ESD56151W04-2/TR

ESD56151WXX ESD56151WXX 1-Line, Bi-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD56151WXX is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56151WXX is specifically designed to protect power lines. SOD-323 The ESD56151WXX is available in SOD-323 package. Standard products are Pb-free and Halogen-free. Pin1 Features  Reverse stand-off voltage: 4.5V ~ 5V  Surge protection according to IEC61000-4-5 Circuit diagram see Table 4  Pin2 ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge)  Low clamping voltage  Solid-state silicon technology Applications X= Device code (O P)  Power supply protection * = Month code  Power management Marking (Top View) Order information Table 1. Device Package Shipping Marking ESD56151W04-2/TR SOD-323 3000/Tape&Reel TO* ESD56151W05-2/TR SOD-323 3000/Tape&Reel TP* Will Semiconductor Ltd. 1 Revision 1.0, 2017/04/18 ESD56151WXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp = 8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 2400 W VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VHOLD VCL VTRIG VRWM ITRIG IR IR ITRIG VRWM VTRIG VHOLD VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VHOLD Reverse holding voltage IHOLD IPP Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.0, 2017/04/18 ESD56151WXX o Electrical characteristics (TA = 25 C, unless otherwise noted) Table 3. Reverse Stand-off Type number Breakdown voltage Voltage VBR(V) IBR = 1mA VRWM (V) Junction Reverse leakage current IRM(μA) at VRWM capacitance F = 1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Typ. Max. ESD56151W04 4.5 4.7 5.3 6.4 - 0.1 280 350 ESD56151W05 5.0 5.3 6.3 7.1 - 0.1 400 450 Table 4. Type number Rated peak pulse current IPP (A) 1)3) Clamping voltage VCL(V) at IPP(A) 1)3) Clamping voltage VCL(V) at IPP = 16A, tp = 100ns 2)3) Clamping voltage VCL(V) at VESD = 8kV ESD56151W04 150 16 6.5 7.0 ESD56151W05 145 16 6.7 7.5 2)3) Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform) 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.0, 2017/04/18 ESD56151WXX o Electrical characteristics (TA = 25 C, unless otherwise noted) 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8μs 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 14 12 ESD56151W05 ESD56151W04 8 6 4 0 25 50 75 100 500 CJ - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp = 8/20s 10 125 f = 1MHz VAC = 50mV 400 300 ESD56151W05 200 ESD56151W04 100 0 150 0 1 IPP - Peak pulse current (A) 3 4 5 6 Capacitance vs. Reverse voltage 100 % of Rated power 10 Peak pulse power (kW) 2 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current 1 0.1 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 16 tr = 0.7~1ns t 60ns 30ns 30 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 4 Revision 1.0, 2017/04/18 ESD56151WXX PACKAGE OUTLINE DIMENSIONS SOD-323 D A2 A1 b E D1 A Side View L1 L c θ Top View Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.800 - 1.100 A1 0.800 0.850 0.900 A2 0.000 - 0.100 b 0.250 - 0.400 c 0.080 - 0.177 D1 1.600 1.700 1.800 D 2.300 - 2.800 E 1.150 - 1.400 L 0.475 Ref. L1 0.100 - 0.500 θ 0° - 8° Recommended land pattern (Unit: mm) 0.80 1.40 Notes: 0.80 This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 5 Revision 1.0, 2017/04/18 ESD56151WXX TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 6 Q4 Revision 1.0, 2017/04/18