ES2DB

山东晶导微电子有限公司 ES2AB THRU ES2JB Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current –2 A PINNING PIN DESCRIPTION FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 1 Cathode 2 Anode MECHANICAL DATA • Case : SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight : 0.055g / 0.002oz Top View Marking Code: ES2A~ES2J 2 1 Simplified outline SMB and symbol Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES2AB Maximum Repetitive Peak Reverse Voltage V RRM 50 100 Maximum RMS voltage V RMS 35 Maximum DC Blocking Voltage V DC 50 Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 2 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 60 A Maximum Forward Voltage at 2 A VF Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range ES2DB ES2EB ES2GB ES2JB Units 150 200 300 400 600 V 70 105 140 210 280 420 V 100 150 200 300 400 600 V ES2BB ES2CB 1.25 1 1.68 V IR 5 100 μA Cj 40 pF t rr 35 ns RθJA RθJC 60 20 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2017.01 SMB-E-ES2AB~ES2JB-2A600V Page 1 of 3 山东晶导微电子有限公司 ES2AB THRU ES2JB Jingdao Microelectronics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 40 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) T J =25°C 1.0 ES2AB~ES2DB ES2EB/ES2GB ES2JB 0.01 T J =25°C 100 0.001 0.5 1.0 1.5 100 Fig.5 Typical Junction Capacitance 10 0 80 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 0.1 60 2.0 2.5 Instaneous Forward Voltage (V) 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 80 70 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2017.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 ES2AB THRU ES2JB Jingdao Microelectronics PACKAGE OUTLINE SMB Plastic surface mounted package; 2 leads L A A1 C A b D E E1 VM A SMB mechanical data UNIT mm mil A1 L C b 5.59 0.20 1.5 0.305 2.2 3.3 5.08 0.05 0.8 0.152 1.9 155 220 7.9 59 12 87 200 2.0 32 6 75 A E D max 2.44 4.70 3.94 min 2.13 4.06 max 96 185 min 84 130 160 E1 The recommended mounting pad size Marking Type number 2.2 (86) 2.4 (94) ES2AB 2.8 (110) 2.4 (94) mm Unit ： (mil) 2017.01 JD702226B0 Marking code ES2A ES2BB ES2B ES2CB ES2C ES2DB ES2D ES2EB ES2E ES2GB ES2G ES2JB ES2J Page 3 of 3