SI2328

MOSFET SI2328 N-Channel Enhancement-Mode MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Symbol Max Unit BVDSS VGS 100 +20 V V Drain Current (continuous) ID 1.5 A Drain Current (pulsed) IDM 6 A Total Device Dissipation TA=25℃ PD 1250 mW Characteristic Drain-Source Voltage Gate- Source Voltage Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Electrical Characteristics Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) BVDSS 100 — — V Gate Threshold Voltage (ID = -250uA,VGS= VDS) VGS(th) 1 — 3 V Diode Forward Voltage Drop (IS= 1 A,VGS=0V) VSD — — 1.2 V Zero Gate Voltage Drain Current (VGS=0V, VDS= 30V) IDSS — — 1 uA Gate Body Leakage (VGS=+20V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance (ID= 1.5A,VGS= 10 V) Static Drain-Source On-State Resistance (ID= 1 A,VGS= 4.5 V) Input Capacitance (VGS=10V, VDS= 15 V,f=1MHz) RDS(ON) — 230 270 mΩ RDS(ON) — 275 340 mΩ CISS — 326 — pF Output Capacitance (VGS= 10V, VDS= 15 V,f=1MHz) COSS — 38 — pF t(on) — 10 — ns t(off) — 30 — ns Turn-ON Time (VDS= 50 V, ID= 10 A, RGEN=6Ω) Turn-OFF Time (VDS= 50 V, ID= 10 A, RGEN=6Ω) Rev 8: Nov 2014 www.born-tw.com Page 1 of 2 MOSFET SI2328 P-Channel Enhancement-Mode MOSFET ROHS SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2014 www.born-tw.com Page 2 of 2