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SM8S30CATR

SM8S30CATR

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    DO-218AB

  • 描述:

    SM8S30CATR

  • 数据手册
  • 价格&库存
SM8S30CATR 数据手册
SM8S20A THRU SM8S43A Technical Data Data Sheet N2148, Rev. - SM8S20A THRU SM8S43A TRANSIENT VOLTAGE SUPPRESSOR Features   DO-218AB Circuit Diagram      Junction passivation optimized design passivated anisotropic rectifier technology TJ = 175℃ capability suitable for high reliability and automotive requirement. Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability AEC-Q101 qualified. Mechanical Data     Case: DO-218AB Molding compound meets UL 94V-0 flammability rating Base P/NHE3-RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 Maximum Ratings and Thermal Characteristics@TA=25°C unless otherwise specified Parameter Symbol Peak pulse power dissipation on 10/1000 μs waveform Peak pulse power dissipation on 10/10000 μs waveform PPPM Value Unit 6600 W 5200 W Power dissipation on infinite heat sink at TC = 25°C PD 8.0 W Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A Typical thermal resistance, junction to case RθJC 0.9 °C/W TJ,TSTG -55 to 175 °C Operating Junction and Storage Temperature Range  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SM8S20A THRU SM8S43A Technical Data Data Sheet N2148, Rev. - Electrical Characteristics@TA=25°C unless otherwise specified DEVICE TYPE REVERSE STAND-OFF VOLTAGE VRWM (V) BREAKDOWN VOLTAGE VBR (V) @IT TEST CURRENT IT CLAMPING VOLTAGE VC@IPP PEAK PULSE CURRENT AT 10/1000μs WAVEFORM IPP REVERSE LEAKAGE CURRENT IR MIN. MAX. MA V A μA@25°C μA@175°C SM8S20A 20 22.2 24.5 5 32.4 204 5 150 SM8S22A 22 24.4 26.9 5 35.5 186 5 150 SM8S24A 24 26.7 29.5 5 38.9 170 5 150 SM8S26A 26 28.9 31.9 5 42.1 157 5 150 SM8S28A 28 31.1 34.4 5 45.4 145 5 150 SM8S30A 30 33.3 36.8 5 48.4 136 5 150 SM8S32A 32 35.5 39.4 5 51.4 128.5 5 150 SM8S33A 33 36.7 40.6 5 53.3 124 5 150 SM8S36A 36 40.0 44.2 5 58.1 114 5 150 SM8S40A 40 44.4 49.1 5 64.5 102 5 150 SM8S43A 43 47.8 52.8 5 69.4 95.1 5 150 Mechanical Dimensions DO-218AB(Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 9.5 10.5 0.374 0.413 B 8.3 8.7 0.327 0.342 C D E 13.3 13.7 0.524 0.539 15.0 16.0 0.592 0.628 8.5 9.1 0.335 0.358 F 9.5 10.1 0.374 0.398 G H J K L M N P 2.4 3.0 0.094 0.118 0.5 0.7 0.020 0.028 2.7 1.9 4.7 14.2 3.5 1.6 3.7 2.1 5.1 14.8 4.1 2.2 0.106 0.075 0.185 0.559 0.138 0.063 0.146 0.083 0.201 0.583 0.161 0.087  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SM8S20A THRU SM8S43A Technical Data Data Sheet N2148, Rev. - Ordering Information Device SM8S20A THRU SM8S43A Marking Diagram Package Shipping DO-218AB 750pcs / reel SM8S20A XXXX For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Carrier Tape Specification DO-218AB  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  = Part Name = Date Code SM8S20A THRU SM8S43A Technical Data Data Sheet N2148, Rev. - Ratings and Characteristics Curves Input Peak Pulse Current(%) Power Dissipation(W) 8.0 6.0 4.0 2.0 0 0 50 100 150 Case Temperature (℃) 200 150 tr=10μs Peak Value IPP 100 Half Value-IPP 0 0 td 10 40 Reverse Surge Power(W) Load Dump Power (W) 30 10000 5000 4000 3000 2000 1000 50 75 100 125 150 Case Temperature (℃) 1000 10 175 100 Pulse FIG.3: Load Dump Power Characteristics (10ms Exponential Waveform) Width(ms)- 21IPP Exponential Waveform FIG.4: Reverse Power Capability 100000 100 CJ-Junction Capacitance(pF) Transient Thermal Impedance(℃/W) 20 t-Time (ms) FIG.2: Pulse waveform 6000 R θJA 10 RθJC 1.0 0.1 0.01 0.01 1 2IPP 50 FIG.1: Power derating curve 0 25 Tj=25 ℃ Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50% of IPP 0.1 1 t-Pulse Width (s) 10 100 FIG.5: Typical Transient Thermal Impedance Tj=25 ℃ f=1.0MHz Vsig=50mV p-p Measured at Zero Bias 10000 1000 10 Measured at Stand-Off Voltage V R 15 20 25 30 35 40 VR-Reverse Stand-Off Voltage (V) 45 FIG.6: Typical Junction Capacitance  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N2148, Rev. - SM8S20A THRU SM8S43A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 
SM8S30CATR 价格&库存

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