ESP32WROVERB &
ESP32WROVERIB
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Datasheet
Version 1.8
Espressif Systems
Copyright © 2022
www.espressif.com
About This Document
This document provides the specifications for the ESP32-WROVER-B and ESP32-WROVER-IB modules.
Document Updates
Please always refer to the latest version on https://www.espressif.com/en/support/download/documents.
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For revision history of this document, please refer to the last page.
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Contents
1
Overview
6
2
Pin Definitions
8
2.1
Pin Layout
8
2.2
Pin Description
8
2.3
Strapping Pins
10
3
Functional Description
12
3.1
CPU and Internal Memory
12
3.2
External Flash and SRAM
12
3.3
Crystal Oscillators
12
3.4
RTC and Low-Power Management
13
4
Peripherals and Sensors
14
5
Electrical Characteristics
15
5.1
Absolute Maximum Ratings
15
5.2
Recommended Operating Conditions
15
5.3
DC Characteristics (3.3 V, 25 °C)
15
5.4
Wi-Fi Radio
16
5.5
BLE Radio
17
5.5.1
Receiver
17
5.5.2
Transmitter
17
5.6
Reflow Profile
18
6
Schematics
19
7
Peripheral Schematics
21
8
Physical Dimensions
22
9
Recommended PCB Land Pattern
23
10 Dimensions of External Antenna Connector
24
11 Related Documentation and Resources
25
Revision History
26
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List of Tables
1
Ordering Information
6
2
ESP32-WROVER-B & ESP32-WROVER-IB Specifications
7
3
Pin Definitions
8
4
Strapping Pins
10
5
Absolute Maximum Ratings
15
6
Recommended Operating Conditions
15
7
DC Characteristics (3.3 V, 25 °C)
15
8
Wi-Fi Radio Characteristics
16
9
Receiver Characteristics – Bluetooth LE
17
10
Transmitter Characteristics – Bluetooth LE
17
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List of Figures
1
Pin Layout (Top View)
8
2
Reflow Profile
18
3
Schematics of ESP32-WROVER-B
19
4
Schematics of ESP32-WROVER-IB
20
5
Peripheral Schematics
21
6
Physical Dimensions
22
7
Recommended PCB Land Pattern
23
8
Dimensions of External Antenna Connector
24
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1 Overview
1 Overview
ESP32-WROVER-B and ESP32-WROVER-IB are two powerful, generic WiFi + Bluetooth + Bluetooth LE MCU
modules that target a wide variety of applications, ranging from low-power sensor networks to the most
demanding tasks, such as voice encoding, music streaming and MP3 decoding.
ESP32-WROVER-B comes with a PCB antenna, and ESP32-WROVER-IB with an external antenna connector.
They both feature a 4 MB external SPI flash and an additional 8 MB SPI Pseudo static RAM (PSRAM). The
information in this datasheet is applicable to both modules.
The ordering information of the two modules is listed as follows:
Table 1: Ordering Information
Module
ESP32-WROVER-B
ESP32-WROVER-IB
Chip embedded
Flash
PSRAM
Module dimensions (mm)
ESP32-D0WD
4 MB 1
8 MB
18 × 31.4 × 3.3
Notes:
1. The module with 8 MB flash or 16 MB flash is available for custom order.
2. For detailed ordering information, please see ESP Product Selector.
3. For dimensions of the IPEX connector, please see Chapter 10.
At the core of the module is the ESP32-D0WD chip*. The chip embedded is designed to be scalable and
adaptive. There are two CPU cores that can be individually controlled, and the CPU clock frequency is adjustable
from 80 MHz to 240 MHz. The chip also has a low-power coprocessor that can be used instead of the CPU to
save power while performing tasks that do not require much computing power, such as monitoring of
peripherals. ESP32 integrates a rich set of peripherals, ranging from capacitive touch sensors, Hall sensors, SD
card interface, Ethernet, high-speed SPI, UART, I2S and I2C.
Note:
* For details on the part numbers of the ESP32 family of chips, please refer to the document ESP32 Datasheet.
The integration of Bluetooth® , Bluetooth LE and Wi-Fi ensures that a wide range of applications can be targeted,
and that the module is all-around: using Wi-Fi allows a large physical range and direct connection to the Internet
through a Wi-Fi router, while using Bluetooth allows the user to conveniently connect to the phone or broadcast
low energy beacons for its detection. The sleep current of the ESP32 chip is less than 5 µA, making it suitable for
battery powered and wearable electronics applications. The module supports a data rate of up to 150 Mbps,
and 20 dBm output power at the antenna to ensure the widest physical range. As such the module does offer
industry-leading specifications and the best performance for electronic integration, range, power consumption,
and connectivity.
The operating system chosen for ESP32 is freeRTOS with LwIP; TLS 1.2 with hardware acceleration is built in as
well. Secure (encrypted) over the air (OTA) upgrade is also supported, so that users can upgrade their products
even after their release, at minimum cost and effort.
Table 2 provides the specifications of ESP32-WROVER-B and ESP32-WROVER-IB.
