PDTA124EMB,315

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 83B PDTA124EMB SO T8 PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. 1.2 Features and benefits  100 mA output current capability  Simplifies circuit design  Reduces component count  AEC-Q101 qualified  Built-in bias resistors  Leadless ultra small SMD plastic package  Reduces pick and place costs  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -50 V IO output current - - -100 mA R1 bias resistor 1 (input) 15.4 22 28.6 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 Tamb = 25 °C PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 I input (base) 2 G GND (emitter) Simplified outline Graphic symbol 1 3 3 3 O output (collector) R1 1 2 Transparent top view R2 2 SOT883B (DFN1006B-3) sym003 3. Ordering information Table 3. Ordering information Type number PDTA124EMB Package Name Description Version DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 4. Marking Table 4. Marking codes Type number Marking code PDTA124EMB 0010 0101 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PDTA124EMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 2 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -50 V VCEO collector-emitter voltage open base - -50 V VEBO emitter-base voltage open collector - -10 V VI input voltage positive - 10 V negative - -40 V - -100 mA IO output current ICM peak collector current pulsed; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C Tj - -100 mA - 250 mW junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aad009 300 Ptot (mW) 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 2. Power derating curve for DFN1006B-3 (SOT883B) PDTA124EMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 3 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) [1] Conditions [1] in free air Min Typ Max Unit - - 500 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PDTA124EMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 4 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -100 nA ICEO collector-emitter cut-off VCE = -30 V; IB = 0 A; Tamb = 25 °C current VCE = -30 V; IB = 0 A; Tj = 150 °C - - -100 nA - - -5 µA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -180 µA hFE DC current gain VCE = -5 V; IC = -5 mA; Tamb = 25 °C 60 - - VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C - - -150 mV VI(off) off-state input voltage VCE = -5 V; IC = -100 µA; Tamb = 25 °C - -1.1 -0.8 V VI(on) on-state input voltage VCE = -0.3 V; IC = -5 mA; Tamb = 25 °C -2.5 -1.7 - V R1 bias resistor 1 (input) Tamb = 25 °C 15.4 22 28.6 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 CC collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 3 pF fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C - 180 - MHz [1] [1] Characteristics of built-in transistor. 006aac800 103 006aac801 -1 hFE (1) VCEsat (V) (2) (3) 102 -10-1 (1) (2) 10 (3) 1 -10-1 -1 -102 -10 -10-2 -10-1 -1 IC (mA) Fig 4. IC (mA) VCE = -5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -40 °C (3) Tamb = -40 °C DC current gain as a function of collector current; typical values PDTA124EMB Product data sheet -102 -10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 5 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 006aac802 -10 (1) VI(on) (V) 006aac803 -10 VI(off) (V) (2) (3) (1) (2) -1 -1 -10-1 -10-1 -1 -102 -10 (3) -10-1 -10-1 -1 IC (mA) Fig 6. VCE = -0.3 V VCE = -5 V (1) Tamb = -40 °C (1) Tamb = -40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C On-state input voltage as a function of collector current; typical values 006aac804 6 -10 IC (mA) Fig 7. Off-state input voltage as a function of collector current; typical values 006aac763 103 Cc (pF) fT (MHz) 4 102 2 10 -10-1 0 0 -10 -20 -30 -40 -50 VCB (V) -102 -10 IC (mA) f = 1 MHz; Tamb = 25 °C Fig 8. -1 VCE = -5 V; Tamb = 25 °C Collector capacitance as a function of collector-base voltage; typical values Fig 9. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PDTA124EMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 6 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 9. Package outline 0.65 0.55 0.40 0.34 0.35 0.20 0.12 1 0.04 max 2 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 10. Package outline SOT883B (DFN1006B-3) 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 11. Reflow soldering footprint for SOT883B (DFN1006B-3) PDTA124EMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 7 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTA124EMB v.2 20120504 Product data sheet - PDTA124EMB v.1 Modifications: PDTA124EMB v.1 PDTA124EMB Product data sheet • 7 “Characteristics”: parameter name corrected 20120426 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 - © NXP B.V. 2012. All rights reserved. 8 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 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Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 9 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PDTA124EMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 10 of 11 PDTA124EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .6 Quality information . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 May 2012 Document identifier: PDTA124EMB