PS2501-S

UMW R UMW PS2501 PHOTOCOUPLER PS2501-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2501-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2501-2 FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 s TYP., tf = 5 s TYP.) • UL approved: File No. E492440 Unit: mm PS2501-3 Weight: 0.31g www.umw-ic.com 1 友台半导体有限公司 UMW R UMW PS2501 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified) Ratings Parameter Diode Symbol PS2501-2,-4 Unit Reverse Voltage VR 6 V Forward Current (DC) IF 80 mA Power Dissipation Derating Power Dissipation Peak Forward Current Transistor PS2501-1, *1 PD/C 1.5 1.2 mW/C PD 150 120 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA/ch Collector Current Power Dissipation Derating Power Dissipation *2 PC/C 1.5 1.2 mW/C PC 150 120 mW/ch Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature TA 55 to +100 C Storage Temperature Tstg 55 to +150 C *1 PW = 100 s, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output • Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example) UMW PS 2501- X X X−X None - DIP S - SMD CTR RANK 1 - 4PIN 2 - 8PIN 3 - 12PIN www.umw-ic.com 2 友台半导体有限公司 UMW R UMW PS2501 ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 5 mA, VCE = 5 V VCE (sat) IF = 10 mA, IC = 2 mA Collector Saturation MIN. TYP. MAX. Unit 1.17 1.4 V 5 A 50 80 300 pF 100 nA 600 % 0.3 V Voltage RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz Rise Time Fall Time *2 tr *2  1011 Isolation Resistance 0.5 pF 3 s VCC = 10 V, IC = 2 mA, RL = 100  tf 5 *1 C *2 Test circuit for switching time Pulse Input IF VCC PW = 100 s Duty Cycle = 1/10 50  VOUT RL = 100 Ω Current Transfer Ratio Type PS2501 Classificatio n (Note 1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking of Classification None 80 600 Blank Rank Q 100 200 Q Rank W 130 260 W Rank H 80 160 H Rank D 100 300 D Rank M 80 240 M Rank L 200 400 L Rank K 300 _ 600 _ K _ Rank www.umw-ic.com 3 友台半导体有限公司 UMW R UMW PS2501 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2501-1 100 PS2501-2 PS2501-4 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 125 PS2501-1 100 PS2501-2 PS2501-4 50 1.2 mW/˚C 0 150 75 50 100 125 150 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 70 50 TA = +100 ˚C +60 ˚C +25 ˚C 10 60 Collector Current IC (mA) Forward Current IF (mA) 25 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 50 40 30 20 IF = 5 mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 1.5 mW/˚C 100 10 1 – 50 –25 0 25 50 75 5 IF = 1 mA 1 0.5 0.1 0 100 Ambient Temperature TA (˚C) www.umw-ic.com 10 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) 4 友台半导体有限公司 UMW R UMW PS2501 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 450 1.0 / //// ///// // // /// 0.8 // 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 400 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 350 300 250 200 150 100 50 0 100 0.05 0.1 SWITCHING TIME vs. LOAD RESISTANCE tf tr Switching Time t (  s) Switching Time t (  s) 10 5 10 50 SWITCHING TIME vs. LOAD RESISTANCE 1 000 IC = 2 mA, VCC = 10 V, CTR = 290% 1 Forward Current IF (mA) Ambient Temperature TA (˚C) 50 0.5 td ts 1 tf IF = 5 mA, VCC = 5 V, CTR = 290% ts 100 10 tr 0.1 10 td 500 1 k 5 k 10 k 50 k 100 k Load Resistance RL () Load Resistance RL () FREQUENCY RESPONSE LONG TERM CTR DEGRADATION 1.2 IF = 5 mA, VCE = 5 V IF = 5 mA (TYP.) 1.0 CTR (Relative Value) 0 Normalized Gain GV 1 100 5 k 10 k 500 1 k 50 100 –5 –10 100  –15 RL = 1 k 0.8 TA = 25 ˚C 0.6 TA = 60 ˚C 0.4 0.2 –20 300  0.5 1 2 5 10 20 0 50 100 200 500 Frequency f (kHz) www.umw-ic.com 102 103 104 105 Time (Hr) 5 友台半导体有限公司