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1 Overview
Table 2: ESP32WROVERB & ESP32WROVERIB Specifications
Categories
Items
Specifications
See
RF certification
Certification
Test
certificates
for
ESP32-WROVER-B
and
ESP32-WROVER-IB
Bluetooth certification
BQB
Green certification
RoHS, REACH
Reliablity
HTOL/HTSL/uHAST/TCT/ESD
802.11 b/g/n (802.11n up to 150 Mbps)
Wi-Fi
Protocols
A-MPDU and A-MSDU aggregation and 0.4 µs guard interval support
Center frequency range of operating channel
Protocols
2412 ~ 2484 MHz
Bluetooth v4.2 BR/EDR and Bluetooth LE specification
NZIF receiver with –97 dBm sensitivity
Bluetooth
Radio
Class-1, class-2 and class-3 transmitter
AFH
Audio
CVSD and SBC
SD card, UART, SPI, SDIO, I2C, LED PWM, Motor
PWM, I2S, IR, pulse counter, GPIO, capacitive touch sen-
Module interfaces
sor, ADC, DAC, Two-Wire Automotive Interface (TWAI® ),
compatible with ISO11898-1 (CAN Specification 2.0)
Hardware
On-chip sensor
Hall sensor
Integrated crystal
40 MHz crystal
Integrated SPI flash
4 MB
Integrated PSRAM
8 MB
Operating voltage/Power supply
3.0 V ~ 3.6 V
Minimum current delivered by
power supply
Recommended operating ambient temperature range
500 mA
–40 °C ~ 85 °C
Package size
18 mm × 31.4 mm × 3.3 mm
Moisture sensitivity level (MSL)
Level 3
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2 Pin Definitions
2 Pin Definitions
2.1 Pin Layout
Keepout Zone
1
GND
GND
38
2
3V3
IO23
37
3
EN
IO22
36
4
SENSOR_VP
TXD0
35
5
SENSOR_VN
RXD0
34
6
IO34
IO21
33
7
IO35
NC
32
8
IO32
IO19
31
9
IO33
IO18
30
10
IO25
IO5
29
11
IO26
NC
28
12
IO27
NC
27
13
IO14
IO4
26
14
IO12
IO0
25
15
GND
IO2
24
16
IO13
IO15
23
17
SD2
SD1
22
18
SD3
SD0
21
19
CMD
CLK
20
Pin 39
GND
Figure 1: Pin Layout (Top View)
2.2 Pin Description
ESP32-WROVER-B and ESP32-WROVER-IB each has 38 pins. See pin definitions in Table 3.
Table 3: Pin Definitions
Name
No.
Type
Function
GND
1
P
Ground
3V3
2
P
Power supply
EN
3
I
Module-enable signal. Active high.
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2 Pin Definitions
Name
No.
Type
Function
SENSOR_VP
4
I
GPIO36, ADC1_CH0, RTC_GPIO0
SENSOR_VN
5
I
GPIO39, ADC1_CH3, RTC_GPIO3
IO34
6
I
GPIO34, ADC1_CH6, RTC_GPIO4
IO35
7
I
GPIO35, ADC1_CH7, RTC_GPIO5
IO32
8
I/O
IO33
9
I/O
IO25
10
I/O
GPIO25, DAC_1, ADC2_CH8, RTC_GPIO6, EMAC_RXD0
IO26
11
I/O
GPIO26, DAC_2, ADC2_CH9, RTC_GPIO7, EMAC_RXD1
IO27
12
I/O
GPIO27, ADC2_CH7, TOUCH7, RTC_GPIO17, EMAC_RX_DV
IO14
13
I/O
IO12
14
I/O
GND
15
P
IO13
16
I/O
SHD/SD2*
17
I/O
GPIO9, SD_DATA2, SPIHD, HS1_DATA2, U1RXD
SWP/SD3*
18
I/O
GPIO10, SD_DATA3, SPIWP, HS1_DATA3, U1TXD
SCS/CMD*
19
I/O
GPIO11, SD_CMD, SPICS0, HS1_CMD, U1RTS
SCK/CLK*
20
I/O
GPIO6, SD_CLK, SPICLK, HS1_CLK, U1CTS
SDO/SD0*
21
I/O
GPIO7, SD_DATA0, SPIQ, HS1_DATA0, U2RTS
SDI/SD1*
22
I/O
GPIO8, SD_DATA1, SPID, HS1_DATA1, U2CTS
IO15
23
I/O
IO2
24
I/O
IO0
25
I/O
IO4
26
I/O
NC1
27
-
-
NC2
28
-
-
IO5
29
I/O
GPIO5, VSPICS0, HS1_DATA6, EMAC_RX_CLK
IO18
30
I/O
GPIO18, VSPICLK, HS1_DATA7
IO19
31
I/O
GPIO19, VSPIQ, U0CTS, EMAC_TXD0
NC
32
-
-
IO21
33
I/O
GPIO21, VSPIHD, EMAC_TX_EN
RXD0
34
I/O
GPIO3, U0RXD, CLK_OUT2
TXD0
35
I/O
GPIO1, U0TXD, CLK_OUT3, EMAC_RXD2
IO22
36
I/O
GPIO22, VSPIWP, U0RTS, EMAC_TXD1
IO23
37
I/O
GPIO23, VSPID, HS1_STROBE
GPIO32, XTAL_32K_P (32.768 kHz crystal oscillator input), ADC1_CH4,
TOUCH9, RTC_GPIO9
GPIO33, XTAL_32K_N (32.768 kHz crystal oscillator output),
ADC1_CH5, TOUCH8, RTC_GPIO8
GPIO14, ADC2_CH6, TOUCH6, RTC_GPIO16, MTMS, HSPICLK,
HS2_CLK, SD_CLK, EMAC_TXD2
GPIO12, ADC2_CH5, TOUCH5, RTC_GPIO15, MTDI, HSPIQ,
HS2_DATA2, SD_DATA2, EMAC_TXD3
Ground
GPIO13, ADC2_CH4, TOUCH4, RTC_GPIO14, MTCK, HSPID,
HS2_DATA3, SD_DATA3, EMAC_RX_ER
GPIO15, ADC2_CH3, TOUCH3, MTDO, HSPICS0, RTC_GPIO13,
HS2_CMD, SD_CMD, EMAC_RXD3
GPIO2, ADC2_CH2, TOUCH2, RTC_GPIO12, HSPIWP, HS2_DATA0,
SD_DATA0
GPIO0, ADC2_CH1, TOUCH1, RTC_GPIO11, CLK_OUT1,
EMAC_TX_CLK
GPIO4, ADC2_CH0, TOUCH0, RTC_GPIO10, HSPIHD, HS2_DATA1,
SD_DATA1, EMAC_TX_ER
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2 Pin Definitions
Name
No.
