INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Features
•
Low power consumption
•
General purpose leads
•
Bulk, Available on tape and reel
•
Fast response time
•
High photo sensitivity
•
Small junction capacitance
•
Compliance with EU REACH
•
The product itself remain within RoHS
compliant version
Infrared application system
•
Optoelectronic automatic control system
Optoelectronic switch
•
Printer
•
Counters and sorters
•
Encoders
•
Floppy disk drive
•
Video camera, tape and card readers
•
Position sensors
Description
Applications
•
•
•
The INL-3ANPT30 is a high speed and high
sensitive silicon NPN phototransistor in a
standard 3mm epoxy package.
•
Due to its black epoxy, the device is matched to
visible light and infrared radiation.
Package Dimensions in mm
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ± 0.25 mm (.010″) unless otherwise noted.
Figure 1. INL-3ANPT30 Package Dimensions
Inolux Corporation
Proprietary & Confidential
January, 24, 2019
Page 1
www.inolux-corp.com
INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Absolute Maximum Rating at 25oC
Symbol
Parameters
Ratings
Units
Notes
BVCEO
Collector-Emitter Breakdown Voltage
30
V
1
BVECO
Emitter-Collector Breakdown Voltage
5
V
2
Collector Current
20
mA
Ic
Topr
Operating Temperature
-40~+80
℃
Tstg
Storage Temperature
-40~+85
℃
Tsol
Soldering Temperature
260
℃
PD
Total Power Dissipation
75
mW
3
Notes
1. Test conditions: IC=100μA, Ee=0mW/cm2.
2. Test conditions: IE=100μA, Ee=0mW/cm2.
3. Soldering time≦5 seconds.
Electro-Optical Characteristics
Symbol
Parameters
λD
Rang of Spectral Bandwidth
Wavelength of Peak
Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
λP
BVCEO
BVECO
VCE(sat)
ICEO
IC(ON)
Collector Dark Current
On State Collector Current
tr
Rise Time
tf
Fall Time
Test
conditions
----IC=100μA
Ee=0mW/cm²
IE=100μA
Ee=0mW/cm²
IC=0.7mA
Ee=1mW/cm²
VCE=20V
Ee=0mW/cm²
Ee=1mW/cm²
λP=940nm,
VCE=5V
VCE=5V,
IC=1mA
RL=1000Ω
Min
Typ
Max
Units
400
-
1100
nm
-
940
30
-
-
V
5
-
-
V
-
-
0.4
V
-
-
100
nA
0.7
2.5
-
mA
-
15
-
uS
-
15
-
uS
nm
ESD Precaution
ATTENTION: Electrostatic Discharge (ESD) protection
The symbol above denotes that ESD precaution is needed. ESD protection for GaP and AlGaAs based chips is necessary even
though they are relatively safe in the presence of low static-electric discharge. Parts built with AlInGaP, GaN, or/and InGaN based
chips are STATIC SENSITIVE devices. ESD precaution must be taken during design and assembly.
If manual work or processing is needed, please ensure the device is adequately protected from ESD during the process.
Please be advised that normal static precautions should be taken in the handling and assembly of this device to prevent damage or degradation which
may be induced by electrostatic discharge (ESD).
Inolux Corporation
Proprietary & Confidential
January, 24, 2019
Page 2
www.inolux-corp.com
INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Typical Characteristic Curves
Inolux Corporation
Proprietary & Confidential
January, 24, 2019
Page 3
www.inolux-corp.com
INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Inolux Corporation
Proprietary & Confidential
January, 24, 2019
Page 4
www.inolux-corp.com
INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Ordering Information
Product
Symbol
INL-3ANPT30
IC(ON)
Parameters
On State Collector Current
Test conditions
Min
Typ
Max
Units
Orderable
Part Number
Ee=1mW/cm²
λP=940nm,
VCE=5V
0.7
2.5
-
mA
INL-3ANPT30
X
X
Label Specifications
Inolux P/N:
I
N
L
Inolux
Lamp Type
-
3
A
N
PT
3
0
Package
Lens
Color
View Angle
3A =
standard
3mm
N=
Black
Epoxy
PT = Photo
Transistor
30 = 30 deg.
.
X
X
Customized
Stamp-off
Lot No.:
Z
Internal
Tracker
Inolux Corporation
Proprietary & Confidential
2
0
1
7
Year (2017, 2018, …..)
01
24
001
Month
Date
Serial
January, 24, 2019
Page 5
www.inolux-corp.com
INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Reliability
Item
Precondition
Frequency/ lots/ samples/
failures
For all reliability
monitoring tests according
to JEDEC Level 2
1Q/ 1/ 22/ 0
Solderability
Standards
Reference
J-STD-020
CNS-554
1.) Baking at 85°C for 24hrs
2.) Moisture storage at 85°C/ 60% R.H. for
168hrs
Accelerated aging 155°C/ 24hrs
Tinning speed: 2.5+0.5cm/s
Tinning: A: 215°C/ 3+1s or B: 260°C/ 10+1s
Dipping soldering terminal only
Soldering bath temperature
A: 260+/-5°C; 10+/-1s
B: 350+/-10°C; 3+/-0.5s
1.) Precondition: 85°C baking for 24hrs
85°C/ 60%R.H. for 168hrs
2.) Tamb25°C; IF=20mA; duration 1000hrs
Tamb: 85°C
Humidity: 85% R.H., IF=5mA
Duration: 1000hrs
Tamb: 55°C
IF=20mA
Duration: 1000hrs
Tamb25°C, If=20mA,, Ip=100mA, Duty
cycle=0.125 (tp=125μs,T=1sec)
Duration 500hrs)
A cycle: -40 degree C 15min; +85 degree C
15min
Thermal steady within 5 min..
300 cycles
2 chamber/ Air-to-air type
60+3°C
90+5/-10% R.H. for 500hrs
100+10°C for 500hrs
CNS-6118
-40+5°C for 500hrs
JESD22-B102-B
And CNS-5068
CNS-5067
Resistance to
soldering heat
1Q/ 1/ 40/ 0
CNS-11829
Operating life test
High humidity,
1Q/ 1/ 45/ 0
high temperature
bias
1Q/ 1/ 20
High temperature
bias
JESD-A101-B
IN specs.
1Q/ 1/ 40/ 0
Pulse life test
1Q/ 1/ 76/ 0
Temperature
cycle
High humidity
1Q/ 1/ 40/ 0
storage test
High temperature 1Q/ 1/ 40/ 0
storage test
Low temperature 1Q/ 1/ 40/ 0
storage test
Inolux Corporation
Proprietary & Confidential
Conditions
JESD-A104-A
IEC 68-2-14, Nb
CNS-6117
January, 24, 2019
Page 6
www.inolux-corp.com
INL-3ANPT30
3mm Phototransistor
Though Hole Lamp LED
Revision History
Changes since last revision
Initial Release
Page
Version No.
1.0
Revision Date
01-24-2019
DISCLAIMER
INOLUX reserves the right to make changes without further notice to any products herein to improve reliability, function or design. INOLUX does not
assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent
rights, nor the rights of others.
LIFE SUPPORT POLICY
INOLUX’s products are not authorized for use as critical components in life support devices or systems without the express written approval of the
President of INOLUX or INOLUX CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or system, or to affect its safety or effectiveness.
Inolux Corporation
Proprietary & Confidential
January, 24, 2019
Page 7
www.inolux-corp.com
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