BC327-40

BC327/328(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features
Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage BC327 BC328 BC327 BC328 Units VEBO Emitter-Base Voltage -50 -30 -45 -25 -5 IC Collector Current -Continuous -800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ V V V Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage BC327 BC328 Collector-emitter breakdown voltage BC327 BC328 Test conditions MIN TYP MAX UNIT IC= -100uA, IE=0 VCBO IC= -10mA , V -45 -25 V -5 V IB=0 VCEO Emitter-base breakdown voltage -50 -30 VEBO IE= -10uA, IC=0 BC327 BC328 ICBO VCB= -45 V , IE=0 VCB= -25V , IE=0 -0.1 -0.1 uA BC327 BC328 ICEO VCE= -40 V , IB=0 VCE= -20 V , IB=0 -0.2 -0.2 uA IEBO VEB= -4 V , -0.1 uA hFE(1) VCE=-1 V, IC= -100mA 100 hFE(2) VCE=-1 V, IC= -300mA 40 Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IC=0 630 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB=-50mA -1.2 V VCE=-1 V, IC= -300mA -1.2 V Base-emitter voltage VBE fT Transition frequency Collector Output Capacitance Cob VCE= -5V, IC= -10mA f = 100MHz VCB=-10V,IE=0 f=1MHZ 260 MHz 12 pF CLASSIFICATION OF hFE Rank Range Revision:20170701-P1 16 25 40 100-250 160-400 250-630 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BC327/328(PNP) TO-92 Bipolar Transistors Typical Characteristics Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BC327/328(PNP) TO-92 Bipolar Transistors Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com