Type
Function
GND
38
P
Ground
Notice:
* Pins SCK/CLK, SDO/SD0, SDI/SD1, SHD/SD2, SWP/SD3 and SCS/CMD, namely, GPIO6 to GPIO11 are connected
to the SPI flash integrated on the module and are not recommended for other uses.
2.3 Strapping Pins
ESP32 has five strapping pins, which can be seen in Chapter 6 Schematics:
• MTDI
• GPIO0
• GPIO2
• MTDO
• GPIO5
Software can read the values of these five bits from register ”GPIO_STRAPPING”.
During the chip’s system reset release (power-on-reset, RTC watchdog reset and brownout reset), the latches of
the strapping pins sample the voltage level as strapping bits of ”0” or ”1”, and hold these bits until the chip is
powered down or shut down. The strapping bits configure the device’s boot mode, the operating voltage of
VDD_SDIO and other initial system settings.
Each strapping pin is connected to its internal pull-up/pull-down during the chip reset. Consequently, if a
strapping pin is unconnected or the connected external circuit is high-impedance, the internal weak
pull-up/pull-down will determine the default input level of the strapping pins.
To change the strapping bit values, users can apply the external pull-down/pull-up resistances, or use the host
MCU’s GPIOs to control the voltage level of these pins when powering on ESP32.
After reset release, the strapping pins work as normal-function pins.
Refer to Table 4 for a detailed boot-mode configuration by strapping pins.
Table 4: Strapping Pins
Voltage of Internal LDO (VDD_SDIO)
Pin
MTDI
Default
3.3 V
1.8 V
Pull-down
0
1
Booting Mode
Pin
Default
SPI Boot
Download Boot
GPIO0
Pull-up
1
0
GPIO2
Pull-down
Don’t-care
0
Enabling/Disabling Debugging Log Print over U0TXD During Booting
Pin
Default
U0TXD Active
U0TXD Silent
MTDO
Pull-up
1
0
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2 Pin Definitions
Timing of SDIO Slave
FE Sampling
FE Sampling
RE Sampling
RE Sampling
Pin
Default
FE Output
RE Output
FE Output
RE Output
MTDO
Pull-up
0
0
1
1
GPIO5
Pull-up
0
1
0
1
Note:
• Firmware can configure register bits to change the settings of ”Voltage of Internal LDO (VDD_SDIO)” and ”Timing
of SDIO Slave” after booting.
• Internal pull-up resistor (R9) for MTDI is not populated in the module, as the flash and SRAM in ESP32-WROVER-B
and ESP32-WROVER-IB only support a power voltage of 3.3 V (output by VDD_SDIO).
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3 Functional Description
3 Functional Description
This chapter describes the modules and functions integrated in ESP32-WROVER-B and
ESP32-WROVER-IB.
3.1 CPU and Internal Memory
ESP32-D0WD contains two low-power Xtensa® 32-bit LX6 microprocessors. The internal memory
includes:
• 448 KB of ROM for booting and core functions.
• 520 KB of on-chip SRAM for data and instructions.
• 8 KB of SRAM in RTC, which is called RTC FAST Memory and can be used for data storage; it is accessed
by the main CPU during RTC Boot from the Deep-sleep mode.
• 8 KB of SRAM in RTC, which is called RTC SLOW Memory and can be accessed by the co-processor
during the Deep-sleep mode.
• 1 Kbit of eFuse: 256 bits are used for the system (MAC address and chip configuration) and the remaining
768 bits are reserved for customer applications, including flash-encryption and chip-ID.
3.2 External Flash and SRAM
ESP32 supports multiple external QSPI flash and SRAM chips. More details can be found in Chapter SPI in the
ESP32 Technical Reference Manual. ESP32 also supports hardware encryption/decryption based on AES to
protect developers’ programs and data in flash.
ESP32 can access the external QSPI flash and SRAM through high-speed caches.
• The external flash can be mapped into CPU instruction memory space and read-only memory space
simultaneously.
– When external flash is mapped into CPU instruction memory space, up to 11 MB + 248 KB can be
mapped at a time. Note that if more than 3 MB + 248 KB are mapped, cache performance will be
reduced due to speculative reads by the CPU.
– When external flash is mapped into read-only data memory space, up to 4 MB can be mapped at a
time. 8-bit, 16-bit and 32-bit reads are supported.
• External SRAM can be mapped into CPU data memory space. Up to 4 MB can be mapped at a time.
8-bit, 16-bit and 32-bit reads and writes are supported.
ESP32-WROVER-B and ESP32-WROVER-IB integrate a 4 MB SPI flash and an 8 MB PSRAM for more memory
space.
3.3 Crystal Oscillators
The module uses a 40-MHz crystal oscillator.
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3 Functional Description
3.4 RTC and LowPower Management
With the use of advanced power-management technologies, ESP32 can switch between different power
modes.
For details on ESP32’s power consumption in different power modes, please refer to section ”RTC and
Low-Power Management” in ESP32 Datasheet.
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4 Peripherals and Sensors
4 Peripherals and Sensors
Please refer to Section Peripherals and Sensors in ESP32 Datasheet.
Note:
External connections can be made to any GPIO except for GPIOs in the range 6-11, 16, or 17. GPIOs 6-11 are connected
to the module’s integrated SPI flash and PSRAM. GPIOs 16 and 17 are connected to the module’s integrated PSRAM.
For details, please see Section 6 Schematics.
