ES3JB

山东晶导微电子有限公司 ES3AB THRU ES3JB Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current –3 A PINNING PIN DESCRIPTION FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 1 Cathode 2 Anode MECHANICAL DATA • Case : SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight : 0.055g / 0.002oz Top View Marking Code: ES3A~ES3J 2 1 Simplified outline SMB and symbol Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES3AB Maximum Repetitive Peak Reverse Voltage V RRM 50 100 Maximum RMS voltage V RMS 35 Maximum DC Blocking Voltage V DC 50 Maximum Average Forward Rectified Current at T c = 100 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 90 A Maximum Forward Voltage at 3 A VF Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range ES3DB ES3EB ES3GB ES3JB Units 150 200 300 400 600 V 70 105 140 210 280 420 V 100 150 200 300 400 600 V ES3BB ES3CB 1.25 1 1.68 V IR 5 100 μA Cj 45 pF t rr 35 ns RθJA RθJC 50 16 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2017.04 SMB-E-ES3AB~ES3JB-3A600V Page 1 of 3 山东晶导微电子有限公司 ES3AB THRU ES3JB Jingdao Microelectronics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 40 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) T J =25°C 1.0 ES3AB~ES3DB ES3EB/ES3GB ES3JB 0.01 T J =25°C 100 0.001 0.5 1.0 1.5 100 Fig.5 Typical Junction Capacitance 10 0 80 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 0.1 60 2.0 2.5 Instaneous Forward Voltage (V) 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 150 140 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2017.04 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 ES3AB THRU ES3JB Jingdao Microelectronics PACKAGE OUTLINE SMB Plastic surface mounted package; 2 leads L A A1 C A b D E E1 VM A SMB mechanical data UNIT mm mil A1 L C b 5.59 0.20 1.5 0.305 2.2 3.3 5.08 0.05 0.8 0.152 1.9 155 220 7.9 59 12 87 200 2.0 32 6 75 A E D max 2.44 4.70 3.94 min 2.13 4.06 max 96 185 min 84 130 160 E1 The recommended mounting pad size Marking Type number 2.2 (86) 2.4 (94) ES3AB 2.8 (110) 2.4 (94) mm Unit ： (mil) 2017.04 JD704228B4 Marking code ES3A ES3BB ES3B ES3CB ES3C ES3DB ES3D ES3EB ES3E ES3GB ES3G ES3JB ES3J Page 3 of 3