S3MBF

山东晶导微电子有限公司 S3ABF THRU S3MBF Jingdao Microelectronics Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 3 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz 2 Top View Marking Code： S3AB-S3MB Simplified outline SMBF and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S3ABF S3BBF S3DBF S3GBF S3JBF S3KBF S3MBF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 115 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 80 A Maximum Instantaneous Forward Voltage at 3 A VF 1.1 V IR 5 150 μA Cj 35 pF RθJA RθJC 45 15 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMAF-A-S3ABF~S3MBF-3A1KV Page 1 of 3 山东晶导微电子有限公司 S3ABF THRU S3MBF Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 3.0 2.0 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Case Temperature (°C) 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 10 Junction Capacitance ( pF) Instaneous Forward Current (A) 20 percent of Rated Peak Reverse Voltage (%) 1.0 T J =25°C 100 10 T J =25°C 0.1 0.4 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 S3ABF THRU S3MBF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm ∠ 9° Type number Marking code S3ABF S3AB S3BBF S3BB S3DBF S3DB S3GBF S3GB S3JBF S3JB S3KBF S3KB S3MBF S3MB 1.8(71) 2.54(100) 3.0(118) 40 Marking Unit：mm(mil) 2016.01 g 1.0 The recommended mounting pad size 1.8(71) g pad e E A pad HE JD601118B0 Page 3 of 3