SI2302S

SI2302S SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Enhancement Mode MOSFET SOT-23 VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 2.3A＜4 8m Ω RDS(ON), Vgs@ 3.3V, Ids@ 2.3A＜5 5m Ω 3 1. GATE 2. SOURCE 1 3. DRAIN Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 2 Equivalent circuit MARKING D A2sHB G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 7' Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 TA=25℃ Continuous Drain Current Maximum Power Dissipation 2) Pulsed Drain Current 1) Operating Junction and Storage Temperature Range Thermal Resistance Junction-Ambient TA=70℃ TA=25℃ TA=70℃ V 2.3 ID A 1.8 1.0 PD W 0.8 A 9 IDM TJ, Tstg Unit o -55 to 150 RθJA 125 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T19C30A0 http://www.microdiode.com Rev:2019A0 Page :1 SI2302S MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage BVDSS 1) RDS(on) VGS(th) VGS = 0V, ID = 250uA VGS = 4.5V, ID = 2.0A 48 60 VGS = 2.5V, ID = 1.0A 66 80 0.6 1.0 V 1 uA 100 nA VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Gate Body Leakage IGSS VGS =12V, VDS = 0V gfs VDS = 5V, I D = 2.3A Forward Transconductance 1) V 20 0.4 10 mΩ S Dynamic Total Gate Charge Qg 5.4 VDS = 10V, I D = 2.3A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time 1.6 12 VDD = 10V, RL=5.5 Ω 36 tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss ID ^ 2.3A,V GEN = 4.5V RG = 6 Ω 160 Coss f = 1.0 MHz Reverse Transfer Capacitance Crss Source drain current(Body Diode) ISD Diode Forward Voltage VSD 1) ns 34 10 VDS = 10V, VGS = 0V Output Capacitance nC 0.65 VGS = 4.5V IS = 1.0A, V 30 pF 25 GS = 0V 0.8 1.5 A 1.2 V Pulse test: pulse width