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5 Electrical Characteristics
5 Electrical Characteristics
5.1 Absolute Maximum Ratings
Stresses beyond the absolute maximum ratings listed in the table below may cause permanent damage to the
device. These are stress ratings only, and do not refer to the functional operation of the device that should follow
the recommended operating conditions.
Table 5: Absolute Maximum Ratings
Symbol
Parameter
VDD33
Power supply voltage
Ioutput
1
Min
Max
–0.3
3.6
-
1,100
–40
105
Cumulative IO output current
Tstore
Storage temperature
Unit
V
mA
°C
1. The module worked properly after a 24-hour test in ambient temperature at 25 °C, and the IOs in three domains
(VDD3P3_RTC, VDD3P3_CPU, VDD_SDIO) output high logic level to ground. Please note that pins occupied by flash
and/or PSRAM in the VDD_SDIO power domain were excluded from the test.
2. Please see Appendix IO_MUX in ESP32 Datasheet for IO’s power domain.
5.2 Recommended Operating Conditions
Table 6: Recommended Operating Conditions
Symbol
Parameter
Min
Typical
Max
Unit
VDD33
Power supply voltage
3.0
3.3
3.6
V
IV DD
Current delivered by external power supply
0.5
-
-
A
T
Operating ambient temperature
–40
-
85
°C
5.3 DC Characteristics (3.3 V, 25 °C)
Table 7: DC Characteristics (3.3 V, 25 °C)
Symbol
CIN
VIH
Parameter
Min
Pin capacitance
Typ
-
High-level input voltage
0.75×VDD
2
1
-
Max
Unit
-
pF
1
VDD +0.3
V
1
VIL
Low-level input voltage
–0.3
-
0.25×VDD
IIH
High-level input current
-
-
50
nA
IIL
Low-level input current
-
-
50
nA
VOH
High-level output voltage
0.8×VDD1
-
-
V
VOL
Low-level output voltage
-
-
0.1×VDD1
V
VDD3P3_CPU power domain 1, 2
-
40
-
mA
1, 2
-
40
-
mA
-
20
-
mA
High-level source current
1
IOH
(VDD = 3.3 V, VOH >= 2.64 V,
output drive strength set to the
maximum)
VDD3P3_RTC power domain
VDD_SDIO power domain 1,
3
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V
5 Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Low-level sink current
(VDD1 = 3.3 V, VOL = 0.495 V,
IOL
-
28
-
mA
output drive strength set to the maximum)
RP U
Resistance of internal pull-up resistor
-
45
-
kΩ
RP D
Resistance of internal pull-down resistor
-
45
-
kΩ
VIL_nRST
Low-level input voltage of CHIP_PU to power off the chip
-
-
0.6
V
Notes:
1. Please see Appendix IO_MUX in ESP32 Datasheet for IO’s power domain. VDD is the I/O voltage for a particular power
domain of pins.
2. For VDD3P3_CPU and VDD3P3_RTC power domain, per-pin current sourced in the same domain is gradually reduced
from around 40 mA to around 29 mA, VOH >=2.64 V, as the number of current-source pins increases.
3. Pins occupied by flash and/or PSRAM in the VDD_SDIO power domain were excluded from the test.
5.4 WiFi Radio
Table 8: WiFi Radio Characteristics
Parameter
Condition
Center frequency range of operating channel
Typical
Max
Unit
-
2412
-
2484
MHz
-
-
*
-
12
13
14
dBm
17.5
18.5
20
dBm
11b, 1 Mbps
-
–98
-
dBm
11b, 11 Mbps
-
–89
-
dBm
11g, 6 Mbps
-
–92
-
dBm
11g, 54 Mbps
-
–74
-
dBm
11n, HT20, MCS0
-
–91
-
dBm
11n, HT20, MCS7
-
–71
-
dBm
11n, HT40, MCS0
-
–89
-
dBm
11n, HT40, MCS7
-
–69
-
dBm
11g, 6 Mbps
-
31
-
dB
11g, 54 Mbps
-
14
-
dB
11n, HT20, MCS0
-
31
-
dB
11n, HT20, MCS7
-
13
-
dB
note1
Output impedance note2
TX power
Min
note3
11n, MCS7
11b mode
Sensitivity
Adjacent channel rejection
Ω
1. Device should operate in the center frequency range of operating channel allocated by regional regulatory authorities.
Target center frequency range of operating channel is configurable by software.
2. For the modules that use external antennas, the output impedance is 50 Ω. For other modules without external
antennas, users do not need to concern about the output impedance.
3. Target TX power is configurable based on device or certification requirements.
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5 Electrical Characteristics
5.5 BLE Radio
5.5.1 Receiver
Table 9: Receiver Characteristics – Bluetooth LE
Parameter
Conditions
Min
Typ
Max
Sensitivity @30.8% PER
-
-
–97
-
dBm
Maximum received signal @30.8% PER
-
0
-
-
dBm
Co-channel C/I
-
-
+10
-
dB
F = F0 + 1 MHz
-
–5
-
dB
F = F0 – 1 MHz
-
–5
-
dB
F = F0 + 2 MHz
-
–25
-
dB
F = F0 – 2 MHz
-
–35
-
dB
F = F0 + 3 MHz
-
–25
-
dB
F = F0 – 3 MHz
-
–45
-
dB
30 MHz ~ 2000 MHz
–10
-
-
dBm
2000 MHz ~ 2400 MHz
–27
-
-
dBm
2500 MHz ~ 3000 MHz
–27
-
-
dBm
3000 MHz ~ 12.5 GHz
–10
-
-
dBm
-
–36
-
-
dBm
Unit
Adjacent channel selectivity C/I
Out-of-band blocking performance
Intermodulation
Unit
5.5.2 Transmitter
Table 10: Transmitter Characteristics – Bluetooth LE
Parameter
Conditions
Min
Typ
Max
RF transmit power
-
-
0
-
dBm
Gain control step
-
-
3
-
dBm
RF power control range
-
–12
-
+9
dBm
F = F0 ± 2 MHz
-
–52
-
dBm
F = F0 ± 3 MHz
-
–58
-
dBm
F = F0 ± > 3 MHz
-
–60
-
dBm
∆ f 1avg
-
-
-
265
kHz
∆ f 2max
-
247
-
-
kHz
∆ f 2avg /∆ f 1avg
-
-
–0.92
-
-
ICFT
-
-
–10
-
kHz
Drift rate
-
-
0.7
-
kHz/50 µs
Drift
-
-
2
-
kHz
Adjacent channel transmit power
Not Recommended For New Designs (NRND)
Espressif Systems
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5 Electrical Characteristics
Temperature (℃)
5.6 Reflow Profile
Peak Temp.
