BM2300

BM2300 MOSFET N-Channel MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 3.6 IDM 8 Continuous Drain Current Pulsed Drain Current 1) TA = 25oC Maximum Power Dissipation o TA = 75 C Junction-to-Ambient Thermal Resistance (PCB mounted) 2) V A 1.25 PD W 0.8 TJ, Tstg Operating Junction and Storage Temperature Range Unit o -55 to 150 o 78 RθJA C C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. Electrical Characteristics ( Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Static Test Condition Symbol Min. Typ. Miax. Unit 3) Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 3.1A 70.0 80.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 3.6A 60.0 70.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current 0 IDSS VDS = 20V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V gfs VDS = 5V, ID = 4..2A Forward Transconductance 20 0.6 V 0.76 mΩ V 1 uA ±100 nA S 5 4) Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDS = 10V, ID = 3.6A VGS = 4.5V tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nC 0.65 . 1.5 12 VDD = 10V, RG = 6Ω 36 ID = 1A, 34 VGS = 4.5V RL = 5.5 Ω Turn-Off Fall Time 5.4 VDS = 10V, VGS = 0V f = 1.0 MHz ns 10 340 pF 115 33 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.0A, VGS = 0V 1.6 A 1.0 V Notes 3) Short duration test pulse used to minimize self-heating effect. 4) Pulse test pulse width