SK520B
Technical Data
Data Sheet N0952, Rev. A
SK520B SCHOTTKY RECTIFIER
Features
SMB
Circuit Diagram
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
This is a Pb - Free device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
Condition
-
Average Rectified Forward Current
IF (AV)
Peak One Cycle Non-Repetitive
Surge Current
50% duty cycle @TA=105°C, rectangular
wave form (Note 1)
IFSM
8.3ms, Half Sine pulse, TC = 25 C
Max.
Units
200
V
5
A
120
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
VF1
Condition
@ 5A, Pulse, TJ = 25 C
VF2
@ 5A, Pulse, TJ = 125 C
IR1
@VR = rated VR, TJ = 25 C
IR2
@VR = rated VR, TJ = 125 C
Junction Capacitance
CT
@VR = 5V, TC = 25 C, fSIG = 1MHz
Series Inductance
LS
Measured lead to lead 5 mm from
package body
-
Reverse Current*
Voltage Rate of Change
dv/dt
* Pulse width < 300 µs, duty cycle < 2%
Note:1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
Typ.
Max.
0.85
1.10
0.74
0.90
V
0.0002
1
mA
0.05
7
mA
140
200
pF
8.0
-
nH
-
10,000
V/s
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Units
V
SK520B
Technical Data
Data Sheet N0952, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
TJ
Tstg
-
-55 to +150
-55 to +150
C
C
10
C/W
0.09
g
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction
to Ambient
Approximate Weight
RJA
DC operation
wt
-
Ratings and Characteristics Curves
1
Reverse Current-IR(MA)
TJ=25℃
100
10
5
10
15
20
25
30
35
40
TJ=125℃
0.1
0.01
0.001
TJ=25℃
0.0001
0.00001
10
20
Reverse Voltage-VR(V)
30
40
50
60
TJ=125℃
TJ=25℃
1
0.5
0.6
80
90
100
Fig.2-Typical Values Of Reverse Current
100
10
70
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current-IF(A)
Junction Capacitance-CT(PF)
1000
0.7
0.8
0.9
1
1.1
1.2
Forward Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
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SK520B
Technical Data
Data Sheet N0952, Rev. A
Mechanical Dimensions SMB
SYMBOL
Ordering Information
Device
SK520B
Package
SMB
(Pb-Free)
Millimeters
Inches
Min.
Max.
Min.
Max.
A
3.30
3.94
0.130
0.155
B
4.06
4.70
0.160
0.185
C
1.80
2.20
0.071
0.087
D
0.152
0.305
0.006
0.012
E
4.80
5.59
0.189
0.220
F
2.10
2.60
0.083
0.102
G
0.051
0.203
0.002
0.008
H
0.76
1.52
0.030
0.060
Marking Diagram
Where XXXXX is YYWWL
Shipping
B
5
20
YY
WW
L
3000pcs / reel
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
= Package type
= Forward Current (5A)
= Reverse Voltage (200V)
= Year
= Week
= Lot Number
Cautions:Molding resin
Carrier Tape Specification SMB
SYMBOL
A
B
C
d
E
F
P
P0
P1
T
W
Millimeters
Min.
Max.
2.97
5.70
2.32
1.40
1.40
5.60
3.90
3.90
1.90
0.25
3.17
5.90
2.52
1.60
1.60
5.70
4.10
4.10
2.10
0.35
11.80
12.20
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SK520B
Technical Data
Data Sheet N0952, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party.
When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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