AO3400A

MOSFET AO3400A N-Channel Enhancement-Mode MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Symbol Max Unit BVDSS VGS 30 +12 V V Drain Current (continuous) ID 5.8 A Drain Current (pulsed) IDM 30 A Total Device Dissipation TA=25℃ PD 1400 mW 150 ℃ Characteristic Drain-Source Voltage Gate- Source Voltage Junction TJ Storage Temperature Tstg ℃ -55to+150 Electrical Characteristics Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) BVDSS 30 — — V Gate Threshold Voltage (ID = 250uA,VGS= VDS) VGS(th) 0.7 1.1 1.4 V VSD — 0.77 1 V IDSS — — 1 uA IGSS — — +100 nA RDS(ON) — 29 32 mΩ RDS(ON) — 32 36 mΩ RDS(ON) — 40 52 mΩ CISS — 823 — pF COSS — 99 — pF t(on) — 3.3 — ns t(off) — 26.3 — ns Diode Forward Voltage Drop (IS= 1 A,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= 24V ) Gate Body Leakage (VGS=+12V, VDS=0V) Static Drain-Source On-State Resistance (ID= 5.8A,VGS= 10V ) Static Drain-Source On-State Resistance (ID= 5 A,VGS= 4.5 V) Static Drain-Source On-State Resistance (ID= 4 A,VGS= 2.5 V) Input Capacitance (VGS=0V, VDS= 15 V,f=1MHz) Output Capacitance (VGS=0V, VDS= 15 V,f=1MHz) Turn-ON Time (VDS= 15 V, VGS= 10 V, RGEN=3Ω) Turn-OFF Time (VDS= 15 V, VGS= 10 V, RGEN=3Ω) Rev 8: Nov 2014 www.born-tw.com Page 1 of 3 MOSFET Rev 8: Nov 2014 N-Channel Enhancement-Mode MOSFET www.born-tw.com AO3400A ROHS Page 2 of 3 MOSFET N-Channel Enhancement-Mode MOSFET AO3400A ROHS SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2014 www.born-tw.com Page 3 of 3