ESDA6V1W5-5/TR

ESDA6V1W5 ESDA6V1W5 4-Lines, Uni-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESDA6V1W5 array is 4-line ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). These devices clamp the voltage just above the logic level supply for positive transient SOT-353 and to a diode drop below ground for negative transient. The ESDA6V1W5 may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 9A (8/20μs) 1 5 2 according to IEC61000-4-5. The ESDA6V1W5 is available in SOT-353 package. 3 4 Standard products are Pb-free and Halogen-free. Features Circuit diagram  Reverse stand-off voltage: 5V max.  Transient pr6otection for each line according to IEC61000-4-2 (ESD): I/O I/O 5 4 ±30kV (contact discharge) IEC61000-4-5 (surge): 9A (8/20μs)  Capacitance: CJ = 55pF typ.  Low leakage current  Low clamping voltage  Solid-state silicon technology *E Applications  Cell Phone Handsets and Accessories  Personal Digital Assistants  Notebooks, Desktops, and Servers  Portable Instrument 1 2 3 I/O GND I/O E * = Device code = Date code Marking & Pin configuration Order information Device Package Shipping ESDA6V1W5-5/TR SOT-353 3000/Tape&Reel Will Semiconductor Ltd. 1 Revision 3.3, 2016/03/28 ESDA6V1W5 Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 117 W Peak pulse current (tp = 8/20μs) IPP 9 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operation temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 3.3, 2016/03/28 ESDA6V1W5 o Electrical characteristics (TA = 25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit 5.0 V 1 μA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V Reverse breakdown voltage VBR IBR = 1mA 6.2 7.2 8.2 V Forward voltage VF IF = 10mA 0.4 0.8 1.25 V VCL IPP = 16A, tp = 100ns 11.0 V VCL VESD = +8kV 11.0 V 0.25 Ω 1) Clamping voltage Clamping voltage 2) Dynamic resistance Clamping voltage 1) 3) Junction capacitance RDYN VCL CJ IPP = 1A, tp = 8/20μs 9 V IPP = 9A, tp = 8/20μs 13 V 65 pF VR = 0V, f = 1MHz 55 Notes: 1) TLP parameter: Z0 = 50 Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 3.3, 2016/03/28 ESDA6V1W5 o 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Typical characteristics (TA = 25 C, unless otherwise noted) 50 T2 10 10 0 tr = 0.7~1ns Time (μs) T1 8/20μs waveform per IEC61000-4-5 t 60ns 30ns 20 T Time (ns) Contact discharge current waveform per IEC61000-4-2 10.5 Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp = 8/20μs 10.0 9.5 9.0 8.5 8.0 f = 1MHz VAC = 50mV 50 45 40 35 30 7.5 7.0 55 0 1 2 3 4 5 6 7 8 9 25 10 0 1 IPP - Peak pulse current (A) 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 10 80 60 40 20 0 1 10 100 Pulse time (μs) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 3.3, 2016/03/28 ESDA6V1W5 o Typical characteristics (TA = 25 C, unless otherwise noted) 10V/div TLP current (A) 10V/div 22 20 18 16 14 12 10 8 6 4 2 0 -2 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) Z0 = 50  tr = 2ns tp = 100ns 0 1 2 3 4 5 6 7 8 9 10 11 12 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 3.3, 2016/03/28 ESDA6V1W5 Package outline dimensions SOT-353 D e1 θ L1 E E1 L e C b A1 0.2 Recommend land pattern (Unit: mm) 0.40 Dimensions in Millimeters Min. Typ. Max. A 0.850 - 1.050 A1 0.000 - 0.100 A2 0.800 0.900 1.000 b 0.150 0.250 0.350 c 0.008 - 0.150 D 2.000 2.100 2.200 E 1.150 1.250 1.350 E1 2.150 2.300 2.450 A A2 Symbol 0.65 0.80 e e1 0.650 TYP 1.200 1.94 L 1.300 1.400 0.525 REF L1 0.260 0.360 0.460 θ 0° - 8° Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 1.30 Will Semiconductor Ltd. 6 Revision 3.3, 2016/03/28