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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PBSS4140DPN
40 V low VCEsat NPN/PNP
transistor
Product data sheet
2001 Dec 13
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
FEATURES
PBSS4140DPN
QUICK REFERENCE DATA
• 600 mW total power dissipation
SYMBOL
• Low collector-emitter saturation voltage
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
peak collector current
1
A
• Improved device reliability due to reduced heat
generation
ICM
peak collector current
2
A
• Replaces two SOT23 packaged low VCEsat transistors
on same PCB area
TR1
NPN
−
−
TR2
PNP
−
−
RCEsat
equivalent on-resistance
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