235 ~ 250 ℃
250
Preheating zone
150 ~ 200 ℃
60 ~ 120 s
217
200
Reflow zone
217 ℃ 60 ~ 90 s
Cooling zone
–1 ~ –5 ℃/s
Soldering time
> 30 s
Ramp-up zone
1 ~ 3 ℃/s
100
50
25
Time (sec.)
0
0
50
100
150
200
250
Ramp-up zone — Temp.: 25 ~ 150 ℃ Time: 60 ~ 90 s Ramp-up rate: 1 ~ 3 ℃/s
Preheating zone — Temp.: 150 ~ 200 ℃ Time: 60 ~ 120 s
Reflow zone — Temp.: >217 ℃
60 ~ 90 s; Peak Temp.: 235 ~ 250 ℃ Time: 30 ~ 70 s
Cooling zone — Peak Temp. ~ 180 ℃ Ramp-down rate: –1 ~ –5 ℃/s
Solder — Sn-Ag-Cu (SAC305) lead-free solder alloy
Figure 2: Reflow Profile
Note:
Solder the module in a single reflow.
Not Recommended For New Designs (NRND)
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5
4
3
6 Schematics
Espressif Systems
6 Schematics
GND
The values of C1 and C2 vary with
the selection of the crystal.
C1
C20
1uF
GND
3
1
100pF
VDD33
PCB ANTENNA
GND
0.1uF
C12
C11
C10
C21
NC
1uF
0.1uF
NC
3.3nF/6.3V(10%)
R3
499
GPIO21
U0TXD
U0RXD
GPIO22
D1
ESD
GND
CAP1
CAP2
VDDA
XTAL_P
XTAL_N
VDDA
GPIO21
U0TXD
U0RXD
GPIO22
49
NC
J39
C4
VDD33
0
L4
PCB ANT
C
TBD
C15
C14
C16
TBD
TBD
NC
C17
GND
GND
GND
The values of C15, L4 and C14
vary with the actual PCB board.
NC: No component.
R12
SENSOR_VN
CHIP_PU
GPIO34
GPIO35
GPIO32
GPIO33
GPIO25
VDDA
LNA_IN
VDD3P3
VDD3P3
SENSOR_VP
SENSOR_CAPP
SENSOR_CAPN
SENSOR_VN
CHIP_PU
VDET_1
VDET_2
32K_XP
32K_XN
GPIO25
FLASH_CLK
0
38
37
36
35
34
33
32
31
30
29
28
27
26
25
GPIO19
VDD3P3_CPU
GPIO23
GPIO18
GPIO5
SD_DATA_1
SD_DATA_0
SD_CLK
SD_CMD
SD_DATA_3
SD_DATA_2
GPIO17
VDD_SDIO
GPIO16
15
16
17
18
19
20
21
22
23
24
U2
ESP32-D0WD
GPIO23
GPIO18
GPIO5
SDI/SD1
SDO/SD0
SCK/CLK
SCS/CMD
SWP/SD3
SHD/SD2
GPIO17
GPIO16
R4
C24 VDD_SDIO
NC
1uF
GND
VDD33
10K(NC)
SRAM_CLK
0
R9
GPIO26
GPIO27
GPIO14
GPIO12
R13
C19
GPIO13
GPIO15
GPIO2
GPIO0
GPIO4
NC
GPIO17
GPIO19
VDD33
R11
0.1uF
GND
VDD_SDIO
FLASH_CLK
6
SHD/SD2
7
/CS
CLK
/HOLD
FLASH
VDD_SDIO
VDD_SDIO
8
VCC
1
GND
U3
SCS/CMD
Flash and PSRAM
DI
DO
/WP
5
SDI/SD1
2
SDO/SD0
3
SWP/SD3
R10
10K
U4
GPIO16
SDO/SD0
SWP/SD3
4
Not Recommended For New Designs (NRND)
ESP32-WROVER-B & ESP32-WROVER-IB Datasheet v1.8
SCK/CLK
NC
SENSOR_VP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GPIO26
GPIO27
MTMS
MTDI
VDD3P3_RTC
MTCK
MTDO
GPIO2
GPIO0
GPIO4
0.1uF
GND
ANT1
1 R15
2
VDD33
GND
GND
GND
3
2
C6
10nF/6.3V(10%)
CONN(NC)
19
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1 R14
GND
C5
20K(5%)
R2
C13
10uF
R1
48
47
46
45
44
43
42
41
40
39
L5
GND
GND
GND
2.0nH
0
40MHz(±10ppm)
VDD33
GND
TBD
GND
C9
GND
C2
2
XIN
TBD
C3
U1
GND XOUT
The value of R2 varies with the actual
PCB board.
