SM8S20A
THRU
SM8S43A
Technical Data
Data Sheet N2148, Rev. -
SM8S20A THRU SM8S43A TRANSIENT VOLTAGE SUPPRESSOR
Features
DO-218AB
Circuit Diagram
Junction passivation optimized design passivated
anisotropic rectifier technology
TJ = 175℃ capability suitable for high reliability and
automotive requirement.
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
AEC-Q101 qualified.
Mechanical Data
Case: DO-218AB
Molding compound meets UL 94V-0 flammability rating
Base P/NHE3-RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable
per J-STD-002 and JESD22-B102
Maximum Ratings and Thermal Characteristics@TA=25°C unless otherwise specified
Parameter
Symbol
Peak pulse power dissipation on 10/1000 μs waveform
Peak pulse power dissipation on 10/10000 μs waveform
PPPM
Value
Unit
6600
W
5200
W
Power dissipation on infinite heat sink at TC = 25°C
PD
8.0
W
Peak forward surge current 8.3 ms single half sine-wave
IFSM
700
A
Typical thermal resistance, junction to case
RθJC
0.9
°C/W
TJ,TSTG
-55 to 175
°C
Operating Junction and Storage
Temperature Range
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SM8S20A
THRU
SM8S43A
Technical Data
Data Sheet N2148, Rev. -
Electrical Characteristics@TA=25°C unless otherwise specified
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM (V)
BREAKDOWN
VOLTAGE
VBR (V)
@IT
TEST
CURRENT
IT
CLAMPING
VOLTAGE
VC@IPP
PEAK PULSE
CURRENT AT
10/1000μs
WAVEFORM
IPP
REVERSE LEAKAGE
CURRENT
IR
MIN.
MAX.
MA
V
A
μA@25°C
μA@175°C
SM8S20A
20
22.2
24.5
5
32.4
204
5
150
SM8S22A
22
24.4
26.9
5
35.5
186
5
150
SM8S24A
24
26.7
29.5
5
38.9
170
5
150
SM8S26A
26
28.9
31.9
5
42.1
157
5
150
SM8S28A
28
31.1
34.4
5
45.4
145
5
150
SM8S30A
30
33.3
36.8
5
48.4
136
5
150
SM8S32A
32
35.5
39.4
5
51.4
128.5
5
150
SM8S33A
33
36.7
40.6
5
53.3
124
5
150
SM8S36A
36
40.0
44.2
5
58.1
114
5
150
SM8S40A
40
44.4
49.1
5
64.5
102
5
150
SM8S43A
43
47.8
52.8
5
69.4
95.1
5
150
Mechanical Dimensions DO-218AB(Inches/Millimeters)
SYMBOL
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.5
10.5
0.374
0.413
B
8.3
8.7
0.327
0.342
C
D
E
13.3
13.7
0.524
0.539
15.0
16.0
0.592
0.628
8.5
9.1
0.335
0.358
F
9.5
10.1
0.374
0.398
G
H
J
K
L
M
N
P
2.4
3.0
0.094
0.118
0.5
0.7
0.020
0.028
2.7
1.9
4.7
14.2
3.5
1.6
3.7
2.1
5.1
14.8
4.1
2.2
0.106
0.075
0.185
0.559
0.138
0.063
0.146
0.083
0.201
0.583
0.161
0.087
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SM8S20A
THRU
SM8S43A
Technical Data
Data Sheet N2148, Rev. -
Ordering Information
Device
SM8S20A
THRU
SM8S43A
Marking Diagram
Package
Shipping
DO-218AB
750pcs / reel
SM8S20A
XXXX
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Carrier Tape Specification DO-218AB
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= Part Name
= Date Code
SM8S20A
THRU
SM8S43A
Technical Data
Data Sheet N2148, Rev. -
Ratings and Characteristics Curves
Input Peak Pulse Current(%)
Power Dissipation(W)
8.0
6.0
4.0
2.0
0
0
50
100
150
Case Temperature (℃)
200
150
tr=10μs
Peak Value
IPP
100
Half Value-IPP
0
0
td
10
40
Reverse Surge Power(W)
Load Dump Power (W)
30
10000
5000
4000
3000
2000
1000
50
75
100
125
150
Case Temperature (℃)
1000
10
175
100
Pulse
FIG.3: Load Dump Power Characteristics
(10ms Exponential Waveform)
Width(ms)- 21IPP
Exponential Waveform
FIG.4: Reverse Power Capability
100000
100
CJ-Junction Capacitance(pF)
Transient Thermal Impedance(℃/W)
20
t-Time (ms)
FIG.2: Pulse waveform
6000
R θJA
10
RθJC
1.0
0.1
0.01
0.01
1
2IPP
50
FIG.1: Power derating curve
0
25
Tj=25 ℃
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50% of IPP
0.1
1
t-Pulse Width (s)
10
100
FIG.5: Typical Transient Thermal Impedance
Tj=25 ℃
f=1.0MHz
Vsig=50mV p-p
Measured at Zero Bias
10000
1000
10
Measured at Stand-Off
Voltage V R
15
20
25
30
35
40
VR-Reverse Stand-Off Voltage (V)
45
FIG.6: Typical Junction Capacitance
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Technical Data
Data Sheet N2148, Rev. -
SM8S20A
THRU
SM8S43A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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