ESD5651N-2/TR

ESD5651N ESD5651N 4.5V, Single Li-ion Battery Port Surge Protector http//:www.sh-willsemi.com Descriptions The ESD5651N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. DFN1006-2L (Bottom View) The ESD5651N may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 35A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD5651N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±4. 5V Max.  Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) Pin1 IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 35A (8/20μs)  Capacitance: CJ = 65pF typ.  Low leakage current  Low clamping voltage: VCL = 6.5V typ. @ IPP = 16A (TLP)  Solid-state silicon technology Power lines  Cellular handsets  Tablets  Microprocessors  Portable Electronics Will Semiconductor Ltd. Pin2 3 = Device code * = Month code ( A~Z) Marking (Top View) Applications  * 3 Order information Device Package Shipping ESD5651N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.5, 2018/4/23 ESD5651N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 525 W Peak pulse current (tp = 8/20μs) IPP 35 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VHOLD VCL VTRIG VRWM ITRIG IR IR ITRIG VRWM VTRIG VHOLD VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VHOLD Reverse holding voltage IHOLD IPP Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2018/4/23 ESD5651N o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit ±4.5 V 1 μA Reverse stand-off voltage VRWM Reverse leakage current IR Reverse trigger voltage VTRIG ITRIG = 2μA 4.7 V Reverse holding voltage VHOLD IHOLD = 50mA 4.6 V VRWM = 4.5V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 6.5 V Clamping voltage 2) VCL VESD = 8kV 6.5 V Clamping voltage 3) Dynamic resistance VCL 1) Junction capacitance IPP = 1A, tp = 8/20μs 6 V IPP = 20A, tp = 8/20μs 11 V IPP = 35A, tp = 8/20μs 15 V RDYN Ω 0.12 VR = 0V, f = 1MHz 65 80 pF VR = 4.5V, f = 1MHz 45 60 pF CJ Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.5, 2018/4/23 ESD5651N o 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 50 T2 10 10 0 0 20 T T1 tr = 0.7~1ns CJ - Junction capacitance (pF) VC - Clamping voltage (V) 70 Pulse waveform: tp = 8/20s Pin2 to Pin1 Pin1 to Pin2 0 5 10 15 20 25 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 15 14 13 12 11 10 9 8 7 6 5 4 t 60ns 30ns Time (s) 30 35 f = 1MHz VAC = 50mV 65 60 55 50 45 40 -5 40 -4 -3 IPP - Peak pulse current (A) -2 -1 0 1 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 100 % of Rated power Peak pulse power (W) 1000 100 10 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 4 Revision 1.5, 2018/4/23 ESD5651N o Typical characteristics (TA=25 C, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 16 TLP current (A) 12 8 4 0 -4 -8 Z0 = 50 -12 tr = 2ns -16 tp = 100ns -20 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.5, 2018/4/23 ESD5651N PACKAGE OUTLINE DIMENSIONS DFN1006-2L    b L E (Ⅰ) (Ⅱ) (Ⅲ) D e Top View Bottom View (Ⅰ) A3 A1 A (Ⅱ) Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.34 0.45 0.53 A1 0.00 0.02 0.05 A3 0.12 Ref. D 0.95 1.00 1.08 E 0.55 0.60 0.68 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e 0.65 BSC Recommended land pattern (Unit: mm) 0.55 0.60 0.30 Notes: 0.85 This recommended land pattern is for reference purposes only. Please consult your manufacturing 1.40 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 6 Revision 1.5, 2018/4/23 ESD5651N TAPE AND REEL INFORMATION RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 7 Q4 Revision 1.5, 2018/4/23