AO3415

AO3415 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET V(BR)DSS 37mΩ@ -4.5V -20V 3 ID Max RDS(on)Typ -4.8A 43mΩ@ -3.3V 1. GATE 2. SOURCE 1 3. DRAIN FEATURE z Excellent RDS(ON), low gate charge,low gate voltages MARKING 2 APPLICATION z Load switch and in PWM applicatopns Equivalent circuit D 3415 G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage V(BR)DSS -20 Gate-Source Voltage VGS ±8 TA = 25 oC Continuous Drain Current o TA = 70 C Maximum Power Dissipation o TA = 25 C 2) o TA = 70 C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) V -4.8 ID A -3.6 IDM Pulsed Drain Current 1) Unit A -30 1.5 PD W 1.0 TJ, Tstg -50 to 150 RthJA 80 o C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T21625A1 http://www.microdiode.com Rev:2021A1 Page :1 AO3415 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.7 -1.2 Units Static Parameters Drain-source breakdown voltage Gate threshold voltage V(BR) DSS VGS = 0V, ID =-250µA -20 VGS(th) VDS =VGS, ID =-250µA -0.4 Zero gate voltage drain current IDSS Gate-body leakage current IGSS Drain-source on-state resistance(note1) Forward transconductance(note2) RDS(on) gFS VDS =20V, VGS =0V (TA=25℃) -1 VDS =16V, VGS =0V (TA=125℃) -100 µA ±10 VDS =0V, VGS =±8V VGS =-4.5V, ID = -4A 37 45 VGS =-3.3V, ID = -3A 43 55 VGS =-2.5V, ID =-2A 52 65 VDS =-5V, ID =-4A V 8 mΩ S Dynamic Parameters (note3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 675 VDS =-10V,VGS =0V,f =1MHz pF 120 85 VDS =0V,VGS =0V,f =1MHz 6.5 Ω Switching Parameters 14.2 Total gate charge Qg Gate-Source charge Qgs Gate-drain charge Qgd 5.8 Turn-on delay time (note3) td(on) 15 Turn-on rise time(note3) Turn-off delay time(note3) Turn-off fall time(note3) VDS =-10V,VGS =-4.5V,ID =-4A nC 3.2 tr VDS=-10V, VGS=-4.5V 11 td(off) RGEN =3Ω, RL=2.5Ω, 22 tf ns 35 Drain-source body diode characteristics Continuous source-drain diode current Body diode voltage (note 2) IS VSD TC=25℃ IS=-2A,VGS =0V -0.83 -2.0 A -1.2 V Notes: 1) 2) 3) PRepetitive rating,pulse width limited by junction temperature. Pulse test: pulse width ≤ 300us, duty cycle≤ 2%. These parameters have no way to verify. http://www.microdiode.com Rev:2021A1 Page :2 AO3415 -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature -VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) -ID, Drain-Source Current (A) -VDS, Drain -Source Voltage (V) -VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage -ISD, Reverse Drain Current (A) -ID - Drain Current (A) -VGS, Gate -Source Voltage (V) -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com -VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2021A1 Page :3 AO3415 C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics -VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2021A1 Page :4 AO3415 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 http://www.microdiode.com inches mm Rev:2021A1 Page :5