C4D10120D

C4D10120D VRRM  =  1200 V Silicon Carbide Schottky Diode IF (TC=135˚C) = 18 A** Z-Rec Rectifier ® Q c Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • • • • TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • •  = 54 nC** Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C4D10120D TO-247-3 C4D10120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current (Per Leg/Device) 19/38 9/18 5/10 A TC=25˚C TC=135˚C TC=160˚C Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 26* 18* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 46* 36* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 400* 320* A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 93/187 40/81 W TC=25˚C TC=110˚C Fig. 4 200 V/ns VR=0-650V Ptot Power Dissipation(Per Leg/Device) dV/dt Diode dV/dt ruggedness ∫i2dt i2t value 10.6* 6.5* A2s TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-247 Mounting Torque * Per Leg, ** Per Device 1 Value C4D10120D Rev. H, 09-2016 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.4 1.9 1.8 3 V IR Reverse Current 20 40 150 300 QC Total Capacitive Charge C EC Test Conditions Note IF = 5 A TJ=25°C IF = 5 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 27 nC VR = 800 V, IF = 5A di/dt = 200 A/μs TJ = 25°C Fig. 5 Total Capacitance 390 27 20 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 8.0 μJ VR = 800 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC * Parameter Thermal Resistance from Junction to Case Per Leg, ** Typ. Unit Note 1.6* 0.8** °C/W Fig. 9 Per Device Typical Performance (Per Leg) 10 1000 TJ=-55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 9 8 900 800 700 Current I (μA)(µA) 6 5 4 500 400 3 300 2 200 1 100 0 TJ=-55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 0 0 0.5 1 1.5 2 VF (V) Voltage (V) 2.5 Figure 1. Forward Characteristics 2 600 R F Current I (A) (A) 7 C4D10120D Rev. H, 09-2016 3 3.5 0 500 1000 1500 VR (V) Voltage (V) Figure 2. Reverse Characteristics 2000 Typical Performance (Per Leg) C4D10120D Per Leg Current Derating 100.0 60 55 10% 20% 30% 50% 70% DC 45 40 90.0 Duty Duty Duty Duty Duty 80.0 70.0 35 60.0 30 50.0 PTot (W) I (A) F(peak) IF(PEAK) Peak Forward Current (A) 50 25 20 15 40.0 30.0 20.0 10 10.0 5 0.0 0 25 50 75 100 125 150 175 25 Tc Case Temperature (C) 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 4. Power Derating Figure 3. Current Derating 35 450 400 30 350 25 300 C (pF) Qc (nC) 20 15 250 200 150 10 100 5 50 0 0 0 200 400 600 VR (V) 800 Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D10120D Rev. H, 09-2016 1000 0.1 1 10 VR (V) 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 14 14.0 1000 1000 10.0 10 8.08 (A) IFSMIFSM (A) E (mJ) C EC Capacitive Energy (uJ) 12 12.0 6.06 100 100 TJ_initial = 25°C T = 110°C J_initial 4.04 2.02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 VR Reverse Voltage (V) V (V) tptp(s) (s) R Figure 7. Typical Capacitance Stored Energy, per leg Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform), per leg Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Thermal Resistance 1 0.5 0.3 100E-3 0.1 0.05 10E-3 0.02 SinglePulse 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Device Transient Thermal Impedance 4 C4D10120D Rev. H, 09-2016 100E-3 1 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 POS e Inches Millimeters Min Max Min A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 N NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 3 T 17.5° REF W 3.5° REF X 4° REF Part Number Package Marking C4D10120D TO-247-3 C4D10120 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D10120D Rev. H, 09-2016 Max Diode Model VfT = VT + If * RT VT = 0.96 + (Tj * -1.22*10-3) RT = 0.08 + (Tj * 8.5*10-4) Note: Junction Temperature In Degrees Celsius, Note: TTj j = is Diode diode junction temperature in degrees Celsius valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D10120A Rev. H, 09-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power