VDD33
GND
4
GND
GND
D
B
2
1
2
3
4
CS#
VDD
SO/SIO1
SIO3
SIO2
SCLK
VSS
SI/SIO0
8
7
6
5
SHD/SD2
SRAM_CLK
SDI/SD1
GND
GND
Pin.1
GND
Pin.2
3V3
Pin.3
EN
Pin.4
SENSOR_VP
Pin.5
SENSOR_VN
Pin.6
IO34
Pin.7
IO35
Pin.8
IO32
Pin.9
IO33
Pin.10
IO25
Pin.11
IO26
Pin.12
IO27
Pin.13
IO14
Pin.14
IO12
Pin.15
GND
Pin.16
IO13
Pin.17
SD2
Pin.18
SD3
Pin.19
CMD
GND
GND
GPIO23
VDD33
CHIP_PU
GPIO22
SENSOR_VP
U0TXD
SENSOR_VN
U0RXD
GPIO34
GPIO21
GPIO35
GPIO32
Pin.39
EPAD
GPIO18
GPIO25
GPIO5
GND
GPIO26
GPIO27
GPIO14
GPIO4
GPIO12
GPIO0
GPIO2
GND
GPIO13
GPIO15
SHD/SD2
SDI/SD1
SWP/SD3
SDO/SD0
SCS/CMD
FLASH_CLK
PSRAM
GND
ESP32-WROVER-B(pin-out)
GND
Figure 3: Schematics of ESP32WROVERB
GPIO19
EP
GPIO33
Pin.38
GND
Pin.37
IO23
Pin.36
IO22
Pin.35
U0TXD
Pin.34
U0RXD
Pin.33
IO21
Pin.32
NC
Pin.31
IO19
Pin.30
IO18
Pin.29
IO5
Pin.28
NC
Pin.27
NC
Pin.26
IO4
Pin.25
IO0
Pin.24
IO2
Pin.23
IO15
Pin.22
SD1
Pin.21
SD0
Pin.20
CLK
5
4
1uF
1
100pF
GND XOUT
C20
VDD33
PCB ANTENNA
GND
0.1uF
C11
C10
C21
10uF
NC
1uF
0.1uF
NC
C6
10nF/6.3V(10%)
3.3nF/6.3V(10%)
R3
499
GPIO21
U0TXD
U0RXD
GPIO22
CONN
D1
ESD
GND
CAP1
CAP2
VDDA
XTAL_P
XTAL_N
VDDA
GPIO21
U0TXD
U0RXD
GPIO22
49
0
J39
C4
VDD33
GND
ANT1
0(NC)
C
L4
TBD
C15
C14
C16
TBD
TBD
NC
C17
GND
GND
GND
The values of C15, L4 and C14
vary with the actual PCB board.
NC: No component.
NC
SENSOR_VP
SENSOR_VN
CHIP_PU
GPIO34
GPIO35
GPIO32
GPIO33
GPIO25
VDDA
LNA_IN
VDD3P3
VDD3P3
SENSOR_VP
SENSOR_CAPP
SENSOR_CAPN
SENSOR_VN
CHIP_PU
VDET_1
VDET_2
32K_XP
32K_XN
GPIO25
20
SCK/CLK
R12
FLASH_CLK
0
38
37
36
35
34
33
32
31
30
29
28
27
26
25
GPIO19
VDD3P3_CPU
GPIO23
GPIO18
GPIO5
SD_DATA_1
SD_DATA_0
SD_CLK
SD_CMD
SD_DATA_3
SD_DATA_2
GPIO17
VDD_SDIO
GPIO16
15
16
17
18
19
20
21
22
23
24
U2
ESP32-D0WD
GPIO16
R4
C24 VDD_SDIO
NC
1uF
0
R9
GPIO26
GPIO27
GPIO14
GPIO12
R13
10K(NC)
C19
GPIO13
GPIO15
GPIO2
GPIO0
GPIO4
VDD33
SRAM_CLK
0.1uF
GND
VDD_SDIO
SHD/SD2
6
7
/CS
CLK
/HOLD
FLASH
VDD_SDIO
8
VCC
FLASH_CLK
1
GND
U3
SCS/CMD
Flash and PSRAM
VDD_SDIO
DI
DO
/WP
5
2
3
R10
SDI/SD1
10K
SDO/SD0
SWP/SD3
U4
GPIO16
SDO/SD0
SWP/SD3
4
Not Recommended For New Designs (NRND)
B
GPIO23
GPIO18
GPIO5
SDI/SD1
SDO/SD0
SCK/CLK
SCS/CMD
SWP/SD3
SHD/SD2
GPIO17
GND
NC
GPIO17
GPIO19
VDD33
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1 R15
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GPIO26
GPIO27
MTMS
MTDI
VDD3P3_RTC
MTCK
MTDO
GPIO2
GPIO0
GPIO4
0.1uF
PCB ANT
VDD33
GND
GND
GND
3
2
1 R14
GND
C5
20K(5%)
R2
C12
R1
48
47
46
45
44
43
42
41
40
39
L5
C13
GND
GND
GND
2.0nH
0
40MHz(±10ppm)
VDD33
GND
TBD
GND
C9
GND
C2
2
XIN
TBD
GND
U1
GND
C1
3
GND
4
GND
The value of R2 varies with the actual
PCB board.
C3
6 Schematics
Espressif Systems
D
2
GND
The values of C1 and C2 vary with
the selection of the crystal.
