/Apr, Rev 20/Aug www.genesicsemi.com/sic-schottky-mps/ Rev 21/Mar Copyright© 2021 GeneSiC Semiconductor Inc. All Rights Reserved. Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7