C4D20120D

C4D20120D VRRM =   1200 V Silicon Carbide Schottky Diode IF (TC=135˚C) =    33 A** Z-Rec Rectifier ® Q c Features • • • • • Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • •   =   104 nC** TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C4D20120D TO-247-3 C4D20120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Test Conditions Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V 34/68 16.5/33 10/20 A TC=25˚C TC=135˚C TC=157˚C Continuous Forward Current (Per Leg/Device) Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 47* 31.5* A TC=25˚C, tP=10 ms, Half Sine Pulse TC-110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Peak Forward Surge Current 71* 59.5* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 750* 620* A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 176/352 76/152 W TC=25˚C TC=110˚C Fig. 4 200 V/ns VR=0-960V Ptot Power Dissipation(Per Leg/Device) dV/dt Diode dV/dt ruggedness ∫i2dt i2t value 25* 17.5* A2s TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-247 Mounting Torque 1 Unit VRRM IF * Value Per Leg, ** Per Device C4D20120D Rev. F, 09-2016 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.2 1.8 3 V IR Reverse Current 30 55 250 350 QC Total Capacitive Charge C EC Test Conditions Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 52 nC VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C Fig. 5 Total Capacitance 754 45 38 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 14.5 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC * Parameter Thermal Resistance from Junction to Case Per Leg, ** Typ. Unit Note 0.85* 0.43** °C/W Fig. 9 Per Device Typical Performance (Per Leg) 700 0.0007 20 20 600 0.0006 12 12 10 10 88 66 44 500 0.0005 400 0.0004 0.0003 300 R 14 14 Current (μA) IR Reverse I (μA) (A) IF Forward ICurrent (A) IF Forward Current F 16 16 TJ=-55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J IR Reverse Current (A) 18 18 200 0.0002 0.0001 100 TJ=-55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 22 00 00 0 0 0.5 1 1.5 2 2.5 3 3.5 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) VF Forward VF (V)Voltage Figure 1. Forward Characteristics 2 C4D20120D Rev. F, 09-2016 0 500 1000 1500 2000 0 500 1000 1500 2000 VR Reverse Voltage (V) VR Reverse Voltage VR (V) Figure 2. Reverse Characteristics Typical Performance (Per Leg) 120 200.0 180.0 160.0 I 60 140.0 Duty Duty Duty Duty Duty PTot (W) 10% 20% 30% 50% 70% DC 80 (A) IF(PEAK) Peak Forward Current (A) F(peak) 100 120.0 100.0 80.0 40 60.0 40.0 20 20.0 0 25 50 75 100 125 150 0.0 175 25 50 75 Tc Case T Temperature ˚C (°°C) 100 125 150 175 TC ˚C C Figure 3. Current Derating Figure 4. Power Derating 800 70 700 60 600 50 C (pF) Qc (nC) 500 40 30 400 300 20 200 10 100 0 0 200 400 600 800 0 1000 0.1 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D20120D Rev. F, 09-2016 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 25 25.0 1000 1000 EC Capacitive Energy (uJ) C 20 20.0 (A) IFSMIFSM (A) E (mJ) 15 15.0 10 10.0 100 100 TJ_initial = 25°C T = 110°C J_initial 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Thermal Resistance Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Figure 7. Typical Capacitance Stored Energy, per leg Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform), per leg 0.5 100E-3 0.3 0.1 0.05 10E-3 SinglePulse 0.02 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Device Transient Thermal Impedance 4 C4D20120D Rev. F, 09-2016 100E-3 1 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS A Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 5.10 E2 .145 .201 3.68 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC L .780 .800 L1 .161 .173 N ØP NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 19.81 20.32 4.10 4.40 3.51 3.65 3 .138 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5° REF W 3.5° REF X 4° REF Part Number Package Marking C4D20120D TO-247-3 C4D20120 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D20120D Rev. F, 09-2016 Diode Model Diode Model CSD04060 VfT = VT+If*RT Vf T = VT + If*R T V = 0.98+(T * -1.71*10-3) VT= 0.965 +T(Tj * -1.3*10-3J) -4 R = 0.040+(T -3 J* 5.32*10 ) RT= 0.096 +T(T j * 1.06*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D20120D Rev. F, 09-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power