VDD33
3
1
2
3
4
CS#
VDD
SO/SIO1
SIO3
SIO2
SCLK
VSS
SI/SIO0
8
7
6
5
SHD/SD2
SRAM_CLK
SDI/SD1
GND
GND
Pin.1
GND
Pin.2
3V3
Pin.3
EN
Pin.4
SENSOR_VP
Pin.5
SENSOR_VN
Pin.6
IO34
Pin.7
IO35
Pin.8
IO32
Pin.9
IO33
Pin.10
IO25
Pin.11
IO26
Pin.12
IO27
Pin.13
IO14
Pin.14
IO12
Pin.15
GND
Pin.16
IO13
Pin.17
SD2
Pin.18
SD3
Pin.19
CMD
GND
GND
GPIO23
VDD33
CHIP_PU
GPIO22
SENSOR_VP
U0TXD
SENSOR_VN
U0RXD
GPIO34
GPIO21
GPIO35
GPIO32
Pin.39
EPAD
GPIO33
GPIO18
GPIO25
GPIO5
GND
GPIO26
GPIO27
GPIO14
GPIO4
GPIO12
GPIO0
GPIO2
GND
GPIO13
GPIO15
SHD/SD2
SDI/SD1
SWP/SD3
SDO/SD0
SCS/CMD
FLASH_CLK
PSRAM
GND
ESP32-WROVER-IB(pin-out)
GND
Figure 4: Schematics of ESP32WROVERIB
GPIO19
EP
Pin.38
GND
Pin.37
IO23
Pin.36
IO22
Pin.35
U0TXD
Pin.34
U0RXD
Pin.33
IO21
Pin.32
NC
Pin.31
IO19
Pin.30
IO18
Pin.29
IO5
Pin.28
NC
Pin.27
NC
Pin.26
IO4
Pin.25
IO0
Pin.24
IO2
Pin.23
IO15
Pin.22
SD1
Pin.21
SD0
Pin.20
CLK
7 Peripheral Schematics
7 Peripheral Schematics
U1
C2
R1
22uF
0.1uF
TBD
C3
TBD
GND
GND
EN
SENSOR_VP
SENSOR_VN
IO34
IO35
IO32
IO33
IO25
IO26
IO27
IO14
IO12
IO13
P_GND
GND3
IO23
IO22
TXD0
RXD0
IO21
NC3
IO19
IO18
IO5
NC2
NC1
IO4
IO0
IO2
IO15
SD1
SD0
CLK
GND1
3V3
EN
SENSOR_VP
SENSOR_VN
IO34
IO35
IO32
IO33
IO25
IO26
IO27
IO14
IO12
GND2
IO13
SD2
SD3
CMD
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
GND
JP1
1
2
3
4
IO19
IO18
IO5
1
2
3
4
UART
GND
IO4
IO0
IO2
IO15
ESP32-WROVER-B/ESP32-WROVER-IB
GND
JP2
Boot Option
GND
SW1
JP3
1
2
3
4
VDD33
IO23
IO22
TXD0
RXD0
IO21
1
2
C1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
1
2
VDD33
1
2
3
4
TMS
TDI
TCK
TDO
IO14
IO12
IO13
IO15
R2
C4
JTAG
0
EN
0.1uF
GND
IO12 should be kept low when the module is powered on.
Figure 5: Peripheral Schematics
Note:
• Soldering Pad 39 to the Ground of the base board is not necessary for a satisfactory thermal performance. If users
do want to solder it, they need to ensure that the correct quantity of soldering paste is applied.
• To ensure the power supply to the ESP32 chip during power-up, it is advised to add an RC delay circuit at the EN pin.
The recommended setting for the RC delay circuit is usually R = 10 kΩ and C = 1 µF. However, specific parameters
should be adjusted based on the power-up timing of the module and the power-up and reset sequence timing
of the chip. For ESP32’s power-up and reset sequence timing diagram, please refer to Section Power Scheme in
ESP32 Datasheet.
Not Recommended For New Designs (NRND)
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8 Physical Dimensions
8 Physical Dimensions
Unit: mm
18.00±0.15
3.30±0.15
3.60
3.72
23.05
24.09
31.40±0.15
6.22
3.60
10.45
1.27
15.84
0.57
1.10
10.50
16.16
0.45
0.85
0.1
6.22
0.90
0.80
2.12
Top View
Side View
Bottom View
Figure 6: Physical Dimensions
Note:
For information about tape, reel, and product marking, please refer to Espressif Module Package Information.
Not Recommended For New Designs (NRND)
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ESP32-WROVER-B & ESP32-WROVER-IB Datasheet v1.8
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9 Recommended PCB Land Pattern
9 Recommended PCB Land Pattern
Unit: mm
Via for thermal pad
Copper
6.22
18.00
Antenna Area
38x1.50
3.70
0.90
0.50
0.50
0.90
3.70
16.16
1.27
1.10
7.50
38
22.86
31.40
38x0.90
1
20
19
0.50
Figure 7: Recommended PCB Land Pattern
Not Recommended For New Designs (NRND)
Espressif Systems
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10 Dimensions of External Antenna Connector
10
Dimensions of External Antenna Connector
Unit: mm
Figure 8: Dimensions of External Antenna Connector
Not Recommended For New Designs (NRND)
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ESP32-WROVER-B & ESP32-WROVER-IB Datasheet v1.8
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11 Related Documentation and Resources
11
Related Documentation and Resources
Related Documentation
• ESP32 Technical Reference Manual – Detailed information on how to use the ESP32 memory and peripherals.
• ESP32 Hardware Design Guidelines – Guidelines on how to integrate the ESP32 into your hardware product.
• ESP32 ECO and Workarounds for Bugs – Correction of ESP32 design errors.
• Certificates
https://espressif.com/en/support/documents/certificates
• ESP32 Product/Process Change Notifications (PCN)
https://espressif.com/en/support/documents/pcns
• ESP32 Advisories – Information on security, bugs, compatibility, component reliability.
https://espressif.com/en/support/documents/advisories
• Documentation Updates and Update Notification Subscription
https://espressif.com/en/support/download/documents
Developer Zone
• ESP-IDF Programming Guide for ESP32 – Extensive documentation for the ESP-IDF development framework.
