BZT52C3V3S

BZT52C2V0S-BZT52C39S 0.2W Zener Diode SOD-323 Features — Planar Die Construction — Ultra-Small Surface Mount Package — Ideally suited for Automated Assembly Processes Mechanical Data — — — — Case: SOD-323, Plastic Case material - UL Flammability Rating Classification 94V-0 Polarity: Cathode Band Weight: 0.004 grams (approx.) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Maximum Ratings Characteristic Forward Voltage (Note1) Symbol @ IF = 10mA Power Dissipation 1 Value Unit VF 0.9 V Pd 200 mW Thermal Resistance, Junction to Ambient Air RqJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Short duration test pulse used in minimize self-heating effect. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com BZT52C2V0S-BZT52C39S 0.2W Zener Diode Electrical Characteristics Type Number Zener Voltage Range (Note 2) Marking Code VZ @ IZT Maximum Zener Impedance (Note 3) IZT ZZT @ IZT ZZK @ IZK W IZK Maximum Reverse Current (Note 2) IR VR Temperature Coefficient of Zener Voltage @ IZT = 5mA mV/°C Nom (V) Min (V) Max (V) (mA) BZT52C2V0S WY 2.0 1.91 2.09 5 BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 Notes: 600 mA uA V Min Max 1.0 150 1.0 -3.5 0 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. ht t p : // Revision:20170701-P1 100 www.lgesemi .c o m mail:lge@lgesemi.com BZT52C2V0S-BZT52C39S 0.2W Zener Diode 300 50 Tj = 25°C C2V7 C3V9 PD, POWER DISSIPATION (mW) C3V3 C5V6 C4V7 C6V8 IZ, ZENER CURRENT (mA) 40 200 100 C8V2 30 20 Test Current IZ 5.0mA 10 0 100 0 0 200 0 TA, AMBIENT TEMPERATURE, °C Fig. 1. Power Derating Curve 30 Tj = 25°C 1 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10 1000 C10 Tj = 25 °C C15 20 C18 C22 10 Test current IZ 5mA C27 C33 C39 C36 CT, TOTAL CAPACITANCE (pF) IZ, ZENER CURRENT (mA) C12 VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 10 1 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3. Zener Breakdown Characteristics VZ, NOMINAL ZENER VOLTAGE (V) Fig. 4 Total Capacitance vs Nominal Zener Voltage PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SOD-323 3000/REEL 180000 44X44X22 9.00 8.00 ht t p : // Revision:20170701-P1 40 100 www.lgesemi .c o m mail:lge@lgesemi.com