S3MBF

S3ABF THRU S3MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Features SMBF  For surface mounted applications  Low profile package 0.146(3.70) 0.138(3.50) 0.086 (2.20) 0.075 (1.90)  Glass Passivated Chip Junction  Easy to pick and place  Lead free in comply with EU RoHS 2011/65/EU diretives 0.173(4.40) 0.165(4.20) 0.051(1.30) 0.043(1.10) Mechanical Data 0.010(0.26) 0.007(0.18) 0.048(1.20) 0.031(0.80) 0.216(5.50) 0.200(5.10) Case: JEDEC 60B) molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.002 ounce, 0.057 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=115℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A VRRM VRMS VDC S3DBF S3GBF S3JBF S3KBF S3MBF S3ABF S3BBF MDD S3AB MDD S3BB MDD S3DB MDD S3GB MDD S3JB MDD S3KB MDD S3MB 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS V V V I(AV) 3 A IFSM 80 A VF 1.1 V μA Typical junction capacitance (NOTE 1) CJ 5 150 35 Typical thermal resistance (NOTE 2) RJA RθJC 45 15 ℃/W -55 to +150 ℃ Maximum DC reverse current at rated DC blocking voltage TA=25℃ TA=125℃ IR Operating junction and storage temperature range TJ,TSTG pF Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas http://www.microdiode.com Rev:2024A2 Page :1 S3ABF THRU S3MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics 3.0 2.0 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Case Temperature (°C) 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 10 Junction Capacitance (pF) Instaneous Forward Current (A) 20 1.0 T J =25°C 100 10 T J =25°C 0.1 0.4 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surge Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surge Current 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 S3ABF THRU S3MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.61 1.60 1 50 . 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 12.30 E F B A W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMBF 13" 5,000 4.0 10,000 190*190*41 330 CARTON SIZE (mm) 365*365*360 CARTON (pcs) 80,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 2.54 0.100 B 1.8 0.071 C 4.8 0.189 D 3.0 0.118 E 6.6 0.260 Unit (inch) Rev:2024A2 Page :3