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PESD24VS2UQ,115

PESD24VS2UQ,115

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    SOT663

  • 描述:

    ESD VRWM=24 V VBR(Min)=26.5 V VC=70 V IPP=3 A Ppp=150 W SOT663

  • 数据手册
  • 价格&库存
PESD24VS2UQ,115 数据手册
PESDxS2UQ series Double ESD protection diodes in SOT663 package Rev. 04 — 26 January 2010 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features „ Unidirectional ESD protection of up to „ ESD protection up to 30 kV two lines „ IEC 61000-4-2; level 4 (ESD) „ Max. peak pulse power: PPP = 150 W at tp = 8/20 μs „ IEC 61000-4-5 (surge); IPP = 15 A „ Low clamping voltage: VCL = 20 V at IPP = 15 A at tp = 8/20 μs „ Low reverse leakage current: IRM < 1 nA 1.3 Applications „ Computers and peripherals „ Audio and video equipment „ Communication systems „ High-speed data lines „ Parallel ports 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Conditions PESD3V3S2UQ Cd Min Typ Max Unit - - 3.3 V PESD5V0S2UQ - - 5 V PESD12VS2UQ - - 12 V PESD15VS2UQ - - 15 V PESD24VS2UQ - - 24 V PESD3V3S2UQ - 200 275 pF PESD5V0S2UQ - 150 215 pF PESD12VS2UQ - 38 100 pF PESD15VS2UQ - 32 70 pF PESD24VS2UQ - 23 50 pF diode capacitance f = 1 MHz; VR = 0 V PESDxS2UQ series Nexperia Double ESD protection diodes in SOT663 package 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 common anode Simplified outline Graphic symbol 3 1 3 2 1 2 006aaa154 3. Ordering information Table 3. Ordering information Type number PESD3V3S2UQ Package Name Description Version - plastic surface-mounted package; 3 leads SOT663 PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S2UQ E1 PESD5V0S2UQ E2 PESD12VS2UQ E3 PESD15VS2UQ E4 PESD24VS2UQ E5 © PESDXS2UQ_SER_4 Product data sheet Rev. 04 — 26 January 2010 Nexperia B.V. 2017. All rights reserved 2 of 13 PESDxS2UQ series Nexperia Double ESD protection diodes in SOT663 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 μs [1][2] IPP peak pulse current tp = 8/20 μs [1][2] - 150 W PESD3V3S2UQ - 15 A PESD5V0S2UQ - 15 A PESD12VS2UQ - 5 A PESD15VS2UQ - 5 A PESD24VS2UQ - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Per diode Per device [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured across either pins 1 and 3 or pins 2 and 3. Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit - 30 kV Per diode VESD PESD3V3S2UQ PESD5V0S2UQ - 30 kV PESD12VS2UQ - 30 kV PESD15VS2UQ - 30 kV PESD24VS2UQ - 23 kV - 10 kV PESDxS2UQ series MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured across either pins 1 and 3 or pins 2 and 3. Table 7. [1][2] ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV © PESDXS2UQ_SER_4 Product data sheet Rev. 04 — 26 January 2010 Nexperia B.V. 2017. All rights reserved 3 of 13 PESDxS2UQ series Nexperia Double ESD protection diodes in SOT663 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 μs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 3.3 V Per diode VRWM reverse standoff voltage PESD3V3S2UQ IRM VBR PESD5V0S2UQ - - 5 V PESD12VS2UQ - - 12 V PESD15VS2UQ - - 15 V PESD24VS2UQ - - 24 V reverse leakage current PESD3V3S2UQ VRWM = 3.3 V - 0.55 3 μA PESD5V0S2UQ VRWM = 5 V - 50 300 nA PESD12VS2UQ VRWM = 12 V -
PESD24VS2UQ,115 价格&库存

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PESD24VS2UQ,115
    •  国内价格 香港价格
    • 4000+0.546324000+0.06628
    • 12000+0.5437612000+0.06597
    • 16000+0.5437616000+0.06597
    • 40000+0.5437540000+0.06597
    • 60000+0.5437360000+0.06596

    库存:0

    PESD24VS2UQ,115
    •  国内价格 香港价格
    • 4000+0.488724000+0.05929
    • 12000+0.4864312000+0.05901
    • 16000+0.4864216000+0.05901
    • 40000+0.4864240000+0.05901
    • 60000+0.4864160000+0.05901

    库存:0