N-Channel Enhancement Mode MOSFET
SOT-23
Feature
·60V/0.2A, RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A
RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A
·Super High dense cell design for extremely low RDS(ON) .
·Reliable and Rugged.
·Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications.
·SOT-23 for Surface Mount Package.
1:Gate 2:Source 3:Drain
Applications
·Power Management in DC/DC Converters
Portable and Battery-powered Products.
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Typical Characteristics
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Typical Characteristics
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Soldering Footprint
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