C3D10060G
VRRM
Silicon Carbide Schottky Diode
Z-Rec Rectifier
Qc = 24 nC
Features
Package
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-263-2
Benefits
•
•
•
•
•
600 V
IF (TC=135˚C) = 14 A
®
•
•
•
•
•
•
•
=
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C3D10060G
TO-263-2
C3D10060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Value
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
Continuous Forward Current
29
14
10
A
TC=25˚C
TC=135˚C
TC=151˚C
44
30.5
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP=10 ms, Half Sine Wave
IF
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
90
71
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
Fig. 8
IF,Max
Non-Repetitive Peak Forward Surge Current
860
680
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
Fig. 8
Ptot
Power Dissipation
125
54
W
TC=25˚C
TC=110˚C
Fig. 4
Diode dV/dt ruggedness
200
V/ns
VR=0-600V
i2t value
40.5
25
A2s
Operating Junction and Storage Temperature
-55 to
+175
˚C
dV/dt
∫i2dt
TJ , Tstg
1
Parameter
C3D10060G Rev. H, 01-2017
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.0
1.8
2.4
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
Fig. 1
IR
Reverse Current
10
20
50
200
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
24
nC
VR = 400 V, IF = 10 A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
460.5
44
40
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
3.6
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
1.2
°C/W
Fig. 9
Typical Performance
100
30
25
90
TJ = -55 °C
TJ = 75 °C
TJ = 125 °C
TJ = 175 °C
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0 200 400 600 800 1000 1200
FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
80
70
TJ = 175 °C
60
TJ = 125 °C
50
TJ = 75 °C
R
15
Reverse Leakage ICurrent,
(mA) IRR (mA)
20
F
Foward Current,
I (A) IF (A)
TJ = 25 °C
C3D10060G Rev. H, 01-2017
4.0 4.5 5.0
40
TJ = 25 °C
30
TJ = -55 °C
20
10
0
0
100 200 300 400 500 600 700 800 900 1000
ReverseVVoltage,
(V) VR (V)
R
Figure 2. Reverse Characteristics
Typical Performance
100
160
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
80
140
120
100
F
PTot(W)
(W)
PTOT
IF(peak)
(A)
I (A)
60
40
80
60
40
20
20
0
0
25
50
75
100
125
150
175
25
˚C
TTCC(°C)
150
500
175
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
450
400
30
350
25
Capacitance
C (pF)(pF)
CapacitiveQ
Charge,
(nC) QC (nC)
C
125
Figure 4. Power Derating
20
15
10
300
250
200
150
100
5
50
0
0
100
200
300
400
500
600
700
ReverseVVoltage,
(V) VR (V)
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
100
C
Conditions:
TJ = 25 °C
35
75
˚C
TTC (°C)
Figure 3. Current Derating
40
50
C3D10060G Rev. H, 01-2017
0
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1,000
10
9
7
IIFSM (A)
(A)
6
FSM
5
C
Capacitance StoredE Energy,
µJ)
(mJ) EC (µ
8
4
100
TJ_initial = 25 °C
TJ_initial = 110 °C
3
2
1
0
0
100
200
300
400
500
600
10
10E-6
700
ReverseVVoltage,
(V) VR (V)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
Thermal Resistance (˚C/W)
1E-3
tp (s)
Time,
tp (s)
R
1
100E-6
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D10060G Rev. H, 01-2017
100E-3
1
10E-3
Package Dimensions
Package TO-263-2
POS
Inches
Millimeters
Min
Max
Min
Max
A
0.17
0.18
4.32
4.57
A1
-
0.01
-
0.25
b
0.028
0.037
0.71
0.94
b2
0.045
0.055
1.15
1.4
c
0.014
0.025
0.356
0.635
c2
0.048
0.055
1.22
1.4
D
0.35
0.37
8.89
9.4
D1
0.255
0.324
6.48
8.23
10.28
E
0.395
0.405
10.04
E1
0.31
0.318
7.88
8.08
e
0.1
BSC.
2.54
BSC.
L
0.58
0.62
14.73
15.75
L1
0.09
0.11
2.29
2.79
L2
0.045
0.055
1.15
1.39
L3
0.05
0.07
1.27
1.77
q
0°
8°
0°
8°
Note: Tab “M” may not be present
PIN 1
M
CASE
PIN 2
Recommended Solder Pad Layout
15.990
8.890
10.668
3.556
1.540
2.540
Tjb May 2015
MX+DI
Part Number
Package
Marking
C3D10060G
TO-263-2
C3D10060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C3D10060G Rev. H, 01-2017
Diode Model
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT + If * RT
VT = 0.94 + (TJ * -1.3*10-3)
RT = 0.044 + (TJ * 4.4*10-4)
VT
RT
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
•
•
•
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D06060G Rev. H, 01-2018
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