• ESP-IDF and other development frameworks on GitHub.
https://github.com/espressif
• ESP32 BBS Forum – Engineer-to-Engineer (E2E) Community for Espressif products where you can post questions,
share knowledge, explore ideas, and help solve problems with fellow engineers.
https://esp32.com/
• The ESP Journal – Best Practices, Articles, and Notes from Espressif folks.
https://blog.espressif.com/
• See the tabs SDKs and Demos, Apps, Tools, AT Firmware.
https://espressif.com/en/support/download/sdks-demos
Products
• ESP32 Series SoCs – Browse through all ESP32 SoCs.
https://espressif.com/en/products/socs?id=ESP32
• ESP32 Series Modules – Browse through all ESP32-based modules.
https://espressif.com/en/products/modules?id=ESP32
• ESP32 Series DevKits – Browse through all ESP32-based devkits.
https://espressif.com/en/products/devkits?id=ESP32
• ESP Product Selector – Find an Espressif hardware product suitable for your needs by comparing or applying filters.
https://products.espressif.com/#/product-selector?language=en
Contact Us
• See the tabs Sales Questions, Technical Enquiries, Circuit Schematic & PCB Design Review, Get Samples
(Online stores), Become Our Supplier, Comments & Suggestions.
https://espressif.com/en/contact-us/sales-questions
Not Recommended For New Designs (NRND)
Espressif Systems
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ESP32-WROVER-B & ESP32-WROVER-IB Datasheet v1.8
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Revision History
Revision History
Date
Version
Release notes
Updated Table 1
Added a link to RF certificates in Table 2
2022-03-04
v1.8
Updated Table 5
Added a note below Figure 6
Updated the description to the connector
Added Section 11: Related Documentation and Resources
Added ESP32-WROVER-IB module
Added Figure 4: Schematics of ESP32-WROVER-IB
Updated Figure 1: Pin Layout (Top View) , Figure 3: Schematics of ESP32-WROVER-B,
2021-08-10
v1.7
and Figure 5: Peripheral Schematics
Replaced Espressif Product Ordering Information with ESP Product Selector
Updated the description of TWAI in Table 2: Overview
Added a label of (Not Recommended For New Designs) to this document
Updated Figure 6: Physical Dimensions and Figure 7: Recommended PCB Land Pattern
Deleted Reset Circuit and Discharge Circuit for VDD33 Rail in Section 7: Peripheral
2021-02-09
V1.6
Schematics
Modified the note below Figure 2: Reflow Profile.
Updated the trade mark from TWAI™ to TWAI® .
2020-11-27
V1.5
Added TWAITM in Table 2;
Updated the C value in RC circuit from 0.1 µF to 1 µF.
• Changed the module’s operating temperature range from –40°C ~ 65°C to –40°C
2020-03-13
V1.4
~ 85°C
• Added documentation feedback link
• Changed the supply voltage range from 2.7 V ~ 3.6 V to 3.0 V ~ 3.6 V;
• Added Moisture sensitivity level (MSL) 3 in Table 2 ESP32-WROVER-B Specifications;
2019.09
V1.3
• Added notes about ”Operating frequency range” and ”TX power” under Table 8
Wi-Fi Radio Characteristics;
• Updated Section 7 Peripheral Schematics and added a note about RC delay circuit
under it;
• Updated Figure 9 Recommended PCB Land Pattern.
2019.01
V1.2
Changed the RF power control range in Table 10 from –12 ~ +12 to –12 ~ +9 dBm.
Added notes on module custom options to Table 1;
2018.10
V1.1
Added ”Cumulative IO output current” entry to Table 5: Absolute Maximum Ratings;
Added more parameters to Table 7: DC Characteristics.
Not Recommended For New Designs (NRND)
Espressif Systems
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ESP32-WROVER-B & ESP32-WROVER-IB Datasheet v1.8
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Revision History
Date
Version
Release notes
Official release:
• Added certifications and reliability test items the module has passed in Table 2:
ESP32-WROVER-B Specifications;
2018.07
V1.0
• Updated the dimensions of the module;
• Changed the module’s recommended operating temperature from –40°C ~ 85°C
to –40°C ~ 65°C;
• Updated table 8: Wi-Fi Radio.
2018.06
V0.1
Preliminary release.
Not Recommended For New Designs (NRND)
Espressif Systems
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ESP32-WROVER-B & ESP32-WROVER-IB Datasheet v1.8
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Disclaimer and Copyright Notice
Information in this document, including URL references, is subject to change without notice.
ALL THIRD PARTY’S INFORMATION IN THIS DOCUMENT IS PROVIDED AS IS WITH NO
WARRANTIES TO ITS AUTHENTICITY AND ACCURACY.
NO WARRANTY IS PROVIDED TO THIS DOCUMENT FOR ITS MERCHANTABILITY, NONINFRINGEMENT, FITNESS FOR ANY PARTICULAR PURPOSE, NOR DOES ANY WARRANTY
OTHERWISE ARISING OUT OF ANY PROPOSAL, SPECIFICATION OR SAMPLE.
All liability, including liability for infringement of any proprietary rights, relating to use of information
in this document is disclaimed. No licenses express or implied, by estoppel or otherwise, to any
intellectual property rights are granted herein.
The Wi-Fi Alliance Member logo is a trademark of the Wi-Fi Alliance. The Bluetooth logo is a
registered trademark of Bluetooth SIG.
www.espressif.com
All trade names, trademarks and registered trademarks mentioned in this document are property
of their respective owners, and are hereby acknowledged.
Copyright © 2022 Espressif Systems (Shanghai) Co., Ltd. All rights reserved.
Not Recommended For New Designs (NRND)
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