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SD103AWT

SD103AWT

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SOD523(SC-79)

  • 描述:

    开关二极管(小信号) VR=40V IF=350mA VF=0.6V IR=1000uA

  • 数据手册
  • 价格&库存
SD103AWT 数据手册
SD103AWT Reverse Voltage 40 Volts Forward Current - 350mAmpere Schottky Barrier Diode Features SOD-523  Low Forwa rd Voltage  High Current Capability 0.033(0.85) 0.030(0.75) 0.015 (0.4) 0.012 (0.30) 0.049(1.25) 0.045(1.15) Mechanical Data 0.027(0.70) 0.023(0.60)  Case : JEDEC SOD-523 molded plastic body  Mounting Position : Any  Marking;SD103AWT:S4 0.005(0.135) 0.003(0.100) 0.035(0.90) 0.028(0.70) 0.067(1.70) 0.059(1.50) Dimensions in inches and (millimeters) MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbols SD103AWT Units Maximum Repetitive Peak Reverse Voltage V RRM 40 V Maximum RMS voltage V RMS 28 V Maximum DC blocking voltage VDC 40 V Maximum average forward rectified current IFM 350 mA Peak forward surge current 8.3 ms single half sine-wave I FSM 2 A Power Dissipation P tot 150 mW Typical Thermal Resistance RθJA 667 °C/W Tj 125 °C Tstg -50 ~ +150 °C Parameter Operating junction temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse BreakdownVoltage Maximum Forward Voltage Peak Reverse Current Symbols Test conditions Min V (BR)R IR=100μA 40 VF IF=1m A IF=5m A IF=20m A IF=200m A IR Typical Junction Capacitance Cj Reverse Recovery Time t rr http://www.microdiode.com Typ Max V 0.27 0.32 0.37 5 VR=20V 2 VR=10V 1 IF=IR=200mA, Irr=0.1xIR,RL=100Ω V 0.60 VR=30V VR=0V,f = 1MHz Units uA 50 pF 10 ns Rev:2024A2 Page :1 SD103AWT Reverse Voltage 40 Volts Forward Current - 350mAmpere Typical Characterisitics The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2
SD103AWT 价格&库存

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SD103AWT
  •  国内价格
  • 1+0.05092
  • 100+0.04753
  • 300+0.04413
  • 500+0.04074
  • 2000+0.03903
  • 5000+0.03802

库存:5335

SD103AWT
    •  国内价格
    • 50+0.08338
    • 500+0.06588
    • 3000+0.05519
    • 6000+0.04936
    • 24000+0.04439
    • 51000+0.04158

    库存:2247