PESD5V0X1BCL,315

PESD5V0X1BCL Extremely low capacitance bidirectional ESD protection diode Rev. 1 — 12 March 2012 Product data sheet 1. Product profile 1.1 General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection. 1.2 Features and benefits  Bidirectional ESD protection of one line  ESD protection up to 8 kV  IEC 61000-4-2; level 4 (ESD)  Extremely low capacitance: Cd = 0.49 pF  AEC-Q101 qualified  Low clamping voltage: VCL = 18 V  Ultra low leakage current: IRM = 1 nA 1.3 Applications      Computers and peripherals Audio and video equipment Cellular handsets and accessories 10/100/1000 Mbit/s Ethernet USB, High-Definition Multimedia Interface (HDMI), FireWire     Portable electronics SIM card protection High-speed data lines Communication systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 5.5 V - 0.49 0.60 pF Per device VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V PESD5V0X1BCL Nexperia Extremely low capacitance bidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 cathode (diode 2) Simplified outline 1 Graphic symbol 1 2 2 sym045 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name PESD5V0X1BCL Description Version DFN1006-2 leadless ultra small plastic package; 2 terminals; SOD882 body 1.0  0.6  0.5 mm 4. Marking Table 4. Marking codes Type number Marking code PESD5V0X1BCL 11 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM rated peak pulse current tp = 8/20 s - 1.7 A Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C Per device [1] PESD5V0X1BCL Product data sheet [1] Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 March 2012 © Nexperia B.V. 2017. All rights reserved 2 of 12 PESD5V0X1BCL Nexperia Extremely low capacitance bidirectional ESD protection diode Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Max Unit electrostatic discharge voltage IEC 61000-4-2 (contact discharge) - 8 kV machine model - 400 V MIL-STD-883 (human body model) - 10 kV Per device VESD [1] [1] Device stressed with ten non-repetitive ESD pulses. Table 7. ESD standards compliance Standard Conditions Per device IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 8/20 s pulse waveform according to IEC 61000-4-5 PESD5V0X1BCL Product data sheet 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 March 2012 © Nexperia B.V. 2017. All rights reserved 3 of 12 PESD5V0X1BCL Nexperia Extremely low capacitance bidirectional ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per device VRWM reverse standoff voltage - - 5.5 V IRM reverse leakage current VRWM = 5.5 V -