A1015

A1015 PNP Silicon Epitaxial Planar Transistor SOT-23 FEATURES z High voltage and high current Excellent hFE Linearity z Complementary to C1815 z 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Parameter Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ mA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO -100u A,IE 0 IC= = -50 V Collector-emitter breakdown voltage V(BR)CEO IC= = -0.1mA, IB 0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= = -100 u A, IC 0 -5 V Collector cut-off current ICBO = VCB= -50V ,IE 0 Collector cut-off current ICEO V= CE= -50V , IB 0 Emitter cut-off current IEBO DC current gain hFE = VEB= - 5V, I C 0 VCE= -6V,IC= -2mA -0.1 ȝA -1 ȝA -0.1 ȝA 400 130 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V fT Transition frequency VCE= -10V,IC= -1mA f=30MHz 80 MHz CLASSIFICATION OF hFE Rank Range www.slkormicro.com L H 130-200 200- 400 A1015 IC -3.6 VCE —— -10uA -3.2 -7uA -6uA -5uA -1.6 -4uA -1.2 -3uA -0.8 Ta=25℃ 100 -2uA IB=-1uA -0.4 COMMON EMITTER VCE= -6V -0.0 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 -0.1 -12 -1 -10 -100 -200 COLLECTOR CURRENT VCE (V) IC VBEsat —— -1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) IC hFE -8uA -2.0 —— Ta=100℃ DC CURRENT GAIN (mA) -2.4 COLLECTOR CURRENT IC -9uA -2.8 hFE 1000 COMMON EMITTER Ta=25℃ -100 Ta=100 ℃ Ta=25℃ IC (mA) IC -900 Ta=25℃ Ta=100 ℃ -600 β=10 β=10 -10 -0.3 -1 -10 -100 IC COLLECTOR CURREMT IC —— -1 (mA) -10 -100 COLLECTOR CURREMT VBE -200 fT 1000 —— (mA) -200 IC fT (mA) TRANSITION FREQUENCY IC Ta= 2 Ta= 1 5℃ 00 ℃ -10 -1 100 COMMON EMITTER VCE=-10V COMMON EMITTER VCE= -6V -0.1 -300 -900 -600 Ta=25℃ 10 -0.1 -1200 -1 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib —— COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C Cib Cob 1 -0.1 -1 REVERSE VOLTAGE www.slkormicro.com —— IC (mA) Ta f=1MHz IE=0/IC=0 Ta=25 ℃ 10 PC 250 -100 -10 COLLECTOR CURRENT VCB/VEB 30 (pF) IC (MHz) -100 COLLECTOR CURRENT -300 -200 -10 V R (V) -20 200 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE T a (℃ ) 125 150 A1015 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°